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    AZD014 GROUNDING EFFECTS IN THE POWER SUPPLY OF CAPACITIVE SENSORS Search Results

    AZD014 GROUNDING EFFECTS IN THE POWER SUPPLY OF CAPACITIVE SENSORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    AZD014 GROUNDING EFFECTS IN THE POWER SUPPLY OF CAPACITIVE SENSORS Datasheets Context Search

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    AZD014

    Abstract: azd014 grounding effects in the power supply of capacitive sensors
    Text: IQ Switch ProxSense Application Note: AZD014 Grounding effects in the power supply of capacitive sensors & methods for improving sensitivity A capacitive sensor relies on a closed loop to perform sensing very much like electrical current requires a closed loop to flow . Having a battery supplied portable unit vs. a well grounded unit,


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