Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    AYW MARKING CODE IC Search Results

    AYW MARKING CODE IC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    AYW MARKING CODE IC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AYW marking code IC

    Abstract: No abstract text available
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSOP-5 CASE 483-02 ISSUE H 5 DATE 18 MAY 2007 1 SCALE 2:1 NOTE 5 2X 0.10 T 2X 0.20 T NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES


    Original     		PDF

    TRANSISTOR AH-16

    Abstract: AH-16 transistor TRANSISTOR AH-10 AH-16 npn AH MARKING SOT223 ah-16 sot 223 marking code AH BCP53-16T1G BCP53-10T1G Transistor AH10
    Text: BCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. •ăHigh Current: 1.5 Amps


    Original     		PDF BCP53 OT223 BCP56 BCP53T1 BCP53-10T1 AH-10 BCP53-16T1 AH-16 TRANSISTOR AH-16 AH-16 transistor TRANSISTOR AH-10 AH-16 npn AH MARKING SOT223 ah-16 sot 223 marking code AH BCP53-16T1G BCP53-10T1G Transistor AH10

    Untitled

    Abstract: No abstract text available
    Text: NCP785 Product Preview Wide Input Voltage Range 5 mA Ultra-Low Iq, High PSRR Linear Regulator http://onsemi.com The NCP785 is a high−performance linear regulator, offering a very wide operating input voltage range of up to 450 V DC, with an output current of up to 5 mA.


    Original     		PDF NCP785 NCP785 NCP785/D

    BCP68

    Abstract: BCP69T1 BCP69T1G
    Text: BCP69T1 PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. Features


    Original     		PDF BCP69T1 OT-223 BCP68 BCP68 BCP69T1 BCP69T1G

    AYW marking code IC

    Abstract: 306 marking code transistor MARKING KV SOT-223 BSP16T1 BSP19AT1 BSP19AT1G
    Text: BSP19AT1 Preferred Device NPN Silicon Expitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT-223 package which is designed for


    Original     		PDF BSP19AT1 OT223 AYW marking code IC 306 marking code transistor MARKING KV SOT-223 BSP16T1 BSP19AT1 BSP19AT1G

    TRANSISTOR bH-16

    Abstract: TRANSISTOR bH-10 bh16 transistor marking BH SOT-223 BH 16 transistor BH-16 ON bh-16 marking BH-10 BH-16 SOT BH-16 transistor
    Text: BCP56T1 Series Preferred Devices NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications.


    Original     		PDF BCP56T1 OT-223 OT-223 inch/1000 BCP56T3 inch/4000 BCP53T1 MOUN50 TRANSISTOR bH-16 TRANSISTOR bH-10 bh16 transistor marking BH SOT-223 BH 16 transistor BH-16 ON bh-16 marking BH-10 BH-16 SOT BH-16 transistor

    4030p

    Abstract: No abstract text available
    Text: NJT4030P Preferred Device Product Preview Bipolar Power Transistors PNP Silicon http://onsemi.com Features • Collector −Emitter Sustaining Voltage − VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc POWER BJT IC = 3.0 AMPERES BVCEO = 40 VOLTS • High DC Current Gain −


    Original     		PDF NJT4030P OT-223 4030P 4030PG NJT4030P/D

    BSP52T1

    Abstract: BSP52T1G BSP52T3 BSP52T3G BSP62T1 306 marking code transistor
    Text: BSP52T1, BSP52T3 Preferred Devices NPN Small−Signal Darlington Transistor This NPN small signal Darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the SOT-223 package, which is


    Original     		PDF BSP52T1, BSP52T3 OT-223 BSP52T1 inch/1000 BSP62T1 BSP52T1G BSP52T3 BSP52T3G BSP62T1 306 marking code transistor

    transistor P2F

    Abstract: ON MARKING P2F sot223 p2f PZT2907AT1G SOT-223 P2f p2F 45 PZT2222AT1 PZT2907AT3 PZT2907AT1 PZT2907AT3G
    Text: PZT2907AT1 Preferred Device PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.


    Original     		PDF PZT2907AT1 OT-223 PZT2222AT1 OT-223 transistor P2F ON MARKING P2F sot223 p2f PZT2907AT1G SOT-223 P2f p2F 45 PZT2222AT1 PZT2907AT3 PZT2907AT1 PZT2907AT3G

    BCP68T1

    Abstract: BCP68T1G BCP68T3 BCP68T3G BCP69T1
    Text: BCP68T1 Preferred Device NPN Silicon Epitaxial Transistor This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications.


    Original     		PDF BCP68T1 OT-223 BCP69T1 BCP68T1 BCP68T1G BCP68T3 BCP68T3G BCP69T1

    brd8011

    Abstract: BSP16T1G
    Text: BSP16T1G High Voltage Transistors PNP Silicon Features • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -300 Vdc Collector-Base Voltage VCBO


    Original     		PDF BSP16T1G BSP16T1/D brd8011 BSP16T1G

    4030p

    Abstract: NJT4030p NJT4030PT1G NJT4030PT3G
    Text: NJT4030P Bipolar Power Transistors PNP Silicon Features • Collector -Emitter Sustaining Voltage -      VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc High DC Current Gain -= 200 (Min) @ IC = 1.0 Adc hFE = 100 (Min) @ IC = 3.0 Adc Low Collector -Emitter Saturation Voltage -VCE(sat) = 0.200 Vdc (Max) @ IC = 1.0 Adc


    Original     		PDF NJT4030P OT-223 OT-223 4030PG NJT4030P/D 4030p NJT4030p NJT4030PT1G NJT4030PT3G

    NSB9435T1G

    Abstract: 9435R
    Text: NSB9435T1G High Current Bias Resistor Transistor PNP Silicon Features http://onsemi.com • Collector −Emitter Sustaining Voltage − • • • • • VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc High DC Current Gain − = 125 (Min) @ IC = 0.8 Adc hFE = 90 (Min) @ IC = 3.0 Adc


    Original     		PDF NSB9435T1G OT-223 NSB9435T1/D NSB9435T1G 9435R

    BSP16T1

    Abstract: BSP16T1G
    Text: BSP16T1 Preferred Device High Voltage Transistors PNP Silicon Features •ăPb-Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -300 Vdc Collector‐Base Voltage VCBO -350 Vdc Emitter‐Base Voltage


    Original     		PDF BSP16T1 BSP16T1/D BSP16T1 BSP16T1G

    TRANSISTOR AH-16

    Abstract: BCP53 AH MARKING SOT223 ah-16 TRANSISTOR BCP53 BCP53T1G AH-16 npn BCP53-10T1 BCP53-10T1G BCP53-16T1
    Text: BCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. •ăHigh Current: 1.5 Amps


    Original     		PDF BCP53 OT223 BCP56 BCP53T1 BCP53-10T1 AH-10 BCP53-16T1 AH-16 TRANSISTOR AH-16 AH MARKING SOT223 ah-16 TRANSISTOR BCP53 BCP53T1G AH-16 npn BCP53-10T1 BCP53-10T1G BCP53-16T1

    MC74VHC1GT50DTT

    Abstract: No abstract text available
    Text: MC74VHC1GT50 Noninverting Buffer / CMOS Logic Level Shifter TTL−Compatible Inputs Features • • • • • • • • • • Designed for 1.65 V to 5.5 VCC Operation High Speed: tPD = 3.5 ns Typ at VCC = 5.0 V Low Power Dissipation: ICC = 1 mA (Max) at TA = 25°C


    Original     		PDF MC74VHC1GT50 SC-88A/SOT-353/SC-70 MC74VHC1GT50 MC74VHC1GT50/D MC74VHC1GT50DTT

    A114

    Abstract: A115 C101 JESD22 MC74VHC1GT14
    Text: MC74VHC1GT14 Schmitt−Trigger Inverter / CMOS Logic Level Shifter LSTTL−Compatible Inputs Features • • • • • • • • • High Speed: tPD = 4.5 ns Typ at VCC = 5.0 V Low Power Dissipation: ICC = 1 mA (Max) at TA = 25°C TTL−Compatible Inputs: VIL = 0.8 V; VIH = 2.0 V


    Original     		PDF MC74VHC1GT14 MC74VHC1GT14 MC74VHC1GT14/D A114 A115 C101 JESD22

    VM MARKING CODE SOT353

    Abstract: A114 A115 C101 JESD22 MC74VHC1GT86
    Text: MC74VHC1GT86 2−Input Exclusive OR Gate / CMOS Logic Level Shifter with LSTTL−Compatible Inputs Features • • • • • • • • • High Speed: tPD = 4.8 ns Typ at VCC = 5.0 V Low Power Dissipation: ICC = 1 mA (Max) at TA = 25°C TTL−Compatible Inputs: VIL = 0.8 V; VIH = 2.0 V


    Original     		PDF MC74VHC1GT86 SC-88A/SOT-353/SC-70 MC74VHC1GT86 MC74VHC1GT86/D VM MARKING CODE SOT353 A114 A115 C101 JESD22

    Untitled

    Abstract: No abstract text available
    Text: MMJT9410 Bipolar Power Transistors NPN Silicon Features • SOT−223 Surface Mount Packaging • Epoxy Meets UL 94 V−0 @ 0.125 in • These Devices are Pb−Free and are RoHS Compliant http://onsemi.com POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE sat = 0.2 VOLTS


    Original     		PDF MMJT9410 OT-223 MMJT9410/D

    ncp785ah33

    Abstract: No abstract text available
    Text: NCP785A Product Preview Wide Input Voltage Range 10 mA Ultra-Low Iq, High PSRR Linear Regulator http://onsemi.com The NCP785A is a high−performance linear regulator, offering a very wide operating input voltage range of up to 450 V DC, with an output current of up to 10 mA.


    Original     		PDF NCP785A NCP785A NCP785A/D ncp785ah33

    MMJT9410

    Abstract: MMJT9410G
    Text: MMJT9410 Preferred Device Bipolar Power Transistors NPN Silicon Features • Collector −Emitter Sustaining Voltage − VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc http://onsemi.com • High DC Current Gain − • • • • • POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS


    Original     		PDF MMJT9410 OT-223 MMJT9410/D MMJT9410 MMJT9410G

    Untitled

    Abstract: No abstract text available
    Text: NJT4031N, NJV4031NT1G, NJV4031NT3G Bipolar Power Transistors NPN Silicon http://onsemi.com Features NPN TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS • Collector −Emitter Sustaining Voltage − VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc  High DC Current Gain −


    Original     		PDF NJT4031N, NJV4031NT1G, NJV4031NT3G NJT4031N/D

    A114

    Abstract: A115 C101 JESD22 M74VHC1GT04DFT1G MC74VHC1GT04 MC74VHC1GT04DFT1
    Text: MC74VHC1GT04 Inverting Buffer / CMOS Logic Level Shifter LSTTL−Compatible Inputs Features • • • • • • • • • High Speed: tPD = 3.8 ns Typ at VCC = 5.0 V Low Power Dissipation: ICC = 1 mA (Max) at TA = 25°C http://onsemi.com MARKING DIAGRAMS


    Original     		PDF MC74VHC1GT04 SC-88A MC74VHC1GT04 MC74VHC1GT04/D A114 A115 C101 JESD22 M74VHC1GT04DFT1G MC74VHC1GT04DFT1

    Untitled

    Abstract: No abstract text available
    Text: MC74VHC1GT02 Single 2−Input NOR Gate/ CMOS Logic Level Shifter LSTTL−Compatible Inputs Features • • • • • • • • • High Speed: tPD = 4.7 ns Typ at VCC = 5.0 V Low Power Dissipation: ICC = 1 mA (Max) at TA = 25°C TTL−Compatible Inputs: VIL = 0.8 V; VIH = 2.0 V


    Original     		PDF MC74VHC1GT02 SC-88A/SC70-5/SOT-353 MC74VHC1GT02 MC74VHC1GT02/D