SN74L47
Abstract: Seven Segment Display texas instruments SN74L46 SN54L46 SN54L01 SN54147 BI resistor network
Text: LOW-POWER CIRCUIT TYPES SN54L46, SN54L47. SN74L46, SN74L47 TTL M SI BCD-TO-SEVEN-SEGMENT DECODER/DRIVERS • Direct Drive for Indicators • Open-Collector Outputs • Lamp-Test Provision • Lamp Intensity Modulation Capability JOR N DUAL-IN-LINE PACKAGE TOP VIEW
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SN54L46,
SN54L47.
SN74L46,
SN74L47
SN54L01
Seven Segment Display texas instruments
SN74L46
SN54L46
SN54147
BI resistor network
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS PHN70308 7 N-channel 30/80 mQ FET array Objective specification Philips Sem iconductors 1999 Apr 06 PHILIPS Philips Semiconductors Objective specification 7 N-channel 30/80 mQ FET array PHN70308 FEATURES PINNING SOT341-1 SSOP28 • 30 m£2 pass/isolation FET
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PHN70308
PHN70308
OT341-1
SSOP28)
135002/00/01/pp5
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E408
Abstract: CK408 CK-408
Text: y i v — SÎ6926DQ - Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET V d» (V ) R o S fO N ) IG ) 0.035 @ V g s = 4.5 V 0.040 @ V G s = 3.0 V 20 0.045 @ V q s = 2 5 V
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6926DQ
ec-96
E408
CK408
CK-408
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Untitled
Abstract: No abstract text available
Text: ^ 7 2 4 0 TOSHIBA 002Ö3T7 TIT TC51Y18165BFT-70 PRELIMINARY 1,048,576 WORD X 16 BIT EDO DYNAMIC RAM Description The TC51V18165BFT is the Hyper Page Mode (EDO) dynamic RAM organized 1,048,576 w ords by 16 bits. The TC51V18165BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide
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TC51Y18165BFT-70
TC51V18165BFT
B-146
002A404
DR16190695
TC51V18165BFT-70
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0x2100
Abstract: T611F X204-2 X2020 pic quadrature encoder
Text: ANALOG DEVICES High Performance DSP-Based Servo Motor Controller ADMC300 Independent Offset Cali brati on for Each Channel Two Dedicated ADC In t e r r u p t s Internal 2.5 V Reference Three M ul ti pl exer Control Pins for External Expansion Har dwar e or So f t wa r e Convert Start
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ADSP-2100
24-Bit
16-Bit
0x2100
T611F
X204-2
X2020
pic quadrature encoder
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con tech
Abstract: ay dm gate ng CHANNEL WELL TECH
Text: u TMOS What’s An Enhancement-Mode, Silicon Gate, Power MOSFET? It is a po w e r transisto r that uses M etal O xid e S e m icon ducto r tech nolog y to fabricate a Field Effect Transistor. The de vice is con tro lled by applying a volta ge to the M O S gate to enhance
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ATV2500L
Abstract: ci017
Text: ATV2500H/L Features • Third Generation Programmable Logic Structure Easily Achieves Gate Utilization Factors of 80 Percent Increased Logic Flexibility 86 Inputs and 72 Sum Terms Flexible Output Macrocell 48 Flip-Flops • 2 per Macrocell 3 Sum Terms - Can Be OR'ed and Shared
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ATV2500H/L
ATV2500L)
40-pin
44-Lead
PackageV2500L-45KM
ATV2500L-45LM
40DW6
ATV2500L-45
DM/883
ATV2500L-45KM/883
ATV2500L
ci017
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Untitled
Abstract: No abstract text available
Text: TOSHIBA =10^7240 QQ 2ß 3 55 4b0 • TC51V17800BNJS/BNTS60/70 PRELIMINARY 2,097,152 WORD X 8 BIT FAST PAGE DYNAMIC RAM Description The TC51V17800BNTS/BNJS is the fast page dynamic RAM organized 2,097,152 words by 8 bits. The TC51V17800BNTS/BNJS utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques
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TC51V17800BNJS/BNTS60/70
TC51V17800BNTS/BNJS
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TD9N10E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount N-Channel Enhancement-Mode Silicon Gate T h is a d v a n c e d T M O S E -F E T is d e s ig n e d to w ith s ta n d high
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TD9N10E/D
MTD9N10E/D
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Untitled
Abstract: No abstract text available
Text: TOSHIBA ' m ^0^7240 0020 34 1 R7b • TC5117800BNJ/BNT-60/70 PRELIMINARY 2,097,152 WORD X 8 BIT FAST PAGE DYNAMIC RAM DRAM Description Features Key Parameters 2,097,152 word by 8 bit organization Fast access time and cycle time Single power supply of 5V±10% with a built-in VBB generator
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TC5117800BNJ/BNT-60/70
715mW
TC5117800BNT-60)
605mW
TC5117800BNT-70)
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Untitled
Abstract: No abstract text available
Text: vO'LmFrnm M 1 <' T he I nfin it e " 1 I I P ow er UN Doc #: 34064 MC33064/MC34064 1 ¡< >• N I c- s H D I n n o v a t io n of U n d e r v o l t a g e P r o d u c t i o n S e n s i n g D DESCRIPTION The MC34064 is an undervoltage sensing circuit designed specifically for
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MC33064/MC34064
MC34064
340pA
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2SJ214
Abstract: 2SJ172 0S0250
Text: HITACHI 2SJ214 L ,2SJ214(S) SILICON P-CHANNEL MOS FET 10 2 I 0.3 r 4.44±0.2 HIGH SPEED POWER SWITCHING • FEATURES • Low On-Resistance • High Speed Switching • Low Drive Current • 4-V Gate Drive Device —Can be driven from 5 V 30urce • Suitable for Motor Drive, DC-DC Convertor, Power
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2SJ214
7fl-25
FOS--10VÂ
2SJ172
0S0250
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74HC00F
Abstract: No abstract text available
Text: TOSHIBA TC74LVQ00F/FN/FS Quad 2-Input NAND Gate The TC74LVQ00 is a high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate and double-layer metal wir ing C2MOS technology. Designed for use in 3.3 Vott systems, it achieves high speed operation while maintaining the CMOS low power dis
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TC74LVQ00F/FN/FS
TC74LVQ00
74HC00F
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MRF163
Abstract: Motorola AN211
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF163 The RF MOSFET Line 25 W N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR 2 .0 -4 0 0 M H z N-CHANNEL MOS BROADBAND RF POWER designed for w ideband large-signal output and driver applica tions in the 2 0 to 4 00 MHz range
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MRF163
RF163
MRF163
Motorola AN211
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386SX
Abstract: 80386-sx buffer SL9010 OPT387 SL901
Text: SYSTEM CONTROLLER LQGICSTAR _ SL 901° PRELIMINARY FEATURES • AT system control logic. • Supports 80386,80386 SX P9 , or 80286-based designs. • 16,20,25 MHz options. • Clock switching and reset logic. • Programmable wait states for Memory and I/O.
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SL901Â
80286-based
4160-B
SL9010
386SX
80386-sx buffer
OPT387
SL901
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kjm 038
Abstract: No abstract text available
Text: HARRIS H A SEflICOND R R SECTOR bflE D Bi 4302571 OOSa?^^ I S 5ST • H F H F HAS A 1 1 1 1 2 S E M I C O N D U C T O R A Ultra High-Speed Current Feedback Amplifier March 1993 Features Description • Low D isto rtio n 30M Hz .-66dBc
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-66dBc
850MHz
300V/p*
kjm 038
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BLF1048 UHF power LDMOS transistor Preliminary specification Supersedes data of 1998 Jul 07 File under Discrete Semiconductors, SC19a Philips Sem iconductors 1998 Aug 05 PHILIPS Philips Semiconductors Preliminary specification UHF power LDMOS transistor
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BLF1048
SC19a
BLF1048
125108/00/03/pp8
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74s188 programming
Abstract: 74S471 N82S06 74S470 dip18 package str 52100 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 74S472 PROM PROGRAMMING 8080a 74S287 programming instructions
Text: The E ngineering Staff of TEXAS INSTRUMENTS INCORPORATED Semiconductor Memory Data Book y for \ T exas In Design Engineers s t r u m e n t s >le of Contents • Alphanumeric Index • GENERAL INFORMATION Selection Guides • Glossary INTERCHANGEABILITY GUIDE
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38510/MACH
MIL-M-38510
74s188 programming
74S471
N82S06
74S470
dip18 package
str 52100
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
74S472 PROM PROGRAMMING
8080a
74S287 programming instructions
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TC51V18325BJ
Abstract: No abstract text available
Text: TOSHIBA TC51V18325BJ/BFIW70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM Description The TC51V18325BJ/BFT' is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 words by 32 bits. The TC51V18325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to
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TC51V18325BJ/BFIW70
TC51V18325BJ/BFT'
TC51V18325BJ/BFT
400mil)
DR16230995
I/024
I/025
I/032
TC51V18325BJ
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ELAP cm 76
Abstract: Elap cm 50
Text: S A B 82538 SA F 82538 SIEM ENS 2 Fun ctio nal D escriptio n 2.1 G en eral T he E S C C 8 d istin g u ish e s itself from oth er com m u nica tion con tro llers by its advanced cha racteristics. T he m ost im p ortan t are: • Eight in de pen de nt serial channels.
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diode AR S1 99
Abstract: diode AR s1 56
Text: DISC RETE S E M IC O N D U C TO R S InlEET PHN405 4 N-channel 60 m£2 FET array enhancement mode MOS transistors 1998 Mar 17 Product specification Supersedes data of 1997 Jun 19 File under Discrete Semiconductors, SC13 Philips Semiconductors PHILIPS PHILIPS
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PHN405
OT338-1
SSOP16)
135108/00/03/pp12
diode AR S1 99
diode AR s1 56
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74HC32 equivalent
Abstract: No abstract text available
Text: TOSHIBA TC74LVQ32F/EN/FS Q U A D 2 - Input O R Gate The TC74LVQ32 is a high speed CMOS 2-INPUT OR GATE fabricated with silicon gate and double-layer metal wiring CzMOS technology. Designed for use in 3.3 Volt systems, it achieves high speed operation while maintaining the CMOS low power dis
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TC74LVQ32F/EN/FS
TC74LVQ32
74HC32 equivalent
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false
Abstract: VIA C7-D
Text: it t ic i 9^ *- Am 5380 SCSI Interface Controller P R E L IM IN A R Y DISTINCTIVE CHARACTERISTICS SCSI Interface • • • • • • mM em ory or I/O m apped interface . D M A o r program m ed I/O a |\|o rm a| o r Block m ode DMA # O ptional CPU interrupts
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Am5380
Am5380
40-pin
false
VIA C7-D
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tms 2300
Abstract: TMS2300 2560-BIT TMS2300NC
Text: TMS 2300 JC. TM S 2300 NC 2560-BIT DYNAMIC READ-ONLY M EM O RY MOS LSI features 2 5 6 0 -b it capacity 2 5 6 x 10 D yn am ic operation and static storage M axim u m access tim e — 5 5 0 ns M axim um cycle tim e — 5 5 0 ns Full T T L /D T L com patible w ith o u t external components
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2560-BIT
28-pin
tms 2300
TMS2300
TMS2300NC
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