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    AVALANCHE TRANSISTORS Search Results

    AVALANCHE TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    AVALANCHE TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUZ72A

    Abstract: No abstract text available
    Text: BUZ72A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ72A VDSS R DS on ID 100 V < 0.25 Ω 11 A TYPICAL RDS(on) = 0.23 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY


    Original     		PDF BUZ72A 100oC 175oC O-220 BUZ72A

    STD4N25

    Abstract: No abstract text available
    Text: STD4N25 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE STD4N25 • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 250 V < 1.1 Ω 4A TYPICAL RDS(on) = 0.7 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED


    Original     		PDF STD4N25 100oC O-251) O-252) STD4N25

    BUZ72A

    Abstract: No abstract text available
    Text: BUZ72A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ72A • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 100 V < 0.25 Ω 11 A TYPICAL RDS(on) = 0.23 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE


    Original     		PDF BUZ72A 100oC 175oC O-220 BUZ72A

    AVALANCHE TRANSISTOR

    Abstract: FMMT417 ZTX413 ZTX415 4N7 CAPACITOR FMMT415 DIODE 4N7 disc capacitor 4n7, napoli avalanche transistors
    Text: Design Note 24 Issue 1 October 1995 The ZTX413 Avalanche Transistor Low Voltage Operation up to 50A standard transistors.The ZTX413 provides avalanche operation over a voltage range of 60 to 150V, and can handle pulse avalanche currents of up to 50A See Figure 1 . These features


    Original     		PDF ZTX413 ZTX413 ZTX413, ZTX415 FMMT415 FMMT417 ED-14, DN24-1 AVALANCHE TRANSISTOR 4N7 CAPACITOR DIODE 4N7 disc capacitor 4n7, napoli avalanche transistors

    STD4N25

    Abstract: No abstract text available
    Text: STD4N25 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE STD4N25 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 250 V < 1.1 Ω 4A TYPICAL RDS(on) = 0.7 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED


    Original     		PDF STD4N25 100oC O-251) O-252) O-251 STD4N25

    STD4N25

    Abstract: No abstract text available
    Text: STD4N25 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE STD4N25 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 250 V < 1.1 Ω 4A TYPICAL RDS(on) = 0.7 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED


    Original     		PDF STD4N25 100oC O-251) O-252) STD4N25

    BUZ11A

    Abstract: No abstract text available
    Text: BUZ11A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11A • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.055 Ω 27 A TYPICAL RDS(on) = 0.048 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE


    Original     		PDF BUZ11A 100oC 175oC O-220 BUZ11A

    IRF620FI equivalent

    Abstract: IRF620 IRF620FI
    Text: IRF620 IRF620FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF620 IRF620FI • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.8 Ω < 0.8 Ω 6A 4A TYPICAL RDS(on) = 0.55 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF IRF620 IRF620FI 100oC O-220 ISOWATT220 IRF620FI equivalent IRF620 IRF620FI

    IRF620

    Abstract: EQUIVALENT IRF620FI transistor irf620 IRF620FI
    Text: IRF620 IRF620FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF620 IRF620FI • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.8 Ω < 0.8 Ω 6A 4A TYPICAL RDS(on) = 0.55 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF IRF620 IRF620FI 100oC O-220 ISOWATT220 IRF620 EQUIVALENT IRF620FI transistor irf620 IRF620FI

    BUZ10

    Abstract: No abstract text available
    Text: BUZ10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ10 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.07 Ω 20 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE


    Original     		PDF BUZ10 100oC 175oC O-220 BUZ10

    BUZ10

    Abstract: buz10 MOROCCO
    Text: BUZ10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ10 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.07 Ω 20 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE


    Original     		PDF BUZ10 100oC 175oC O-220 BUZ10 buz10 MOROCCO

    BUZ72A

    Abstract: BUZ72A DATASHEET thomson tr 62
    Text: BUZ72A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ72A • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.25 Ω 11 A TYPICAL RDS(on) = 0.23 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE


    Original     		PDF BUZ72A 100oC 175oC O-220 BUZ72A BUZ72A DATASHEET thomson tr 62

    Untitled

    Abstract: No abstract text available
    Text: I BUZ11 BUZ11FI MAGNA N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW GATE CHARGE HIGH CURRENT CAPABILITY 175°C OPERATING TEMPERATURE FOR STANDARD PACKAGE ISOLATED PACKAGE UL RECOGNIZED,


    OCR Scan     		PDF BUZ11 BUZ11FI BUZ11 O-220 ISOWATT220

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistors PHP2N50E, PHB2N50E, PHD2N50E Avalanche energy FEATURES QUICK REFERENCE DATA Repetitive Avalanche Rated Fast switching Stable ott-state characteristics


    OCR Scan     		PDF PHP2N50E, PHB2N50E, PHD2N50E PHP2N50E T0220AB)

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Preliminary specification PowerMOS transistors PHB9N60E, PHW9N60E Avalanche energy FEATURES • • • • • QUICK REFERENCE DATA SYMBOL Repetitive Avalanche Rated Fast switching


    OCR Scan     		PDF PHB9N60E, PHW9N60E OT429 T0247)

    N50E

    Abstract: PHP12N50E TRANSISTOR N50E
    Text: Product specification Philips Semiconductors PowerMOS transistors PHP12N50E Avalanche energy FEATURES • • • • • SYMBOL Repetitive Avalanche Rated Fast switching Stable off-state characteristics


    OCR Scan     		PDF PHP12N50E PHP11N50E T0220AB) PHP12N50E T0220) N50E TRANSISTOR N50E

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistors PHP7N60E, PHB7N60E, PHW7N60E Avalanche energy SYMBOL FEATURES QUICK REFERENCE DATA Repetitive Avalanche Rated Fast switching Stable off-state characteristics


    OCR Scan     		PDF PHP7N60E, PHB7N60E, PHW7N60E PHP7N60E T0220AB) OT429 T0247)

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistors PHP8N50E, PHB8N50E, PHW8N50E Avalanche energy rated_ SYMBOL FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics


    OCR Scan     		PDF PHP8N50E, PHB8N50E, PHW8N50E PHP8N50E PHW8N50E

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistors PHP6ND50E, PHB6ND50E FREDFET, Avalanche energy rated_ FEATURES SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics


    OCR Scan     		PDF PHP6ND50E, PHB6ND50E

    1085LD

    Abstract: PHB9N60E PHP9N60E PHW9N60E T0220AB T0247 T404
    Text: Preliminary specification Philips Semiconductors PowerMOS transistors PHP9N60E, PHB9N60E, PHW9N60E Avalanche energy SYMBOL FEATURES • • • • • QUICK REFERENCE DATA d Repetitive Avalanche Rated


    OCR Scan     		PDF PHP9N60E, PHB9N60E, PHW9N60E PHP9N60E T0220AB) PHW9N60E OT429; 1085LD PHB9N60E T0220AB T0247 T404

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistors PHP7N60E, PHB7N60E, PHW7N60E Avalanche energy FEATURES QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching Stable off-state characteristics


    OCR Scan     		PDF PHP7N60E, PHB7N60E, PHW7N60E PHP7N60E T0220uotation

    circuit diagram irf520

    Abstract: GC233
    Text: SGS-THOMSON IRF520 IRF520FI IttJtSTMtKS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF520 IRF520FI Voss R d S o ii Id 100 V 100 V 0.27 Q 0.27 Q 10 A 7 A • . ■ . . ■ AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		PDF IRF520 IRF520FI IRF520FI O-220 ISOWATT220 IRF520/FI GC2339G GC20260 GC20270 circuit diagram irf520 GC233

    B 1449 transistor

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistors PHP3N50E, PHB3N50E Avalanche energy rated_ FEATURES • • • • • SYMBOL Repetitive Avalanche Rated Fast switching Stable off-state characteristics


    OCR Scan     		PDF PHP3N50E, PHB3N50E PHP3N50E T0220AB) PHB3N50E B 1449 transistor

    TO218 package

    Abstract: irfp240 irfp240 circuit diagram IRFP240FI TO-218 Package
    Text: SGS-THOMSON :U OT KS IRFP240 IRFP240FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IR FP240 IRFP240FI . • . . V dss RüS(on Id 200 V 200 V 0.18 n 0.18 Q 20 A 13 A AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		PDF IRFP240 IRFP240FI FP240 FP240 FP240FI 15racteristics IRFP240/H IRFP240/FI TO218 package irfp240 circuit diagram IRFP240FI TO-218 Package