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    AVALANCHE PULSE GENERATOR Search Results

    AVALANCHE PULSE GENERATOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=600 V / Iout=2 A / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=600 V / Iout=5 A / SSOP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=600 V / Iout=2.5 A / SSOP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=600 V / Iout=2 A / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=600 V / Iout=1 A / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    AVALANCHE PULSE GENERATOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    AVALANCHE TRANSISTOR

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR AVALANCHE TRANSISTOR PROVISIONAL DATASHEET ISSUE 2 - MARCH 94 FEATURES * Avalanche mode operation * 50A Peak avalanche current * Low inductance packaging APPLICATIONS * Laser LED drivers * * Fast edge generation High speed pulse generators


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    100hA ZTX413 20MHz AVALANCHE TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR AVALANCHE TRANSISTOR PROVISIONAL DATASHEET ISSUE 2 - MARCH 94 FEATURES * Avalanche mode operation * 50A Peak avalanche current * Low inductance packaging APPLICATIONS * Laser LED drivers * Fast edge generation * High speed pulse generators


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    001G35S PDF

    edge emitter LED

    Abstract: AVALANCHE TRANSISTOR avalanche LED driver 110V 4.7nF base, collector, emitter partmarking 6 C ZUMT413
    Text: SOT323 NPN SILICON PLANAR AVALANCHE TRANSISTOR ZUMT413 ISSUE 1 – DECEMBER 1998 FEATURES * Avalanche mode operation * 50A Peak avalanche current * Low inductance packaging APPLICATIONS * Laser LED drivers * Fast edge generation * High speed pulse generators


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    OT323 ZUMT413 20MHz 10KHz edge emitter LED AVALANCHE TRANSISTOR avalanche LED driver 110V 4.7nF base, collector, emitter partmarking 6 C ZUMT413 PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR FMMT413 PROVISIONAL DATASHEET ISSUE 2 - MARCH 1996 FEATURES * Avalanche mode operation * 50A Peak avalanche current * Low inductance packaging APPLICATIONS * Laser LED drivers * Fast edge generation * High speed pulse generators


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    FMMT413 FMMT413 7057fl 20MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR AVALANCHE TRANSISTOR ISSUE 4 - NOVEMBER 1995 FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current Pulse width=20ns * Low inductance package APPLICATIONS * Laser LED drivers * Fast edge generation *


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    001G35S PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR AVALANCHE TRANSISTOR ISSUE 4 - NOVEMBER 1995 FEATURES * Specifically designed for Avalanche m ode operation * 60A Peak Avalanche Current Pulse width=20ns * Low inductance package APPLICATIONS * Laser LED drivers * Fast edge generation


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    1070perations PDF

    ZTX415

    Abstract: transistor 200V 100MA NPN AVALANCHE TRANSISTOR DSA003766 3171 i.c
    Text: NPN SILICON PLANAR AVALANCHE TRANSISTOR ZTX415 ISSUE 4 - NOVEMBER 1995 FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current Pulse width=20ns * Low inductance package APPLICATIONS * Laser LED drivers * Fast edge generation


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    ZTX415 200mA 620pF 100mA 20MHz 100MHz ZTX415 transistor 200V 100MA NPN AVALANCHE TRANSISTOR DSA003766 3171 i.c PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR AVALANCHE TRANSISTOR % ! ZTX415 ISSUE 4 - NOVEMBER 1995 FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current Pulse width=20ns * Low inductance package APPLICATIONS * Laser LED drivers * Fast edge generation


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    ZTX415 100mA 200mA 620pF PDF

    FMMT415

    Abstract: No abstract text available
    Text: FMMT415 FMMT417 SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR % ! ISSUE 4 - OCTOBER 1995 ✪ FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current Pulse width=20ns APPLICATIONS * Laser LED drivers * Fast edge generation


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    FMMT415 FMMT417 100mA 200mA FMMT415 PDF

    K1 transistor

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT413 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data • Avalanche Transistor • • • 50A Peak Avalanche Current Pulse width = 20ns BVCES > 150V • Case: SOT23 Case Material: Molded Plastic. “Green” Molding Compound.


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    FMMT413 J-STD-020 MILSTD-202, DS33083 K1 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT415 FMMT417 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data • Avalanche Transistor • • • 60A Peak Avalanche Current Pulse width = 20ns BVCES > 260V (415) & 320V (417) • Case: SOT23 Case Material: Molded Plastic. “Green” Molding Compound


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    FMMT415 FMMT417 AEC-Q101 J-STD-020 FMMT415-FMMT417 DS33084 PDF

    IRF350R

    Abstract: IRF350 IRF351R IRF352R IRF353R transistors bipolar
    Text: _ Rugged Power MOSFETs File Num ber 2006 IRF350R, IRF351R, IRF352R, IRF353R Avalanche Energy Rated N-Channel Power MOSFETs 13A and 15A, 350V-400V ros on = 0 .3 0 and 0 .4 0 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated


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    IRF350R, IRF351R, IRF352R, IRF353R 50V-400V 92CS-426M IRF352R IRF353R IRF350R IRF350 IRF351R transistors bipolar PDF

    F110F

    Abstract: SK 6211 TD-205A flower in the rain IRFF110R IRFF111R IRFF112R IRFF113R
    Text: Rugged Power M OSFETs File N u m b e r 2022 IRFF110R, IRFF111R.IRFF112R, IRFF113R Avalanche Energy Rated N-Channel Power MOSFETs 3.0A and 3.5A, 60V-100V rDs on = 0.60 and 0.8CÎ N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated


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    Number2022 IRFF110R, IRFF111R IRFF112R, IRFF113R 0V-100V tICS-41111 IRFF111R, IRFF112R F110F SK 6211 TD-205A flower in the rain IRFF110R IRFF113R PDF

    FMMT415

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR AVALANCHETRANSISTOR F M M T 4 1 5 F M M T 4 1 7 ISSU E 4 -OCTOBER 1995 O FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current Pulse width=20ns APPLICATIONS * Laser LED drivers * Fast edge generation


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    FMMT415 FMMT417 FMMT417 FMMT415 PDF

    F421

    Abstract: IRFF420R IRFF421R IRFF422R IRFF423R nanosecond pulse generator avalanche pulse generator
    Text: Rugged Power MOSFETs_ IRFF420R, IRFF421R, IRFF422R, IRFF423R File Number 2030 Avalanche Energy Rated N-Channel Power MOSFETs 1.4 A a n d 1.6 A , 4 5 0 V -5 0 0 V ros on = 3.00 and 4.00 N-CHANNEL ENHANCEMENT MODE Feature«: • Single pulse avalanche energy rated


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    IRFF420R, IRFF421R, IRFF422R, IRFF423R 50V-500V IRFF422R IRFF423R 92CS-42660 F421 IRFF420R IRFF421R nanosecond pulse generator avalanche pulse generator PDF

    IRF840R

    Abstract: RF840 IRF840 IRF841R IRF842R IRF843R M2R DIODE
    Text: Rugged Power MOSFETs IRF840R, IRF841R IRF842R, IRF843R File N u m b er 2034 Avalanche Energy Rated N-Channel Power MOSFETs 8A and 7A, 500V-400V rDs on = 0.850 and 1.10 TE R M IN A L DIAGRAM Features: • ■ ■ ■ ■ Single pulse avalanche energy rated


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    IRF840R, IRF841R IRF842R, IRF843R 00V-400V IRF841R, IRF842R IRF843R 92CS-42659 IRF840R RF840 IRF840 M2R DIODE PDF

    circuits of IRF150

    Abstract: IRF150-152
    Text: HARRIS IBM50/151/152/153 IRF150R/151R/152R/153R N -Channel Power MOSFETs Avalanche Energy Rated* August 19 9 1 Package Features TO -2Q 4AE • 33A and 40A, 60V - 100V • rDS on = 0 .0 5 5 ÎÎ and 0 .0 8 fi DRAIN (FLANGE) y SOURCE • Single Pulse Avalanche Energy Rated*


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    IBM50/151/152/153 IRF150R/151R/152R/153R IRF150, IRF151, IRF152, IRF153 IRF150R, IRF151R, IRF152R, IRF153R circuits of IRF150 IRF150-152 PDF

    IR LFN

    Abstract: mosfet 350v 10A IRFP340R IRFP341R IRFP342R IRFP343R power mosfet 350v to 247 irfip341r N-channel MOSFET to-247 50a
    Text: Rugged Power MOSFETs. IRFP340R, IRFP341R, IRFP342R, IRFP343R File Number 2088 Avalanche Energy Rated N-Channel Power MOSFETs 10A and 8A, 400V and 350V rDs on = 0.550 and 0.800 N -C H A N N E L E N H A N C E M E N T M O D E Feature«: • Single pulse avalanche energy rated


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    IRFP340R, IRFP341R, IRFP342R, IRIFP343R IRFP342R IRFP343R 92CS-4265Â IR LFN mosfet 350v 10A IRFP340R IRFP341R power mosfet 350v to 247 irfip341r N-channel MOSFET to-247 50a PDF

    IIRF743R

    Abstract: IRF740R IRF741R IRF742R IRF743R
    Text: Rugged Power MOSFETs IRF740R, IRF741R IRF742R, IRF743R File Number 2033 Avalanche Energy Rated N-Channel Power M OSFETs T E R M IN A L D IA G R A M 10A and 8A, 400V-300V rDs on = 0.550 and 0.80 D Features: • Single pulse avalanche energy rated ■ SOA is power-dissipation lim ited


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    IRF740R, IRF741R IRF742R, IRF743R 00V-300V IRF741R, IRF742R IIRF743R F742R IRF740R IRF743R PDF

    Untitled

    Abstract: No abstract text available
    Text: FSL116HR Green Mode Fairchild Power Switch FPS Features Description • • Internal Avalanche-Rugged SenseFET (650V)  Precision Fixed Operating Frequency with Frequency Modulation for Attenuating EMI     Internal Startup Circuit The FSL116HR integrated Pulse Width Modulator


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    FSL116HR FSL116HR 265VAC, PDF

    Untitled

    Abstract: No abstract text available
    Text: FSL116HR Green Mode Fairchild Power Switch FPS Features Description • • Internal Avalanche-Rugged SenseFET (650V)  Precision Fixed Operating Frequency with Frequency Modulation for Attenuating EMI     Internal Startup Circuit The FSL116HR integrated Pulse Width Modulator


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    FSL116HR 265VAC, FSL116HR PDF

    Untitled

    Abstract: No abstract text available
    Text: FSL116LR Green Mode Fairchild Power Switch FPS Features Description • • Internal Avalanche-Rugged SenseFET (650V)  Precision Fixed Operating Frequency with Frequency Modulation for Attenuating EMI     Internal Startup Circuit The FSL116LR integrated Pulse Width Modulator


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    FSL116LR FSL116LR 265VAC, PDF

    FSL116LR

    Abstract: No abstract text available
    Text: FSL116LR Green Mode Fairchild Power Switch FPS Features Description ƒ ƒ Internal Avalanche-Rugged SenseFET (650V) ƒ Precision Fixed Operating Frequency with Frequency Modulation for Attenuating EMI ƒ ƒ ƒ ƒ Internal Startup Circuit The FSL116LR integrated Pulse Width Modulator


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    FSL116LR 265VAC, FSL116LR PDF

    FSL116LR

    Abstract: No abstract text available
    Text: FSL116LR Green Mode Fairchild Power Switch FPS Features Description • • Internal Avalanche-Rugged SenseFET (650V)  Precision Fixed Operating Frequency with Frequency Modulation for Attenuating EMI     Internal Startup Circuit The FSL116LR integrated Pulse Width Modulator


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    FSL116LR 265VAC, FSL116LR PDF