AVALANCHE PULSE Search Results
AVALANCHE PULSE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TPD4162F |
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Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=600 V / Iout=0.7 A / HSSOP31 |
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TPD4207F |
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Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=600 V / Iout=5 A / SSOP30 |
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TPD4164K |
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Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=600 V / Iout=2 A / HDIP30 |
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TPD4204F |
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Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=600 V / Iout=2.5 A / SSOP30 |
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TPD4206F |
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Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=500 V / Iout=2.5 A / SSOP30 |
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AVALANCHE PULSE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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OM55N10NK
Abstract: OM60N10NK OM75N05NK OM75N06NK
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Contextual Info: NPN SILICON PLANAR AVALANCHE TRANSISTOR ISSUE 4 - NOVEMBER 1995 FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current Pulse width=20ns * Low inductance package APPLICATIONS * Laser LED drivers * Fast edge generation * |
OCR Scan |
001G35S | |
AVALANCHE TRANSISTORContextual Info: NPN SILICON PLANAR AVALANCHE TRANSISTOR PROVISIONAL DATASHEET ISSUE 2 - MARCH 94 FEATURES * Avalanche mode operation * 50A Peak avalanche current * Low inductance packaging APPLICATIONS * Laser LED drivers * * Fast edge generation High speed pulse generators |
OCR Scan |
100hA ZTX413 20MHz AVALANCHE TRANSISTOR | |
Contextual Info: NPN SILICON PLANAR AVALANCHE TRANSISTOR PROVISIONAL DATASHEET ISSUE 2 - MARCH 94 FEATURES * Avalanche mode operation * 50A Peak avalanche current * Low inductance packaging APPLICATIONS * Laser LED drivers * Fast edge generation * High speed pulse generators |
OCR Scan |
001G35S | |
Contextual Info: NPN SILICON PLANAR AVALANCHE TRANSISTOR ISSUE 4 - NOVEMBER 1995 FEATURES * Specifically designed for Avalanche m ode operation * 60A Peak Avalanche Current Pulse width=20ns * Low inductance package APPLICATIONS * Laser LED drivers * Fast edge generation |
OCR Scan |
1070perations | |
ZTX415
Abstract: transistor 200V 100MA NPN AVALANCHE TRANSISTOR DSA003766 3171 i.c
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ZTX415 200mA 620pF 100mA 20MHz 100MHz ZTX415 transistor 200V 100MA NPN AVALANCHE TRANSISTOR DSA003766 3171 i.c | |
edge emitter LED
Abstract: AVALANCHE TRANSISTOR avalanche LED driver 110V 4.7nF base, collector, emitter partmarking 6 C ZUMT413
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OT323 ZUMT413 20MHz 10KHz edge emitter LED AVALANCHE TRANSISTOR avalanche LED driver 110V 4.7nF base, collector, emitter partmarking 6 C ZUMT413 | |
Contextual Info: NPN SILICON PLANAR AVALANCHE TRANSISTOR % ! ZTX415 ISSUE 4 - NOVEMBER 1995 FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current Pulse width=20ns * Low inductance package APPLICATIONS * Laser LED drivers * Fast edge generation |
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ZTX415 100mA 200mA 620pF | |
FMMT415Contextual Info: FMMT415 FMMT417 SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR % ! ISSUE 4 - OCTOBER 1995 ✪ FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current Pulse width=20ns APPLICATIONS * Laser LED drivers * Fast edge generation |
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FMMT415 FMMT417 100mA 200mA FMMT415 | |
Contextual Info: SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR FMMT413 PROVISIONAL DATASHEET ISSUE 2 - MARCH 1996 FEATURES * Avalanche mode operation * 50A Peak avalanche current * Low inductance packaging APPLICATIONS * Laser LED drivers * Fast edge generation * High speed pulse generators |
OCR Scan |
FMMT413 FMMT413 7057fl 20MHz | |
K1 transistorContextual Info: A Product Line of Diodes Incorporated FMMT413 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data • Avalanche Transistor • • • 50A Peak Avalanche Current Pulse width = 20ns BVCES > 150V • Case: SOT23 Case Material: Molded Plastic. “Green” Molding Compound. |
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FMMT413 J-STD-020 MILSTD-202, DS33083 K1 transistor | |
Contextual Info: A Product Line of Diodes Incorporated FMMT415 FMMT417 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data • Avalanche Transistor • • • 60A Peak Avalanche Current Pulse width = 20ns BVCES > 260V (415) & 320V (417) • Case: SOT23 Case Material: Molded Plastic. “Green” Molding Compound |
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FMMT415 FMMT417 AEC-Q101 J-STD-020 FMMT415-FMMT417 DS33084 | |
NTE570
Abstract: avalanche ir 032
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NTE570 NTE570 avalanche ir 032 | |
AVALANCHE TRANSISTOR
Abstract: FMMT417 ZTX413 ZTX415 4N7 CAPACITOR FMMT415 DIODE 4N7 disc capacitor 4n7, napoli avalanche transistors
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ZTX413 ZTX413 ZTX413, ZTX415 FMMT415 FMMT417 ED-14, DN24-1 AVALANCHE TRANSISTOR 4N7 CAPACITOR DIODE 4N7 disc capacitor 4n7, napoli avalanche transistors | |
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spark gap
Abstract: "silicon carbide" varistor curve tracer cost selenium diode silicon carbide varistor
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AVALANCHE TRANSISTORContextual Info: Not Recommended for New Design Please Use BAT54C SOT323 NPN SILICON PLANAR AVALANCHE TRANSISTOR ZUMT413 ISSUE 1 – DECEMBER 1998 FEATURES * Avalanche mode operation * 50A Peak avalanche current * Low inductance packaging APPLICATIONS * Laser LED drivers * |
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BAT54C OT323 ZUMT413 20MHz 10KHz AVALANCHE TRANSISTOR | |
a2231
Abstract: laser LED AVALANCHE TRANSISTOR FMMT413 31AA u 413 DSA003693 CCP4 VF130
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FMMT413 VF130V, FMMT413 a2231 laser LED AVALANCHE TRANSISTOR 31AA u 413 DSA003693 CCP4 VF130 | |
epoxy 5000 taitron
Abstract: ARS2535
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ARS2535 MIL-STD-202, epoxy 5000 taitron ARS2535 | |
fuel injector mosfet
Abstract: automotive injector fuel injector driver FET switching with IRFP450 schematic injector MOSFET driver INJECTOR POWER MOSFET CIRCUIT AN-1005 fuel injector test solenoid injector
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AN-1005 fuel injector mosfet automotive injector fuel injector driver FET switching with IRFP450 schematic injector MOSFET driver INJECTOR POWER MOSFET CIRCUIT AN-1005 fuel injector test solenoid injector | |
Contextual Info: AKBPC603 Thru AKBPC606 6 AMP CONTROLLED AVALANCHE SILICON BRIDGE RECTIFIER • FEATURES • Controlled avalanche series with 250V, 450V, 650V and 850V minimum avalanche ratings • Surge overload rating to 125A peak I • Ideal for printed circuit board Outline Drawing |
OCR Scan |
AKBPC603 AKBPC606 E106441 MIL-STD-202, | |
Contextual Info: I BUZ11 BUZ11FI MAGNA N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW GATE CHARGE HIGH CURRENT CAPABILITY 175°C OPERATING TEMPERATURE FOR STANDARD PACKAGE ISOLATED PACKAGE UL RECOGNIZED, |
OCR Scan |
BUZ11 BUZ11FI BUZ11 O-220 ISOWATT220 | |
STK2N50Contextual Info: SGS-THOMSON STK2N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STK2N 50 ' V dss R d s oii Id 500 V 6 Ü 2 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C . APPLICATION ORIENTED CHARACTERIZATION |
OCR Scan |
STK2N50 OT-82 OT-194 STK2N50 | |
05P4417
Abstract: 05P5047
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05P50 05P5017 05P4417 05P5027 05P4427 05P5037 05P4437 05P5047 05P4447 | |
5SDA09P2313Contextual Info: 5SDA 09P23 5SDA 09P23 Old part no. DA 805-850-23 Avalanche Diode Properties § Low forward voltage drop § Avalanche reverse characteristics § Guaranteed maximum avalanche power dissipation § Version with or without lead § Both polarity options § High operational reliability |
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09P23 09P2313 09P2013 09P2323 09P2023 09P2333 09P2033 09P2343 09P2043 5SDA09P2313 |