STW30NM60D
Abstract: JESD97 ZVS phase-shift converters mosfet 600V 100A ST 15A16s W30NM60 W30NM60D 25C312
Text: STW30NM60D N-channel 600V - 0.125Ω - 30A - TO-247 Fast diode MDmesh Power MOSFET General features Type VDSS RDS on ID STW30NM60D 600V < 0.145Ω 30A • High dv/dt and avalanche capabilities ■ 100% avalanche rated ■ Low input capacitance and gate charge
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STW30NM60D
O-247
STW30NM60D
JESD97
ZVS phase-shift converters
mosfet 600V 100A ST
15A16s
W30NM60
W30NM60D
25C312
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W30NM60
Abstract: ZVS phase-shift converters STW30NM60D W30NM60D mosfet 600V 30A JESD97 25C312
Text: STW30NM60D N-channel 600V - 0.125Ω - 30A - TO-247 Fast diode MDmesh Power MOSFET General features Type VDSS RDS on ID STW30NM60D 600V < 0.145Ω 30A • High dv/dt and avalanche capabilities ■ 100% avalanche rated ■ Low input capacitance and gate charge
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STW30NM60D
O-247
W30NM60
ZVS phase-shift converters
STW30NM60D
W30NM60D
mosfet 600V 30A
JESD97
25C312
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STW26NM50FD
Abstract: STW26NM50F 500v ZENER DIODE ZVS phase-shift converters schematic diagram welding device
Text: STW26NM50FD N-CHANNEL 500V - 0.10Ω - 30A TO-247 FDmesh Power MOSFET with FAST DIODE TARGET DATA TYPE STW26NM50FD • ■ ■ ■ ■ VDSS RDS(on) ID 500V <0.12Ω 30 A TYPICAL RDS(on) = 0.10Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED
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STW26NM50FD
O-247
STW26NM50FD
STW26NM50F
500v ZENER DIODE
ZVS phase-shift converters
schematic diagram welding device
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100V 60A Mosfet
Abstract: mosfet 50v 30a LTP60N10
Text: LTP60N10 N-Channel 100V Power MOSFET Features: • Avalanche energy specified • Diode is characterized for use in bridge circuits • Source to Drain diode recovery time comparable to a discrete fast recovery diode. Application • DC to DC converter • For high-frequency switching
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LTP60N10
to175
100V 60A Mosfet
mosfet 50v 30a
LTP60N10
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IXFN64N50PD2
Abstract: 64N50P SOT227B package 64N50
Text: IXFN64N50PD2 IXFN64N50PD3 PolarHVTM HiPerFET Power MOSFET Boost & Buck Configurations Ultra-fast FRED Diode VDSS ID25 RDS(on) trr 3 3 miniBLOC, SOT-227 B E153432 4 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 50A Ω ≤ 85mΩ
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IXFN64N50PD2
IXFN64N50PD3
OT-227
E153432
200ns
64N50P
IXFN64N50PD2
SOT227B package
64N50
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IXFN64N50PD2
Abstract: IXFN64N50PD3
Text: IXFN64N50PD2 IXFN64N50PD3 PolarHVTM HiPerFET Power MOSFETs Boost & Buck Configurations Ultra-fast FRED Diode VDSS ID25 RDS(on) trr 3 3 miniBLOC E153432 4 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 50A 85m 200ns
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IXFN64N50PD2
IXFN64N50PD3
E153432
200ns
IXFN64N50PD2
IXFN64N50PD3
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Untitled
Abstract: No abstract text available
Text: PolarHVTM HiPerFET Power MOSFET VDSS ID25 IXFN64N50PD2 IXFN64N50PD3 RDS on Boost & Buck Configurations (Ultra-fast FRED Diode) trr 3 3 miniBLOC, SOT-227 B E153432 4 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 50A Ω ≤ 85mΩ
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IXFN64N50PD2
IXFN64N50PD3
OT-227
E153432
200ns
64N50P
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Untitled
Abstract: No abstract text available
Text: PD -2604A HFA30PB120 Ultrafast, Soft Recovery Diode HEXFRED TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits Reduced RFI and EMI Reduced Power Loss in Diode and
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-2604A
HFA30PB120
120nC
O-247AC
HFA16PB120
08-Mar-07
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HFA16PB120
Abstract: HFA30PB120 IRFP250
Text: PD -2604A HFA30PB120 Ultrafast, Soft Recovery Diode HEXFRED TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits Reduced RFI and EMI Reduced Power Loss in Diode and
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-2604A
HFA30PB120
120nC
O-247AC
HFA16PB120
12-Mar-07
HFA30PB120
IRFP250
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Irf 1540 G
Abstract: HFA16PB120 HFA30PB120 IRFP250
Text: PD -2604A HFA30PB120 Ultrafast, Soft Recovery Diode HEXFRED TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits Reduced RFI and EMI Reduced Power Loss in Diode and
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-2604A
HFA30PB120
120nC
O-247AC
HFA16PB120
Irf 1540 G
HFA30PB120
IRFP250
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schematic diagram UPS
Abstract: SanRex BKR400AB10 SanRex ups schematic diode schottky 200A diode schottky 400A power supply 100v 30a schematic UPS design BKR400AB10 SCHOTTKY RECTIFIER 400A
Text: SanRex Schottky Barrier Diode BKR400AB10 IO AV = 400A, VRRM=100V, VFM=0.68V SanRex outstanding metal barrier technology allows BKR400AB10 Schottky Barrier Diode Module to feature a very low forward voltage drop. This device also has low leakage current, low thermal resistance and improved avalanche energy
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BKR400AB10
BKR400AB10
O-244
BKR400AB
BKR400AC
schematic diagram UPS
SanRex BKR400AB10
SanRex
ups schematic
diode schottky 200A
diode schottky 400A
power supply 100v 30a schematic
UPS design
SCHOTTKY RECTIFIER 400A
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HFA15PB60
Abstract: IRFP250
Text: PD -2.340 HFA15PB60 HEXFRED Ultrafast, Soft Recovery Diode TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching
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HFA15PB60
HFA15PB60
IRFP250
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HFA30TA60C
Abstract: IRFP250
Text: PD -2.335 HFA30TA60C HEXFRED Ultrafast, Soft Recovery Diode TM Features Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching
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HFA30TA60C
HFA30TA60C
IRFP250
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFK30N110P IXFX30N110P VDSS ID25 = = 1100V 30A Ω 360mΩ 300ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings
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IXFK30N110P
IXFX30N110P
300ns
O-264
30N110P
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXFN30N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = 1200V = 30A ≤ 350mΩ Ω ≤ 300ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions
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IXFN30N120P
300ns
OT-227
E153432
30N120P
1-07-A
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K3060g3
Abstract: B2CB IGBT 600V 16
Text: ISL9K3060G3 FINA L D R A F T [ /Title RURP 3060 /Subject (30A, 600V Ultrafa st Diode) /Autho r () /Keywords (Intersil Corporation, semiconductor, Avalanche Energy Rated, Switch ing Power Supplies, Power Switch ing Circuits, Rectifiers, Soft Data Sheet January 2001
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ISL9K3060G3
ISL9K3060G3
K3060g3
B2CB
IGBT 600V 16
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IXFX30N110P
Abstract: PLUS247 ixfk 30N110P
Text: IXFK30N110P IXFX30N110P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = = 1100V 30A Ω 360mΩ 300ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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IXFK30N110P
IXFX30N110P
300ns
O-264
30N110P
4-01-08-A
IXFX30N110P
PLUS247
ixfk 30N110P
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Z 728
Abstract: No abstract text available
Text: OBSOLETE IXFK30N110P IXFX30N110P PolarTM HiPerFETTM Power MOSFET VDSS ID25 = = 1100V 30A Ω 360mΩ 300ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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IXFK30N110P
IXFX30N110P
O-264
30N110P
4-01-08-A
Z 728
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Untitled
Abstract: No abstract text available
Text: VDSS ID25 IXFN30N120P PolarTM Power MOSFET HiPerFETTM = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 30A Ω 350mΩ 300ns miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXFN30N120P
300ns
OT-227
E153432
30N120P
4-01-08-C
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IXFN30N120P
Abstract: diode 1200v 30A 30N120P
Text: IXFN30N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 30A Ω 350mΩ 300ns miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXFN30N120P
300ns
OT-227
E153432
30N120P
4-01-08-C
IXFN30N120P
diode 1200v 30A
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FFA60UP30DN
Abstract: F109
Text: FFA60UP30DN_F109 UItrafast Recovery Power Rectifier Features Applications • UItrafast with Soft Recovery : < 55ns • General Purpose • High Reverse Voltage, VRRM = 300V • Switching Mode Power Supply • Avalanche Energy Rated • Free-wheeling Diode for Motor Application
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FFA60UP30DN
F109
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXFN30N110P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1100V 25A Ω 360mΩ 300ns miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions
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IXFN30N110P
300ns
OT-227
E153432
30N110P
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ZVS phase-shift converters
Abstract: STW30NM60D W30NM60 W30NM60D
Text: STW30NM60D N-CHANNEL 600V - 0.125Ω - 30A TO-247 Fast Diode MDmesh Power MOSFET ADVANCED DATA TYPE STW30NM60D VDSS RDS on Rds(on)*Qg 600 V < 0.135 Ω 9.12 Ω*nC ID 30 A TYPICAL RDS(on) = 0.125Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY
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STW30NM60D
O-247
STW30NM60D
O-247
ZVS phase-shift converters
W30NM60
W30NM60D
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STW30NM60D
Abstract: 15a diode W30NM60 ZVS phase-shift converters W30NM60D
Text: STW30NM60D N-CHANNEL 600V - 0.125Ω - 30A TO-247 Fast Diode MDmesh MOSFET Table 1: General Features TYPE STW30NM60D • ■ ■ ■ ■ ■ Figure 1: Package VDSS RDS on ID 600V < 0.145Ω 30A TYPICAL RDS(on) = 0.125Ω HIGH dv/dt AND AVALANCHE CAPABILITIES
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STW30NM60D
O-247
O-247
STW30NM60D
15a diode
W30NM60
ZVS phase-shift converters
W30NM60D
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