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    Infineon Technologies AG AUIRF3808S

    MOSFET N-CH 75V 106A D2PAK
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    DigiKey AUIRF3808S Tube
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    International Rectifier AUIRF3808S

    AUTOMOTIVE GRADE HEXFET POWER MOSFET Power Field-Effect Transistor, 106A I(D), 75V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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    ComSIT USA AUIRF3808S 1,900
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    AUIRF3808S Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AUIRF3808S International Rectifier FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 106A D2PAK Original PDF
    AUIRF3808STRL International Rectifier FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 106A D2PAK Original PDF

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    MJ480

    Abstract: AUIRF3808S
    Text: PD - 97698A AUTOMOTIVE GRADE AUIRF3808S HEXFET Power MOSFET Features ● ● ● ● ● ● ● ● ● Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax


    Original     		PDF 7698A AUIRF3808S MJ480 AUIRF3808S

    310A tube

    Abstract: No abstract text available
    Text: PD - 97698 AUTOMOTIVE GRADE AUIRF3808S HEXFET Power MOSFET Features ● ● ● ● ● ● ● ● ● Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax


    Original     		PDF AUIRF3808S 310A tube

    Untitled

    Abstract: No abstract text available
    Text: PD - 97698A AUTOMOTIVE GRADE AUIRF3808S HEXFET Power MOSFET Features ● ● ● ● ● ● ● ● ● Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax


    Original     		PDF 7698A AUIRF3808S