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    ATF107 Price and Stock

    Hewlett Packard Co ATF-10736-TR1

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    Quest Components ATF-10736-TR1 2,900
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    Hewlett Packard Co ATF-10736

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ATF-10736 128
    • 1 $15
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    • 100 $9.25
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    ATF-10736 8
    • 1 $13.5
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    ATF-10736 1
    • 1 $86.234
    • 10 $86.234
    • 100 $86.234
    • 1000 $86.234
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    Agilent Technologies Inc ATF10736TR1

    Electronic Component
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    ComSIT USA ATF10736TR1 1,951
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    Hewlett Packard Co ATF10736

    Electronic Component
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA ATF10736 294
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    ATF107 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ATF10735 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    ATF10736 Agilent Technologies 0.5-12 GHz General Purpose Gallium Arsenide FET Original PDF
    ATF-10736 Agilent Technologies 0.5-12 GHz General Purpose Gallium Arsenide FET Original PDF
    ATF-10736-STR Agilent Technologies 0.5-12 GHz General Purpose Gallium Arsenide FET Original PDF
    ATF-10736-STR Agilent Technologies 0.5-12 GHz General Purpose Gallium Arsenide FET Original PDF
    ATF10736-STR Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    ATF-10736-TR1 Agilent Technologies 0.5-12 GHz General Purpose Gallium Arsenide FET Original PDF
    ATF-10736-TR1 Agilent Technologies 0.5-12 GHz General Purpose Gallium Arsenide FET Original PDF
    ATF10736-TR1 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    ATF-10736-TRI Agilent Technologies 0.5-12 GHz General Purpose Gallium Arsenide FET Original PDF

    ATF107 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    GHZ micro-X ceramic Package

    Abstract: ATF-10736 ATF-10736-STR ATF-10736-TR1 10736
    Text: 0.5 – 12 GHz General Purpose Gallium Arsenide FET Technical Data ATF-10736 36 micro-X Package Features Description • High Associated Gain: 13.0 dB Typical at 4 GHz The ATF-10736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor


    Original     		ATF-10736 ATF-10736 5965-8698E GHZ micro-X ceramic Package ATF-10736-STR ATF-10736-TR1 10736 PDF

    GHZ micro-X Package

    Abstract: micro-x ATF-10136 atf 26836 ATF-25570 ATF-10236 ATF-25735 ATF-26884 ATF-13736 ATF-10100
    Text: Low Noise MESFETs Typical Specifications @ 25°C Case Temperature Gate Width (mm) Optimum Frequency Range (GHz) Test Frequency (GHz) Vdd NFo Ga P1 dB [1] (V) (dB) (dB) (dBm) ATF-13100 250 2 - 18 12 2.5 1.1 9.5 ATF-13336 250 2 - 16 12 2.5 1.4 ATF-13736 250


    Original     		ATF-13100 ATF-13336 ATF-13736 ATF-13786 ATF-26836 ATF-26884 ATF-10236 ATF-10736 ATF-25170 ATF-25570 GHZ micro-X Package micro-x ATF-10136 atf 26836 ATF-25570 ATF-10236 ATF-25735 ATF-26884 ATF-13736 ATF-10100 PDF

    ATF-10736

    Abstract: ATF-10736-STR ATF-10736-TR1 ATF10
    Text: 0.5 – 12 GHz General Purpose Gallium Arsenide FET Technical Data ATF-10736 Features Description • High Associated Gain: 13.0␣ dB Typical at 4␣ GHz The ATF-10736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective


    Original     		ATF-10736 ATF-10736 ATF-10736-STR ATF-10736-TR1 ATF10 PDF

    7804 regulator

    Abstract: AFT-10136 S parameters for ATF 10136 AN-A002 low noise design ATF 10136 ATF10236 AFT-10236 7804 voltage regulator MSF8885
    Text: 4 GHz Television Receive Only LNB Design Application Note A007 NOTE: This publication is a reprint of a previously published Application Note and is for technical reference only. For more current information, see the following publications: • AN1091, 1 and 2 Stage 10.7 to 12.7 GHz Amplifiers Using the


    Original     		AN1091, ATF-36163 5965-1235E. AN1136, 5966-2488E. AN1139, INA-51063 AN-A001: AN-S005: 5091-8825E 7804 regulator AFT-10136 S parameters for ATF 10136 AN-A002 low noise design ATF 10136 ATF10236 AFT-10236 7804 voltage regulator MSF8885 PDF

    laser diode spice modeling

    Abstract: laser diode spice model simulation spice ATF 10136 atf-10136 spice MSA-09 ATF13136 mmic a20 MSA-0311 AT-41500 S parameters for ATF 10136
    Text: Application Design Tools Services and Applications Literature Hewlett-Packard customers are supported by an Applications Engineering Department. The applications engineering staff investigates circuit applications, design techniques, and device performance. The results of these


    Original     		42E-13 04E-1 53E-13 5E-12 87E-2 1E-14) INA-12 900MHz 900E6) laser diode spice modeling laser diode spice model simulation spice ATF 10136 atf-10136 spice MSA-09 ATF13136 mmic a20 MSA-0311 AT-41500 S parameters for ATF 10136 PDF

    atf-41435

    Abstract: 99250 schematic diagram receiver data circuit satellite ATF-10235 5091-8823E
    Text: Design of a 4 GHz LNA for a TVRO System Application Note A002 Introduction With the advent of low cost GaAs FETs, the consumer home entered a new phase in communications: the era of satellite television reception. A typical Television Receive Only TVRO system for this market is


    Original     		5091-8823E 5968-3244E atf-41435 99250 schematic diagram receiver data circuit satellite ATF-10235 PDF

    IAM-81008

    Abstract: 5082-2830 HSMP-3895 5082-3043 ina-02170 INA-01170 30533 5082-0012 5082-2970 HSMP 2800
    Text: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101


    Original     		1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 IAM-81008 5082-2830 HSMP-3895 5082-3043 ina-02170 INA-01170 30533 5082-0012 5082-2970 HSMP 2800 PDF

    ATF10236

    Abstract: FET K 2611 TRANSISTOR BD 137-10 AGILENT 9988 microstripline ATF-10136 transistor equivalent 2274 table chart ATF-10736 HP346A MSA-0686
    Text: Using the ATF-10236 in Low Noise Amplifier Applications in the UHF Through 1.7 GHz Frequency Range Application Note 1076 Introduction GaAs FET devices are typically used in low-noise amplifiers in the microwave frequency region where silicon transistors can’t


    Original     		ATF-10236 frequen058 5963-3780E 5966-0166E ATF10236 FET K 2611 TRANSISTOR BD 137-10 AGILENT 9988 microstripline ATF-10136 transistor equivalent 2274 table chart ATF-10736 HP346A MSA-0686 PDF

    5082-2830

    Abstract: IAM-81008 HSMP-3895 hsms-2850 5082-0012 8205 datasheet hsms-285b HSMS-285C HSMS-2862 MSA-0870
    Text: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101


    Original     		1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 5082-2830 IAM-81008 HSMP-3895 hsms-2850 5082-0012 8205 datasheet hsms-285b HSMS-285C HSMS-2862 MSA-0870 PDF

    GHZ micro-X Package

    Abstract: ATF-36163 Field Effect Transistors ATF-26884 atf 26836 ATF-10100 ATF-10136 ATF-13100 ATF-13336 ATF-13736
    Text: Gallium Arsenide Field Effect Transistors Selection Guide NFo and Ga are specified at a low noise bias point, while P1 dB and G1 dB are specified at bias points which optimize these parameters. Low Noise PHEMTs Typical Specifications @ 25°C Case Temperature


    Original     		ATF-36077 ATF-36163 OT-363 SC-70) ATF-44101 ATF-45101 ATF-45171 ATF-46101 ATF-46171 GHZ micro-X Package ATF-36163 Field Effect Transistors ATF-26884 atf 26836 ATF-10100 ATF-10136 ATF-13100 ATF-13336 ATF-13736 PDF

    GHZ micro-X Package

    Abstract: Hewlett-Packard MICRO-X S parameters for ATF 10136 micro-x 200 mil BeO package AT-32032 ATF-13336 ATF-13786 at42010 ATF-10136
    Text: Transistor Selection Guide Silicon Bipolar Transistors NFo and Ga are specified at a low noise bias point, while P 1 dB, G1 dB, and |S 21E|2 are specified at bias points which optimize these parameters. Low Noise Transistors Typical Specifications @ 25°C Case Temperature


    Original     		AT-30511 OT-143 OT-23 AT-30533 AT-31011 AT-31033 ATF-45101 ATF-45171 ATF-46101 GHZ micro-X Package Hewlett-Packard MICRO-X S parameters for ATF 10136 micro-x 200 mil BeO package AT-32032 ATF-13336 ATF-13786 at42010 ATF-10136 PDF

    Untitled

    Abstract: No abstract text available
    Text: 0.5 – 12 GHz General Purpose Gallium Arsenide FET Technical Data ATF-10736 36 micro-X Package Features Description • High Associated Gain: 13.0 dB Typical at 4 GHz The ATF-10736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor


    Original     		ATF-10736 ATF-10736 5965-8698E PDF

    ATF-10736

    Abstract: AN-G005 ATF10236 ATF-10236 ATF10136 ATF-10136 HP346A MSA-0686 TK11650U TL05
    Text: Using the ATF-10236 in Low Noise Amplifier Applications in␣ the UHF through 1.7 GHz Frequency Range Application Note 1076 Introduction GaAs FET devices are typically used in low-noise amplifiers in the microwave frequency region where silicon transistors can’t


    Original     		ATF-10236 ATF-10736 AN-G005 ATF10236 ATF10136 ATF-10136 HP346A MSA-0686 TK11650U TL05 PDF

    ATF SOT

    Abstract: ATF-26884 ATF-34143 ATF-44101 ATF10236 ATF-21186 ATF-10136
    Text: Gallium Arsenide Field Effect Transistors Selection Guide NFo and Ga are specified at a low noise bias point, while P1 dB and G1 dB are specified at bias points which optimize these parameters. Low Noise PHEMTs Typical Specifications @ 25°C Case Temperature


    Original     		OT-363 SC-70) OT-343 ATF-36077 ATF-36163 ATF-34143 ATF-13336 ATF-13736 ATF-13786 ATF SOT ATF-26884 ATF-34143 ATF-44101 ATF10236 ATF-21186 ATF-10136 PDF

    2.4 ghz FM TRANSMITTER CIRCUIT DIAGRAM

    Abstract: 8 pin IC 34063 44xx INA-10386 HP RF TRANSISTOR GUIDE ATF 26886 2.4 ghz video TRANSMITTER CIRCUIT DIAGRAM Rf detector HSMS 8202 ina series 305xx
    Text: guide HP Wireless Communications Products, Markets Part-to-Market Quick Guide, Version 4.0 Table of Contents Abbreviations of Wireless Terms . i Receivers, Transmitters Receivers . 1


    Original     		5965-7732E 5968-2348E 2.4 ghz FM TRANSMITTER CIRCUIT DIAGRAM 8 pin IC 34063 44xx INA-10386 HP RF TRANSISTOR GUIDE ATF 26886 2.4 ghz video TRANSMITTER CIRCUIT DIAGRAM Rf detector HSMS 8202 ina series 305xx PDF

    atf-41435

    Abstract: schematic diagram receiver satellite S2PB schematic diagram receiver data circuit satellite ATF-10235 AN-A002 tvro system in low power transmitter 2N2907 PNP Transistor to 92 2N2907 ATF10236
    Text: Design of a 4 GHz LNA for a TVRO System Application Note AN A002 Introduction With the advent of low cost GaAs FETs, the consumer home entered a new phase in communications: the era of satellite television reception. A typical Television Receive Only TVRO system for this market is shown in


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: What mLliM HEWLETT* PACKARD 0.5-12 GHz General Purpose Gallium Arsenide FET Technical Data ATF-10736 Features • High Associated Gain: 13.0 dB Typical at 4 GHz • Low Bias: VDS = 2V,IDS=25 mA • High Output Power: 20.0 dBm typical PldB at 4 GHz • Low Noise Figure:


    OCR Scan     		ATF-10736 ATF-10736isa PDF

    Untitled

    Abstract: No abstract text available
    Text: What HEWLETT* mLliM PACKARD 0.5-12 GHz General Purpose Gallium Arsenide FET Technical Data ATF-10736 F e atu res D escription • High A ssociated Gain: 13.0 dB Typical at 4 GHz The ATF-10736isa high perfor­ mance gallium arsenide Schottkybarrier-gate field effect transistor


    OCR Scan     		ATF-10736 ATF-10736isa PDF

    HRMA-0470B

    Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
    Text: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic


    OCR Scan     		E-28230 S-164 CH-8902 HRMA-0470B Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61 PDF

    ATF-10735

    Abstract: ATF-20135 ATF20135
    Text: AVANTEK INC Ot.E D J A A V A N T E IC •E l\ U M lU h DDGSTbfl 1 | ATF-20135 ATF-10735 2-12 GHz General Purpose Gallium Arsenide FET T-31-25 Avantek micro-X Package Features .085 • High Associated Gain 12.5 dB typical at 4 GHz • Low Bias Vd s =2V, lDs =20 mA


    OCR Scan     		ATF-20135 ATF-10735) T-31-25 ATF-20135 ATF-10735 ATF20135 PDF

    Avantek S

    Abstract: AVANTEK transistor ATF-20136
    Text: AVANTEK 50E D INC 0AVANTEK • lmiTbb 0 0 0 b S 3 cl S ATF-10736 ATF-20136 0.5-12 GHz General Purpose Gallium Arsenide FET Avantek 36 micro-X Package1 Features • High Associated Gain: 12.5 dB typical at 4 GHz • Low Bias: V d s = 2 V , I d s = 20 mA • High Output Power: 20.0 dBm typical Pi dB


    OCR Scan     		000bS3c ATF-10736 ATF-20136) ATF-10736 371-8717or Avantek S AVANTEK transistor ATF-20136 PDF

    Untitled

    Abstract: No abstract text available
    Text: What H E W L E T T ATF-10736 ATF-20136 0.5-12 GHz General Purpose Gallium Arsenide FET mL'EM P A C K A R D Features • • • • • • 36 micro-X Package1 High Associated Gain: 12.5 dB typical at 4 GHz Low Bias: V d s = 2 V , Id s = 20 mA High Output Power: 20.0 dBm typical Pi ob


    OCR Scan     		ATF-10736 ATF-20136) ATF-10736 operati76 PDF

    REGULATOR IC 7804

    Abstract: AN-A007 AVANTEK MSA-0885 7804 regulator AVANTEK AN-A001 AN-A002 Avantek a08 S parameters for ATF 10136 Avantek aft avantek
    Text: M HEW LETT AN-A007: PACKARD 4 g h z Television Receive Only LNB Design Introduction This note describes the design of a modern LNB low noise block converter for the C band (3.7-4.2 GHz) TVRO market. The block converter consists of a low noise amplifier (LNA), a


    OCR Scan     		AN-A007: ATF-10236 ATF-10736 AN-A001: AN-S005: 5091-8825E REGULATOR IC 7804 AN-A007 AVANTEK MSA-0885 7804 regulator AVANTEK AN-A001 AN-A002 Avantek a08 S parameters for ATF 10136 Avantek aft avantek PDF

    ATF-35176

    Abstract: ATF-3507 ATF-35076 ATF-21170 ATF-44100 ATF26550 ATF-13036 ATF-10170 ATF-35576 ATF-35376
    Text: Gallium Arsenide GaAs Field Effect Transistors (FETs) Low Noise GaAs FETs (Typical Specifications at +25°C Case Temperature) Part Number Gate Width Optimum Freq. Range (GHz) Test Freq. (GHz) NF. (dB) (dB) PldB (dBm) 0.5-12 2-18 0.5-6 0.5-10 4 12 4 4 0.5


    OCR Scan     		ATF-10100 ATF-13100 ATF-21100 ATF-25100 ATF-10170 ATF-13170 ATF-21170 ATF-25170 ATF-10136 ATF-10236 ATF-35176 ATF-3507 ATF-35076 ATF-44100 ATF26550 ATF-13036 ATF-35576 ATF-35376 PDF