ATF 26836 Search Results

ATF-26836

Abstract: ATF-26836-STR ATF-26836-TR1 gaas fet micro-X Package
Contextual Info: 2 – 16 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26836 Features Description • High Output Power: 18.0␣ dBm Typical P 1 dB at 12␣ GHz The ATF-26836 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor

Contextual Info: 2 – 16 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26836 36 micro-X Package Features Description • High Output Power: 18.0 dBm Typical P1 dB at 12 GHz The ATF-26836 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor

gaas fet micro-X Package

Abstract: ATF-26836 ATF-26836-STR ATF-26836-TR1 oscillator 77 GHZ atf26836tr1 ATF26836-STR
Contextual Info: 2 – 16 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26836 36 micro-X Package Features Description • High Output Power: 18.0 dBm Typical P1 dB at 12 GHz The ATF-26836 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor

Contextual Info: What HEWLETT* mLliM PACKARD 2-1 6 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26836 F e atu res D escription • High Output Pow er: 18.0 dBm Typical Pi ¿s at 12 GHz The ATF-26836 is a high perfor­ mance gallium arsenide Schottkybarrier-gate field effect transistor

F2683

Contextual Info: That HEWLETT mi/LMPACKARD 2-16 GHz General Purpose Gallium Arsenide FET Technical Data A TF-26836 F e a tu r e s D escrip tio n • High Output Power: 18.0 dBm Typical Pj dB at 12 GHz The ATF-26836 is a high perfor­ mance gallium arsenide Schottkybarrier-gate field effect transistor

gaas fet micro-X Package

Abstract: ATF-26836 ATF-26836-STR ATF-26836-TR1 GaAs FET Micro-X AVANTEK transistor AVANTEK oscillator
Contextual Info: .AVANTEK I N C SDE D 0AV ANTE K 114nbh Q00b503 a ATF-26836 2-16 GHz General Purpose Gallium Arsenide FET 'T-3I-X5 Features • • • • • Avantek 36 micro-X Package1 High fMAx: 60 GHz typical High Output Power: 18.0 dBm typical Pi dB at 12 GHz High Gain: 9.0 dB typical Gss at 12 GHz

Contextual Info: ATF-26836 2-16 GHz General Purpose Gallium Arsenide FET Wtinl H E W L E T T W!kM P A C K A R D 36 micro-X Package1 Features High îm a x : 60 GHz typical High Output Power: 18.0 dBm typical Pi <jb at 12 GHz High Gain: 9.0 dB typical Gss at 12 GHz Cost Effective Ceramic Microstrip Package

AVANTEK transistor

Contextual Info: .AVANTEK EGE INC D 0AYANTEK U 4 1 U h 0 D Q t iS f l 3 a ATF-26836 2-16 GHz General Purpose Gallium Arsenide FET 'T-3I-X5 Features Avantek 36 micro-X Package1 • High fMAx: 60 GHz typical • High Output Power: 18.0 dBm typical Pi dB at 12 GHz • High Gain: 9.0 dB typical Gss at 12 GHz

sgm 8905

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Contextual Info: December 19, 2000 Preface to the 13th Edition The Harmonized Tariff Schedule of the United States, Annotated for Statistical Reporting Purposes HTS 2001 is being published pursuant to section 1207 of the Omnibus Trade and Competitiveness Act of 1988 (P.L.