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    ATC700 Search Results

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    ATC700 Price and Stock

    Kyocera AVX Components ATC700B560GMS500X

    Silicon RF Capacitors / Thin Film
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics ATC700B560GMS500X 274
    • 1 $8.51
    • 10 $7.38
    • 100 $5.74
    • 1000 $4.82
    • 10000 $4.82
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    congatec AG conga-TC700/HSP-HP-B

    Heat Sinks Standard heatspreader for high performance COM Express module conga-TC700 with integrated heat pipes, 11mm height. All standoffs are with 2.7mm bore hole.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics conga-TC700/HSP-HP-B
    • 1 $39.89
    • 10 $38.4
    • 100 $37.5
    • 1000 $37.5
    • 10000 $37.5
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    congatec AG conga-TC700/HSP-HP-T

    Heat Sinks Standard heatspreader for high performance COM Express module conga-TC700 with integrated heat pipes, 11mm height. All standoffs are M2.5mm threaded.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics conga-TC700/HSP-HP-T
    • 1 $39.89
    • 10 $38.4
    • 100 $37.5
    • 1000 $37.5
    • 10000 $37.5
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    congatec AG conga-TC700/CSP-HP-B

    CPU & Chip Coolers Standard passive cooling solution for high performance COM Express module conga-TC700 with integrated heat pipes, 24.7mm height. All standoffs are with 2.7mm bore hole.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics conga-TC700/CSP-HP-B
    • 1 $47.87
    • 10 $46.08
    • 100 $45
    • 1000 $45
    • 10000 $45
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    congatec AG conga-TC700/CSP-HP-T

    CPU & Chip Coolers Standard passive cooling solution for high performance COM Express module conga-TC700 with integrated heat pipes, 24.7mm height. All standoffs are M2.5mm threaded.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics conga-TC700/CSP-HP-T
    • 1 $47.87
    • 10 $46.08
    • 100 $45
    • 1000 $45
    • 10000 $45
    		Get Quote
    Find more ATC700 price and stock on Findchips.com

    ATC700 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ATC700A4R7BT150XT American Technical Ceramics CER CAP Original PDF
    ATC700A4R7BT150XT American Technical Ceramics CER CAP Original PDF
    ATC700Bxxx American Technical Ceramics NPO Porcelain and Ceramic Multilayer Capacitors Scan PDF

    ATC700 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    McMaster-Carr

    Abstract: m174 92196a ATC200B marking h5 92196A1 91252 5050-0037
    Text: SD3933 HF/VHF/UHF RF power N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF


    Original     		SD3933 2002/95/EEC SD3933 McMaster-Carr m174 92196a ATC200B marking h5 92196A1 91252 5050-0037 PDF

    balun 50 ohm

    Abstract: 10k trimpot mrf154 amplifier wl gore 1N4148 1N5362 2204B MRF154 VRF154FL trifilar
    Text: VRF154FL 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.


    Original     		VRF154FL 80MHz VRF154FL 100MHz 30MHz, MRF154 balun 50 ohm 10k trimpot mrf154 amplifier wl gore 1N4148 1N5362 2204B MRF154 trifilar PDF

    "27 mhz" amp

    Abstract: arf15beo 700B ARF1500 ARF1501
    Text: S D ARF1501 S D ARF1501 BeO RF POWER MOSFET 1525-xx G S S G S N - CHANNEL ENHANCEMENT MODE 250V 750W 40MHz The ARF1501 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.


    Original     		ARF1501 1525-xx 40MHz ARF1501 ARF1500 75-380pF "27 mhz" amp arf15beo 700B ARF1500 PDF

    G2225X7R225KT3AB

    Abstract: MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.


    Original     		MRF6VP2600H MRF6VP2600HR6 G2225X7R225KT3AB MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6 PDF

    L-Band 1200-1400 MHz

    Abstract: ATC100B390 CR1206-8W ATC100B101 ATC100B910
    Text: STAC1214-250 LDMOS L-band radar transistor Datasheet — preliminary data Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 250 W with 14 dB gain over 1200 1400 MHz ■ ST air cavity / STAC package Description


    Original     		STAC1214-250 STAC1214-250 STAC265B L-Band 1200-1400 MHz ATC100B390 CR1206-8W ATC100B101 ATC100B910 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V13250H Rev. 1, 7/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V13250HR3 MRF6V13250HSR3 RF Power transistors designed for CW and pulsed applications operating at


    Original     		MRF6V13250H MRF6V13250HR3 MRF6V13250HSR3 MRF6V13250HR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9125N Rev. 5, 8/2008 MRF6S9125NR1/NBR1 replaced by MRFE6S9125NR1/NBR1. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistors MRF6S9125NR1 MRF6S9125NBR1 Designed for broadband commercial and industrial applications with


    Original     		MRF6S9125N MRF6S9125NR1/NBR1 MRFE6S9125NR1/NBR1. PCN12895 MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125NR1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9060N Rev. 4, 8/2008 MRF6S9060NR1 replaced by MRFE6S9060NR1. Refer to Device Migration PCN12895 for more details. MRF6S9060NBR1 no longer manufactured. RF Power Field Effect Transistors MRF6S9060NR1


    Original     		MRF6S9060N MRF6S9060NR1 MRFE6S9060NR1. PCN12895 MRF6S9060NBR1 MRF6S9060NR1 MRF6S9060NBR1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9060N Rev. 1, 10/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6S9060NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		MRFE6S9060N MRFE6S9060NR1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S18140H Rev. 1.1, 12/2009 RF Power Field Effect Transistors MRF6S18140HR3 MRF6S18140HSR3 Designed for N-CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-


    Original     		MRF6S18140H MRF6S18140HR3 MRF6S18140HSR3 IS-95 MRF6S18140HR3 PDF

    C4532X5R1H475MT

    Abstract: ATC100B0R5BT500XT C4532X5R1H TRANSISTORS J427 MRF6S18100N
    Text: Document Number: MRF6S18100N Rev. 2, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S18100NR1 MRF6S18100NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier


    Original     		MRF6S18100N MRF6S18100NR1 MRF6S18100NBR1 C4532X5R1H475MT ATC100B0R5BT500XT C4532X5R1H TRANSISTORS J427 PDF

    Untitled

    Abstract: No abstract text available
    Text: VRF154FL VRF154FLMP 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.


    Original     		VRF154FL VRF154FLMP 80MHz VRF154FL 100MHz 30MHz, MRF154 PDF

    RF TRANSFORMER, PIN THRU MOUNT, 2-30 MHz

    Abstract: MARCON NH capacitor marcon capacitor nc inductor vk200 Variable resistor 10K ohm resistor 4.7k ohm neosid* 10k RG316 coaxial cable rs-2b resistor 8 pin SURFACE MOUNT RESISTOR
    Text: SD2932  RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs PRELIMINARY DATA ν ν ν ν GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH-PULL POUT = 300W MIN. WITH 15 dB GAIN @175 MHz DESCRIPTION The SD2932 is a gold metallized N-Channel MOS


    Original     		SD2932 SD2932 TSD2932 RF TRANSFORMER, PIN THRU MOUNT, 2-30 MHz MARCON NH capacitor marcon capacitor nc inductor vk200 Variable resistor 10K ohm resistor 4.7k ohm neosid* 10k RG316 coaxial cable rs-2b resistor 8 pin SURFACE MOUNT RESISTOR PDF

    Multilayer Capacitors

    Abstract: A/GAL -700E -4 and/GAL -700E -1
    Text: ATC 700 E Series NPO Porcelain High RF Power Multilayer Capacitors • Case E Size .380" x .380" • Capacitance Range 1 pF to 2200 pF • High Q • Ultra-Stable NPO Performance • Low ESR/ESL • High RF Current/Voltage • High RF Power • High Reliability


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ATC 700 B Series NPO Porcelain and Ceramic Multilayer Capacitors • Case B Size .110" x .110" • Capacitance Range 0.1 pF to 5100 pF • Low ESR/ESL • Zero TCC • Low Noise • High Self-Resonance • Rugged Construction • Established Reliability (QPL)


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ATC 700 C Series NPO Porcelain High RF Power Multilayer Capacitors • Case C Size .250" x .250" • Capacitance Range 1 pF to 2700 pF • High Q • Ultra-Stable Performance • Low ESR/ESL • High RF Current/Voltage • High RF Power • High Reliability


    Original     		PDF

    723 voltage regulator

    Abstract: IN5357 1kw mosfet arco mica trimmer PPR planar power arco capacitors 262 2204B MRF157 VRF157FL RL1009-5820-97-D1
    Text: VRF157FL 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.


    Original     		VRF157FL 80MHz VRF157FL 30MHz, MRF157 723 voltage regulator IN5357 1kw mosfet arco mica trimmer PPR planar power arco capacitors 262 2204B MRF157 RL1009-5820-97-D1 PDF

    Resistor mttf

    Abstract: MRF6S9060NBR1 MRF6S9060NR1 MRFE6S9060NR1 A114 A115 C101 JESD22 MRF6S9060N
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9060N Rev. 4, 8/2008 MRF6S9060NR1 replaced by MRFE6S9060NR1. Refer to Device Migration PCN12895 for more details. MRF6S9060NBR1 no longer manufactured. RF Power Field Effect Transistors ARCHIVE INFORMATION


    Original     		MRF6S9060N MRF6S9060NR1 MRFE6S9060NR1. PCN12895 MRF6S9060NBR1 MRF6S9060NBR1 Resistor mttf MRFE6S9060NR1 A114 A115 C101 JESD22 MRF6S9060N PDF

    465B

    Abstract: A114 A115 AN1955 JESD22 MRF6S18140HR3 MRF6S18140HSR3 Nippon capacitors Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S18140H Rev. 1, 12/2008 N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18140HR3 MRF6S18140HSR3 LIFETIME BUY Designed for N - CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		MRF6S18140H MRF6S18140HR3 MRF6S18140HSR3 MRF6S18140HR3 465B A114 A115 AN1955 JESD22 MRF6S18140HSR3 Nippon capacitors Nippon chemi PDF

    Untitled

    Abstract: No abstract text available
    Text: ATC 700 A Series NPO Porcelain and Ceramic Multilayer Capacitors • Case A Size .055" x .055" • Capacitance Range 0.1 pF to 1000 pF • Low ESR/ESL • Zero TCC • Low Noise • High Self-Resonance • Rugged Construction • Established Reliability (QPL)


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ATC 700 C Series NPO Porcelain High RF Power Multilayer Capacitors • Case C Size .250" x .250" • Capacitance Range 1 pF to 2700 pF • High Q • Ultra-Stable Performance • Low ESR/ESL • High RF Current/Voltage • High RF Power • High Reliability


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMRF1315N Rev. 0, 7/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1315NR1 Designed for wideband defense, industrial and commercial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		MMRF1315N MMRF1315NR1 IS--95 7/2014Semiconductor, PDF

    MHVIC910HR2

    Abstract: MW6S010NR1 CRCW12061001FKEA ATC700A331JT150XT 1265A ATC700a FREESCALE PACKING A113 A114 AN1955
    Text: Freescale Semiconductor Technical Data Document Number: MW6S010N Rev. 5, 6/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier


    Original     		MW6S010N MW6S010NR1 MW6S010GNR1 MHVIC910HR2 CRCW12061001FKEA ATC700A331JT150XT 1265A ATC700a FREESCALE PACKING A113 A114 AN1955 PDF

    Untitled

    Abstract: No abstract text available
    Text: SD2900 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs . . . . . . . GOLD METALLIZATION 2 - 5 0 0 MHz 5 WATTS 28 VOLTS 13.5 dB MIN. AT 400 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY DESCRIPTION The SD2900 is a gold metallized N-Channel MOS


    OCR Scan     		SD2900 SD2900 1021498C 1010936C PDF