ATC600F5R6CT Search Results

ATC600F5R6CT Price and Stock

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American Technical Ceramics Corp ATC600F5R6CT250XT CERAMIC CAPACITOR, MULTILAYER, CERAMIC, 250V, 4.4643% +TOL, 4.4643% -TOL, C0G, 30PPM/CEL TC, 0.0000056UF, SURFACE MOUNT, 0805
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	ATC600F5R6CT250XT		624			1 $2 10 $2 100 $0.6 1000 $0.52 10000 $0.52	Buy Now
Kyocera AVX Components 600F5R6CT250XTV Silicon RF Capacitors / Thin Film 250V 5.6pF Tol 0.25pF Las Mkg Vertical
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	600F5R6CT250XTV	Reel			500	1 - 10 - 100 - 1000 $0.462 10000 $0.462	Buy Now

ATC600F5R6CT Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
PIMD3 Abstract: No abstract text available Text: NPT35050A Gallium Nitride 28V, 65W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from 3300 – 3800 MHz • 90W P3dB PEP power • 65W P3dB CW power	Original	NPT35050A 3A001b 750mA, NDS-003 PIMD3	PDF
Untitled Abstract: No abstract text available Text: NPTB00050 Not recommended for new designs Contact applications@nitronex.com for questions or support Gallium Nitride 28V, 50W RF Power Transistor Not Recommended for New Designs FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power	Original	NPTB00050designs 4000MHz 500-1000MHz 3A982 450mA, 3000MHz, NPTB00050 NDS-007	PDF
NPTB00025 Abstract: NPTB00025B AC200BM-F2 AC200B EAR99 JESD22-A114 JESD22-A115 UPW1C151MED ATC600F1R2AT Text: NPTB00025 Datasheet Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 25W P3dB CW narrowband power • 10W P3dB CW broadband power from 500-1000MHz	Original	NPTB00025 4000MHz 500-1000MHz EAR99 225mA, 3000MHz, NDS-006 NPTB00025B AC200BM-F2 AC200B JESD22-A114 JESD22-A115 UPW1C151MED ATC600F1R2AT	PDF
PIMD3 Abstract: No abstract text available Text: NPT35050A Gallium Nitride 28V, 65W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from 3300 – 3800 MHz • 90W P3dB PEP power • 65W P3dB CW power	Original	NPT35050A 3A001b 750mA, NPT35050A NDS-003 PIMD3	PDF
RF35 board 30mil Abstract: LT1964-BYP nichicon pw NPT35050A 20k ohm potentiometer Nichicon se Theta-J EAR99 JESD22-A114 JESD22-A115 Text: NPT35050A Datasheet Gallium Nitride 28V, 50W High Electron Mobility Transistor NPT35050A Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Si technology. FEATURES • Designed for 3.3-3.8 GHz WiMAX applications. • Typical OFDM performance at VDD = 28 Volts, IDQ =	Original	NPT35050A NPT35050A 64-QAM RF35 board 30mil LT1964-BYP nichicon pw 20k ohm potentiometer Nichicon se Theta-J EAR99 JESD22-A114 JESD22-A115	PDF
Untitled Abstract: No abstract text available Text: NPTB00025 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 25W P3dB CW narrowband power • 10W P3dB CW broadband power from 500-1000MHz	Original	NPTB00025 4000MHz 500-1000MHz EAR99 225mA, 3000MHz, NDS-006	PDF
NPTB00050 Abstract: NPTB00050B Gan on silicon substrate EAR99 ELXY ELXY630ELL271MK25S 12061C103KAT2A nds 40 JESD22-A114 JESD22-A115 Text: NPTB00050 Datasheet Gallium Nitride 28V, 50W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power • 25W P3dB CW broadband power from	Original	NPTB00050 4000MHz 500-1000MHz EAR99 450mA, 3000MHz, NDS-007 NPTB00050B Gan on silicon substrate ELXY ELXY630ELL271MK25S 12061C103KAT2A nds 40 JESD22-A114 JESD22-A115	PDF
PIMD3 Abstract: No abstract text available Text: NPT35050A Gallium Nitride 28V, 65W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from 3300 – 3800 MHz • 90W P3dB PEP power • 65W P3dB CW power	Original	NPT35050A 3A001b 750mA, NDS-003 PIMD3	PDF
NPTB00050B Abstract: No abstract text available Text: NPTB00050 Not recommended for new designs Contact applications@nitronex.com for questions or support Gallium Nitride 28V, 50W RF Power Transistor Not Recommended for New Designs FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power	Original	NPTB00050designs 4000MHz 500-1000MHz 3A982 450mA, 3000MHz, NPTB00050 NDS-007 NPTB00050B	PDF
Untitled Abstract: No abstract text available Text: NPTB00025 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 25W P3dB CW narrowband power • 10W P3dB CW broadband power from 500-1000MHz	Original	NPTB00025 4000MHz 500-1000MHz EAR99 225mA, 3000MHz, NDS-006	PDF