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Kyocera AVX Components 600F470JT250XT Silicon RF Capacitors / Thin Film 250volts 47pF 5% NP0
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ATC600F470JT250XT Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
j327 Abstract: j327 transistor AFT09S282 transistor j326 J161 mosfet transistor j334 AFT09S282NR3 ATC600F4R7BT250XT AFT09S282N Text: Freescale Semiconductor Technical Data Document Number: AFT09S282N Rev. 0, 10/2012 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET AFT09S282NR3 This 80 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz.	Original	AFT09S282N AFT09S282NR3 AFT09S282N j327 j327 transistor AFT09S282 transistor j326 J161 mosfet transistor j334 AFT09S282NR3 ATC600F4R7BT250XT	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 6/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT05MS031NR1 AFT05MS031GNR1 Designed for mobile two-way radio applications with frequencies from	Original	AFT05MS031N AFT05MS031NR1 AFT05MS031GNR1 AFT05MS031NR1	PDF
atc 17-25 Abstract: AFT05MS031NR1 atc0805wl ATC600F241JT GRM21BR72A103KA01B J027 Text: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and wideband performance of	Original	AFT05MS031N AFT05MS031NR1 AFT05MS031GNR1 52ogo, atc 17-25 atc0805wl ATC600F241JT GRM21BR72A103KA01B J027	PDF
Untitled Abstract: No abstract text available Text: Document Number: MMRF1021N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this	Original	MMRF1021N MMRF1021NT1	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: AFT09S282N Rev. 0, 10/2012 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET AFT09S282NR3 This 80 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz.	Original	AFT09S282N AFT09S282NR3	PDF
MW7IC930N Abstract: J492 atc100b6r2 ATC100B470JT500XT GRM55DR61H106K MW7IC930NR1 A114 A115 AN1977 AN1987 Text: Freescale Semiconductor Technical Data Document Number: MW7IC930N Rev. 0, 8/2009 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC930N wideband integrated circuit is designed with on - chip matching that makes it usable from 728 to 960 MHz. This multi - stage	Original	MW7IC930N MW7IC930N MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1 J492 atc100b6r2 ATC100B470JT500XT GRM55DR61H106K A114 A115 AN1977 AN1987	PDF
ATC600F470BT250XT Abstract: ATC600F241JT250XT CWCR0805 0908SQ-27NGLC Z27 transistor Text: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 1, 4/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of	Original	AFT05MS031N AFT05MS031NR1 AFT05MS031GNR1 DataAFT05MS031N 4/2013Semiconductor, ATC600F470BT250XT ATC600F241JT250XT CWCR0805 0908SQ-27NGLC Z27 transistor	PDF
Z6 3pin Abstract: J262 AFT09MS007NT1 Text: Freescale Semiconductor Technical Data Document Number: AFT09MS007N Rev. 1, 4/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS007NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this	Original	AFT09MS007N AFT09MS007NT1 Z6 3pin J262 AFT09MS007NT1	PDF
ATC600F241JT Abstract: GRM31CR61H106KA12L atc 17-25 transistor 62 Z27 transistor J103 transistor 3 pin AFT05 GRM31CR61H106K 0806SQ-5N5GLC GRM31CR61H106KA12 Text: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 6/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of	Original	AFT05MS031N AFT05MS031NR1 AFT05MS031GNR1 52ogo, ATC600F241JT GRM31CR61H106KA12L atc 17-25 transistor 62 Z27 transistor J103 transistor 3 pin AFT05 GRM31CR61H106K 0806SQ-5N5GLC GRM31CR61H106KA12	PDF
Untitled Abstract: No abstract text available Text: Document Number: MD8IC925N Rev. 0, 5/2013 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD8IC925N wideband integrated circuit is designed with on−chip matching that makes it usable from 728 to 960 MHz. This multi−stage	Original	MD8IC925N MD8IC925N MD8IC925NR1 MD8IC925GNR1	PDF
MW7IC930NR1 Abstract: MCGPR35V337M10X16-RH ATC100B470JT500XT AN1987 MW7IC930GNR1 MW7IC930NBR1 AN1977 C0603C103J5RACTU Text: Freescale Semiconductor Technical Data Document Number: MW7IC930N Rev. 1, 10/2010 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC930N wideband integrated circuit is designed with on-chip matching that makes it usable from 728 to 960 MHz. This multi-stage	Original	MW7IC930N MW7IC930N MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1 MCGPR35V337M10X16-RH ATC100B470JT500XT AN1987 MW7IC930NBR1 AN1977 C0603C103J5RACTU	PDF
N/A9M07 Abstract: No abstract text available Text: Document Number: AFT09MS007N Rev. 0, 6/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N−Channel Enhancement−Mode Lateral MOSFET AFT09MS007NT1 Designed for handheld two−way radio applications with frequencies from	Original	AFT09MS007N AFT09MS007NT1 N/A9M07	PDF
ATC100B470JT500XT Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MW7IC930N Rev. 1, 10/2010 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC930N wideband integrated circuit is designed with on-chip matching that makes it usable from 728 to 960 MHz. This multi-stage	Original	MW7IC930N MW7IC930N MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1 ATC100B470JT500XT	PDF
j327 transistor Abstract: j327 J334 transistor Text: Freescale Semiconductor Technical Data Document Number: MMRF1017N Rev. 0, 7/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1017NR3 This 80 W RF power LDMOS transistor is designed for wideband RF power amplifiers covering the frequency range of 720 to 960 MHz.	Original	MMRF1017N MMRF1017NR3 j327 transistor j327 J334 transistor	PDF