ATC600F100B Search Results

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Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: NPT1015 Gallium Nitride 28V, 45W, DC-3.5 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •       Suitable for linear and saturated applications Tunable from DC-3.5 GHz 28V Operation Industry Standard Package	Original	NPT1015 NPT1015 NDS-035	PDF
PIMD3 Abstract: No abstract text available Text: NPTB00004 Gallium Nitride 28V, 5W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE, and other applications from DC to 6GHz • 100% RF Tested at 2500MHz	Original	NPTB00004 2500MHz EAR99 6000MHz 2500MHz, NDS-002 PIMD3	PDF
Untitled Abstract: No abstract text available Text: NPT1015 Gallium Nitride 28V, 50W, DC-2.5 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •       Suitable for linear and saturated applications Tunable from DC-2.5 GHz 28V Operation Industry Standard Package	Original	NPT1015 NPT1015 NDS-035	PDF
Untitled Abstract: No abstract text available Text: NPT2010 Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Suitable for linear and saturated applications Tunable from DC-2.2 GHz 48V Operation Industry Standard Package	Original	NPT2010 NPT2010 NDS-034	PDF
AD-009 Abstract: ad009 NPTB00004 12101C105KAT2A ATC600F330B smd cap Cer cap 100uf ERJ-6BWJR033W AD009 smd CAP 27pf 100v 1 0603 Text: AD-009 AD-009: Nitronex NPTB00004 GaN HEMT Tuned for 2.5 to 2.7GHz Driver Applications Application board AD-009 with a Nitronex NPTB00004 GaN HEMT device outputs approximately 29dBm of average RF power under single carrier OFDM WiMAX modulation1 and approximately 12.5dB gain with 22% drain efficiency at 2.5% EVM	Original	AD-009 AD-009: NPTB00004 AD-009 29dBm 150mA. 150ma ad009 12101C105KAT2A ATC600F330B smd cap Cer cap 100uf ERJ-6BWJR033W AD009 smd CAP 27pf 100v 1 0603	PDF
nptb00004 Abstract: NPTB00004DT NPTB00004D 250v m1 APP-NPTB00004-25 NPTB00004DR NBD-012 0J100 j105 250v j105100 Text: NPTB00004 Datasheet Gallium Nitride 28V, 5W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE, and other applications from DC to 6GHz • 100% RF Tested at 2500MHz	Original	NPTB00004 2500MHz EAR99 6000MHz 2500MHz, NDS-002 NPTB00004DT NPTB00004D 250v m1 APP-NPTB00004-25 NPTB00004DR NBD-012 0J100 j105 250v j105100	PDF
Untitled Abstract: No abstract text available Text: NPT2010 Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Suitable for linear and saturated applications Tunable from DC-2.2 GHz 48V Operation Industry Standard Package	Original	NPT2010 NPT2010 NDS-034	PDF
PIMD3 Abstract: No abstract text available Text: NPTB00004 Gallium Nitride 28V, 5W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE, and other applications from DC to 6GHz • 100% RF Tested at 2500MHz	Original	NPTB00004 2500MHz EAR99 6000MHz 2500MHz, NDS-002 PIMD3	PDF