ASLN Search Results

2DR4

Contextual Info: SN74ALS232B 16 x 4 ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORY SCAS251 - FEBRUARY 1988 - R EVISED SEPTEM BER 1993 • Independent Asynchronous Inputs and Outputs • 16 Words by 4 Bits • Data Rates From 0 to 40 MHz e Fall-Through Time. 14 ns Typ • 3-State Outputs

Contextual Info: SN54ABT863, SN74ABT863 9-BIT BUS TRANSCEIVERS WITH 3-STATE OUTPUTS SCBS201C- FEBRUARY 1991 - REVISED MAY 1997 State-of-the-Art EPIC-UB BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V

LS386A

Abstract: SCLS386A CO-AE
Contextual Info: SN54LV14A, SN74LV14A HEX SCHMITT-TRIGGER INVERTERS SCLS386A - SEPTEMBER 1997 - REVISED APRIL 1998 EPIC Enhanced-Performance Implanted CMOS Process Typical V q l p (Output Ground Bounce) < 0.8 V at Vcc, Ta = 25°C Typical Vqhv (Output Vqh Undershoot) > 2 V at Vcc, t A = 25°C

en55011

Abstract: EN50295 APS75-30-SERIES EN55022-B CSA950 5EN3
Contextual Info: UMBDA& APS75-30-SERIES Single output 72W AS-Interface Power Supply DENSEI-LAMBDA Unit Type Power Supply • Model name APS 75 - 30 | Output power Name of series j Nominal output voltage ■ Features • # • # AS-lnterface Power Supply Global scale wide input range: AC85-264V

M514400a

Abstract: M514400 L06lC ZP-20S
Contextual Info: blE H M D • 44TL5D3 GD22774 SOñ 5 1 4 4 0 0 A / A L / A S L S e r i e s — 1,048,576-word X4-bit Dynamic RAM HITACHI/ The Hitachi HM514400A/AL/ASL is a CMOS dynamic RAM organized 1,048,576-word x 4-bit. HM514400A/AL/ASL has realized higher density, higher perform ance and various functions by

Contextual Info: Switches & Pilot Devices Switches & Pilot Devices ø30mm - TWTD Series Relays & Sockets Signaling Lights TWTD Series — Full Size NEMA Pushbuttons TWTD Series: Heavy duty switches built to last Contactors Timers Key features: • Variety of button sizes up to 2 9/16” 65mm

transformer 220V to 24V

Abstract: pw 380v 04 x
Contextual Info: ø30 Series Switches & Pilot Lights Heavy duty switches & pilot lights offer both variety and reliability Endures harsh environments • Degree of protection: IP65 • UL, CSA approved, and EN compliant. Applicable Standards Mark File No. or Organization UL 508

Contextual Info: HYUNDAI HYM5V641OOA N-Series 1M x 64-bit CMOS ORAM MODULE DESCRIPTION The HYM5V64100A is a 1M x 64-bit Fast page mode CMOS DRAM module consisting of sixteen HY51V4400B in 20/26 pin SOJ or TSOP-II and two 16-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed circuit

Contextual Info: •HYUNDAI HYM5V64404A N-Series 4M X 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V64404A is a 4M x 64-bit EDO mode CMOS DRAM module consisting of sixteen HY51V16404A in 24/28 pin SOJ or TSOP-II and two 16-bit BiCMOS line drivers in TSSOP on a 168 pin glass-epoxy printed circuit board.

HY5117404A

Abstract: 168pin dram socket
Contextual Info: HYM564414A N-Series 4Mx64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM564414A is a 4M x 64-bit EDO mode CMOS DRAM module consisting of sixteen HY5117404A in 24/28 pin SOJ or TSOPII and two 16-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed

ftm 230

Abstract: LQFP144-P-2020-0 ML670100 DBAS 78
Contextual Info: Semiconductor ML670100 Users’ Manual Version 1.0 of April, 1999 NOTICE 1. The information contained herein can change without notice owing to product and/or technical improvements. Before using the product, please make sure that the information being referred to

marking he 5pin mosfet driver

Abstract: TSOT23-5 AS1358 AS1359 TSOT23
Contextual Info: AS1358/AS1359 D a ta S he e t 150mA/300mA, Ultra-Low-Noise, High-PSRR Low Dropout Regulators 1 General Description 2 Key Features The AS1358/AS1359 are ultra-low-noise, low-dropout linear regulators specifically designed to deliver up to 150/300mA continuous output current, and can achieve

TC59R1809

Abstract: Toshiba Rambus IC TC59R1809VK ise 25001
Contextual Info: TOSHIBA TC59R1809VK/HK PRELIMINARY 2,097,152 WORD x 9-BIT RAMBUS DYNAMIC RAM Description T h e T C 5 9 R 1 8 0 9 V K /H K R a m b u s D y n a m ic R A M RD R AM is a n e x t-g e n e ra tio n h ig h -s p e e d C M O S D R A M w ith a 2 ,0 9 7 ,1 5 2 x 9 -b it o rg a n iz a tio n a n d b u ilt-in slave logic. T h e 3 6 ,8 6 4 se n se a m p s o f th e D R AM co re are use d as c a c h e to a ch ie ve d a ta

gm73v1892

Abstract: GM73V1892H 73V1892H gm73v1892h16l 73V1 70BIL LG GM73 gm73v1892h-16l gm73v
Contextual Info: GM 73 V1892H16L GM 73V1892H 17L 2 ,0 9 7 ,1 5 2 W O R D S x/ 9 b i t LG Sem icon Co Ltd o e i l l i u u n O U .,l_ L U . R a m b u s D R A M Description T h e G M 7 3 V 1 8 9 2 H 1 6 L / G M 7 3 V 1 8 9 2 H 1 7 L R a m b u s D y n a m ic R a n d o m A c c e ss M e m o ry R D R A M is a

Sensick Sensors DS 60 DtR IR

Abstract: SICK WL 25 123 ASI-S12343 SICK cross refeRENCE m8 connector to rs232 cable assignment ASI-M32321 Sensick ds 60 dtr ir sick WL 14 p 430 asi bus DOL wiring diagram motor
Contextual Info: TECHNICAL DESCRIPTION AS-i Components Actuator-Sensor Interface: intelligent wiring 01_TB_ASI_Intro_en.qxd 09.08.2006 11:47 Uhr Seite 2 AS-i Applications AS-i Applications Central control of complex processes in the packaging industry with AS-i. To Control System

KT 3877

Contextual Info: RC4200 RC4200 Analog Multiplier Description Features The RC4200 analog multiplier has complete compensation for nonlinearity, the primary source of error and distortion. This multiplier also has three on­ board operational amplifiers designed specifically for

CDQ31

Contextual Info: HYUNDAI HYM5V64400A N-Series 4M X 64-bit CMOS DRAM MODULE DESCRIPTION The HYM5V64400A is a 4M x 64-bit Fast page mode CMOS DRAM module consisting of sixteen HY51V16400A in 24/28 pin SOJ or TSOP-II and two 16-bit BiCMOS line drivers in TSSOP on a 168 pin glass-epoxy printed circuit

GM73V1892

Abstract: concurrent RDRAM 72 concurrent rdram LG LG concurrent RDRAM 1I159 gm73v189 gm73v
Contextual Info: GM73V1892 GM73V1682 LG Semicon Co.,Ltd. 2,097,152 WORDS x 8/9 BIT Rambus DRAM Description The GM73V1682 / GM73V1892 Rambus Dynamic Random Access Memory RDRAM is a next generation high-speed CMOS DRAM organized as 2,097,152 x8/9 bits and capable o f bursting up to 256

U2506

Contextual Info: “ H Y U N D A I H Y M 5 V 7 2 1 3 A N - S e r i e s 1 M x 72_bjt CM 0S DRAM MODULE DESCRIPTION The HYM5V72103A is a 1M x 72-bit Fast page mode CMOS DRAM module consisting of sixteen HY51V4400B in 20/26 pin SOJ or TSOP-II, two HY51V4403B in 24/26 pin SOJ or TSOP-II and two 16-bit BiCMOS line drivers in

LR48366

Abstract: pUsh button start switch idec diode color code AC Transformer 120v to 12v Jumbo red LED ABD-100 push pull switches EN60947-1 EN60947-5-1 VDE0660-200
Contextual Info: Oiltight Switches & Pilot Devices ø30mm - TWTD Series TWTD Series: Heavy duty switches built to last Key features include: • Variety of button sizes up to 2 9/16” 65mm • Rugged construction includes chrome plated zinc locking ring die cast zinc mounting threads, screw mounted contact blocks

AS1358

Abstract: AS1359 TSOT23
Contextual Info: AS1358/AS1359 D a ta S he e t 150mA/300mA, Ultra-Low-Noise, High-PSRR Low Dropout Regulators 1 General Description 2 Key Features The AS1358/AS1359 are ultra-low-noise, low-dropout linear regulators specifically designed to deliver up to 150/300mA continuous output current, and can achieve

Toshiba rdram

Abstract: TC59R1809
Contextual Info: TO S H IB A D IG IT A L IN TE G R A TE D CIRCUIT i N T t ^ K A t E D C IR C U IT T C 5 9 R 1 8 0 9 V K /H K TOSHIBA TFCHNICAL DATA SILICO N G> T E "C M O S TENTATIVE 2 ,0 9 7 ,152w ord x 9 - b i t Rambus DRAM INTRO DUCTIO N The TC59R1809VK/HK Rambus DRAM RDRAM is a next-generation*

ILR16

Contextual Info: 1 FJUL67Q3001-03 ML67Q3001 ハードウェアマニュアル 32 ビットマイクロコントローラ 第 3 版 2001 年 9 月作成 ご 注 意 1. 本書に記載された内容は製品改善及び技術改良等により将来予告なしに変更することがあります。したがって、

DP8409AN

Abstract: DP8409AD DP8409A D48A N48A V68A interface 64K RAM with 8086 MP dps409
Contextual Info: DP8409A yw\National ÉHASemiconductor DP8409A Multi-Mode Dynamic RAM Controller/Driver General Description Operational Features D ynam ic m em ory system designs, which form erly required several support chips to drive the m em ory array, can now be im plem ented w ith a single 1C . , . the D P8409A M ulti­