ASI10730 Search Results

ASI10730 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
ASI10730		Advanced Semiconductor	NPN SILICON RF POWER TRANSISTOR		Original	PDF

ASI10730 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
VHB50-28S Abstract: ASI10730 Contextual Info: VHB50-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB50-28S is an NPN power transistor designed for 25 V Class-C ground station transmitters, it utilizes emitter ballasting and gold metalization to provide optimum VSWR capability. PACKAGE STYLE .380 4L STUD	Original	VHB50-28S VHB50-28S 112x45° ASI10730	PDF
ASI10730 Abstract: VHB50-28S Contextual Info: VHB50-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L STUD The ASI VHB50-28S is Designed for .112x45° FEATURES: A B • • • Omnigold Metalization System ØC D H MAXIMUM RATINGS J G #8-32 UNC-2A IC 6.5 A VCBO 65 V VCEO 35 V VEBO	Original	VHB50-28S VHB50-28S 112x45° ASI10730 ASI10730	PDF
Contextual Info: VHB50-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB50-28S is Designed for Class C, 28 V High Band Applications up to 175 MHz. PACKAGE STYLE .380 4L STUD .112x45° A • Common Emitter • PG = 6.0 dB at 50 W/175 MHz • Omnigold Metalization System	Original	VHB50-28S VHB50-28S 112x45° ASI10730	PDF

Catalog Datasheet

Type

Document Tags

PDF

VHB50-28S

Abstract: ASI10730
Contextual Info: VHB50-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB50-28S is an NPN power transistor designed for 25 V Class-C ground station transmitters, it utilizes emitter ballasting and gold metalization to provide optimum VSWR capability. PACKAGE STYLE .380 4L STUD

Original

VHB50-28S VHB50-28S 112x45° ASI10730

PDF

ASI10730

Abstract: VHB50-28S
Contextual Info: VHB50-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L STUD The ASI VHB50-28S is Designed for .112x45° FEATURES: A B • • • Omnigold Metalization System ØC D H MAXIMUM RATINGS J G #8-32 UNC-2A IC 6.5 A VCBO 65 V VCEO 35 V VEBO

Original

VHB50-28S VHB50-28S 112x45° ASI10730 ASI10730

PDF

Contextual Info: VHB50-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB50-28S is Designed for Class C, 28 V High Band Applications up to 175 MHz. PACKAGE STYLE .380 4L STUD .112x45° A • Common Emitter • PG = 6.0 dB at 50 W/175 MHz • Omnigold Metalization System

Original

VHB50-28S VHB50-28S 112x45° ASI10730

PDF