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    ASI10666 Search Results

    ASI10666 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ASI10666 Advanced Semiconductor NPN SILICON RF POWER TRANSISTOR Original PDF

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    ASI10666

    Abstract: UFT30-28
    Text: UFT30-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The UFT30-28 is Designed for Class A and B Power Ampliifiers Operating up to 500 MHz. PACKAGE STYLE .380 4L FLG. B .112 x 45° FEATURES: A S D Ø.125 NOM. FULL R J • PG = 7.0 dB min. at 25 W/400 MHz • ηD = 60 % Typical


    Original
    PDF UFT30-28 UFT30-28 ASI10666 ASI10666

    ASI10666

    Abstract: UFT30-28S
    Text: UFT30-28S NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .380 4L STUD DESCRIPTION: .112x45° The ASI UFT30-28S is Designed for A B FEATURES: ØC • • • Omnigold Metalization System D H J G #8-32 UNC-2A F MAXIMUM RATINGS E 10 A IC VCB VCE 60 V 35 V PDISS


    Original
    PDF UFT30-28S 112x45° UFT30-28S ASI10666 ASI10666

    ASI10666

    Abstract: UFT30-28
    Text: UFT30-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The UFT30-28 is Designed for Class A and B Power Ampliifiers Operating up to 500 MHz. PACKAGE STYLE .380 4L FLG. B .112 x 45° A S FEATURES: D Ø.125 NOM. FULL R J • PG = 7.0 dB min. at 25 W/400 MHz • η D = 60 % Typical


    Original
    PDF UFT30-28 UFT30-28 ASI10666 ASI10666