ASI TRANSISTOR Search Results

D-73277

Abstract: SQ 4849 QUARTZ D-73277 Owen asi bus SQ 4849 SE432 mc1747 AS-Interface circuit diagram D4021 parallel to ASI
Contextual Info: AS2701 ASI Slave IC DATA SHEET Key Features - General Description Simple two-wire bus ASI line Transmission of both power and signal on the ASI line Decoupling of power and signal by the IC without additional external devices Transmitting protocol for using the IC and the ASI

D-73277

Abstract: BRYANT fuse holder parallel serial interface asi parallel to ASI D-73277 Owen AS2701AT
Contextual Info: AS2701A ASI Slave IC Data Sheet ASI Slave IC AS2701A Key Features • • • • • • • • • • Simple two-wire bus ASI line Transmission of both power and signal on the ASI line Decoupling of power and signal by the IC without additional external devices

D-73277

Abstract: asi bus chris Diode LT 5333 LEUZE OTTO P3
Contextual Info: AS2701A Datasheet AS2701 ASI Slave IC DATA SHEET Key Features General Description • • • The signal transmission between the master and the slaves in the ASI system is performed by a parallel two-line wire ASI-line to which the IC is connected only via a polarity

Diode LT 5333

Abstract: asi bus AS-Interface circuit diagram D-73277 SQ 4849 QUARTZ leuze D-73277 Owen AS-Interface Programmer SQ 4849 AS2701
Contextual Info: AS2701A Datasheet AS2701 ASI Slave IC DATA SHEET Key Features General Description • • • The signal transmission between the master and the slaves in the ASI system is performed by a parallel two-line wire ASI-line to which the IC is connected only via a polarity

BLV59

Contextual Info: ASI BLV59 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV59 is a Common Emitter Device Designed for Class A and AB Amplifier Applications in TV Band IV-V Transmitters. FEATURES INCLUDE: • Gold Metalization • Intrnal Matching • Emitter Ballasting

HXTR-5101

Abstract: 2N6701
Contextual Info: m ASI 2N6701 \ \ SILICON NPN RF TRANSISTOR DESCRIPTION: The ASI 2N6701 is Designed for Linear Power Amplifier Applications to 4 GHz . FEATURES: • Direct Replacement for 2N6701 & HP HXTR5101 • Gold Metalization • Hermetic Package MAXIMUM RATINGS 120 lc

Contextual Info: ASI Semiconductor, Inc. ASI designs, manufactures and markets stateof-the-art high power, pulsed RF transistors and modules. We proudly serve thousands of customers in dozens of countries, specifically focusing on pulsed RF military and commercial applications; avionics,

TVU005

Contextual Info: ASI TVU005 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L STUD The ASI TVU005 is a Common Emitter Device Designed for High Linearity Class A Television Band IV and V Transmitters. FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting

SD1537-2

Abstract: SD1537 "RF Power Transistor"
Contextual Info: ASI SD1537-2 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .175 2L FLG DESCRIPTION: The ASI SD1537-2 is a Common Base Device Class C, Designed for IFF Applications. FEATURES INCLUDE: • Gold Metelization • InputMatching • Broad Band Performance MAXIMUM RATINGS

Contextual Info: ASI SD153008 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD153008 is a Common Base Device Designed for DME IFF, and Tacan Pulse Applications. FEATURES INCLUDE: • Gold Metalization • Input Matching • Broad Band Performance PACKAGE STYLE 250 2L FLG A

S-5028

Abstract: S-50-28 MP transistor
Contextual Info: ASI S50-28/MP NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI S50-28/MP is Designed for Class AB or C, Common Emitter Linear HF Communications Applications. PACKAGE STYLE .500" 4L FLG FEATURES INCLUDE: • hFE Matching High Power Gain Emitter Ballasting

Contextual Info: ASI SD1538-8 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1538-8 is a Common Base Device Designed for DME IFF, and Tacan Pulse Applications. FEATURES INCLUDE: • Gold Metelization • InputMatching • Broad Band Performance PACKAGE STYLE 250 2L FLG A

Diode LT 5333

Abstract: D-73277 f9250
Contextual Info: AS2701 ASI Slave IC DATA SHEET Key Features General Description • • • The signal transmission between the master and the slaves in the ASI system is performed by a parallel two-line wire ASI-line to which the IC is connected only via a polarity protection diode and a suppressor diode. The line is

BLX15

Abstract: TRANSISTOR blx15 A5015
Contextual Info: ASI BLX15 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLX15 is a Common Emitter Device Designed for High Linearity Class A/AB HF Applications. PACKAGE STYLE .550 4L STUD FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting MAXIMUM RATINGS

SD1542

Abstract: "RF Power Transistor" 5002L
Contextual Info: ASI SD1542 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1542 is a Common Base Device Designed for, IFF and DME Pulse Applications. PACKAGE STYLE .400 X 500 2L FLG FEATURES INCLUDE: • Gold Metalization • Input/Output Matching • Hermetically Sealed

Contextual Info: ASI SD1541-01 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1541-01 is a Common Base Device Designed for DME Pulse Applications. PACKAGE STYLE .400 2L FLG FEATURES INCLUDE: • Gold Metalization • Input/Output Matching MAXIMUM RATINGS IC 22 A VCES

S15-28

Contextual Info: ASI S15-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI S15-28 is Designed for Class AB or C, Common Emitter Linear HF Communications Applications. PACKAGE STYLE .380" 4L FLG FEATURES INCLUDE: • High Power Gain Emitter Ballasting • MAXIMUM RATINGS

85206

Contextual Info: ASI 85206 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 85206 is Designed for Common Collector Oscillator Applications up to 2.3 GHz. PACKAGE STYLE .250 2L FLG A ØD FEATURES INCLUDE: B E • Direct Replacement for MSC85206 • Hermetic Flange Package

Contextual Info: ASI SD1541-1 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1541-1 is a Common Base Device Designed for, DME Pulse Applications. FEATURES INCLUDE: PACKAGE STYLE .400 2L FLG B • Gold Metalization • Input/Output Matching MAXIMUM RATINGS IC 40 A

S50-28

Abstract: S-50 "RF Power Transistor" "RF Power"
Contextual Info: ASI S50-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI S50-28 is Designed for Class AB or C, Common Emitter Linear HF Communications Applications. PACKAGE STYLE .500" 4L FLG FEATURES INCLUDE: • High Power Gain • Emitter Ballasting MAXIMUM RATINGS

SD1542-42

Abstract: 5002l
Contextual Info: ASI SD1542-42 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 X 500 2L FLG The ASI SD1542-42 is a Common Base Device Designed for, IFF and DME Pulse Applications. FEATURES INCLUDE: • Gold Metalization • Input/Output Matching • Hermetically Sealed

SD1536-08

Abstract: TACAN
Contextual Info: ASI SD1536-08 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .250 SQ 2L FL DESCRIPTION: The ASI SD1536-08 is a Common Base Device Designed for DME IFF, and TACAN Pulse Applications. 1 3 FEATURES INCLUDE: 2 • Gold Metallization • Internal Impedance Matching

TACAN

Abstract: SD1530-7
Contextual Info: ASI SD1530-7 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1530-7 is a Common Base Device Designed for DME, IFF and Tacan Pulse Applications. FEATURES INCLUDE: • Gold Metalization • Input Matching • Broad Band Performance PACKAGE STYLE 250 2L FLG A

TPV3100

Abstract: TPV-3100 transistor tpv3100 "Power TRANSISTOR"
Contextual Info: ASI TPV3100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 8L FLG The ASI TPV3100 is a Class A Common Device Designed for Television Band III Applications. C D F U LL R G O F E FEATURES INCLUDE: .1925 • Gold Metalization • Emitter Ballasting