FTN035N60
Abstract: No abstract text available
Text: FTN035N60 600V, N-Channel MOSFET General Features BVDSS RDS ON (Max.) ID 600V 13.5 Ω 0.35A eet • Extremely high dv/dt capability • Low Gate Charge • ESD improved capability • 100% avalanche tested • New high voltage Benchmark aSh Applications：
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FTN035N60
FTN035N60
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fta02n60
Abstract: F*02N60 FTP02N60 ftp02n FTA-02
Text: FTP02N60/FTA02N60 600V N-Channel MOSFET General Features ¾ ¾ ¾ ¾ ¾ Low ON Resistance Low Gate Charge typical 8.9nC Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free BVDSS RDS(ON) (Max.) ID 600V 4.4Ω 2.2A Applications ¾ ¾ ¾ ¾ High Efficiency SMPS
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FTP02N60/FTA02N60
FTP02N60
O-220
FTA02N60
O-220F
fta02n60
F*02N60
FTP02N60
ftp02n
FTA-02
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FTP08N50
Abstract: ftp08n FTA08N50 n-channel 250V 80a power mosfet ARK Microelectronics
Text: FTP08N50/FTA08N50 500V N-Channel MOSFET General Features ¾ ¾ ¾ ¾ ¾ Low ON Resistance Low Gate Charge typical 33nC Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free BVDSS RDS(ON) (Max.) ID 500V 0.9Ω 8.0A Applications ¾ ¾ ¾ ¾ High Efficiency SMPS
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FTP08N50/FTA08N50
FTP08N50
O-220
FTA08N50
O-220F
FTP08N50
ftp08n
FTA08N50
n-channel 250V 80a power mosfet
ARK Microelectronics
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high-tek
Abstract: No abstract text available
Text: AK6968 20V Dual Common Drain N-Channel MOSFET General Features ¾ ¾ ¾ ¾ Fast Switching Minimize the on-state Resistance 100% Avalanche Tested RoHS Compliant/Lead Free BVDSS RDS ON (Max.) ID 20V 0.017Ω @ VGS=4.5V 0.020Ω @ VGS=2.5V 6.2A 5.3A Applications
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AK6968
high-tek
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ftd01n
Abstract: TO252-DPAK FTD01 N-Channel 600V MOSFET FTU01N60A TO252-DPAK package 8E-05 FTD-01 ftd01n60a high-tek
Text: FTU01N60A/FTD01N60A 600V N-Channel MOSFET General Features ¾ ¾ ¾ ¾ ¾ Low ON Resistance Low Gate Charge typical 3.1nC Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free BVDSS RDS(ON) (Max.) ID 600V 13.5Ω 0.8A Applications ¾ ¾ ¾ ¾ High Efficiency SMPS
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FTU01N60A/FTD01N60A
FTU01N60A
O-251IPAK
FTD01N60A
O-252DPAK
ftd01n
TO252-DPAK
FTD01
N-Channel 600V MOSFET
FTU01N60A
TO252-DPAK package
8E-05
FTD-01
ftd01n60a
high-tek
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fta04n60
Abstract: fta*04n60 MOSFET 40A 600V N-Channel 600V MOSFET
Text: FTP04N60/FTA04N60 600V N-Channel MOSFET General Features ¾ ¾ ¾ ¾ ¾ Low ON Resistance Low Gate Charge typical 20nC Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free BVDSS RDS(ON) (Max.) ID 600V 2.2Ω 4.0A Applications ¾ ¾ ¾ ¾ High Efficiency SMPS
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FTP04N60/FTA04N60
FTP04N60
O-220
FTA04N60
O-220F
fta04n60
fta*04n60
MOSFET 40A 600V
N-Channel 600V MOSFET
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ftd01n
Abstract: FTD01N60 ftd01 TO252-DPAK DSAE003311 TO252-DPAK package FTU01N60 N-Channel 600V MOSFET
Text: FTU01N60/FTD01N60 600V N-Channel MOSFET General Features ¾ ¾ ¾ ¾ ¾ Low ON Resistance Low Gate Charge typical 4.8nC Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free BVDSS RDS(ON) (Max.) ID 600V 8.2Ω 1.0A Applications ¾ ¾ ¾ ¾ High Efficiency SMPS
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FTU01N60/FTD01N60
FTU01N60
O-251IPAK
FTD01N60
O-252DPAK
ftd01n
FTD01N60
ftd01
TO252-DPAK
DSAE003311
TO252-DPAK package
FTU01N60
N-Channel 600V MOSFET
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BALLAST CFL
Abstract: FTN01N60
Text: FTN01N60 600V, N-Channel MOSFET General Features BVDSS RDS ON (Max.) ID 600V 8.2 Ω 1.0A eet • Extremely high dv/dt capability • Low Gate Charge • ESD improved capability • 100% avalanche tested • New high voltage Benchmark aSh Applications：
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FTN01N60
BALLAST CFL
FTN01N60
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TO252-DPAK
Abstract: TO 252DPAK TO252-DPAK package TO-252DPAK
Text: FTU05N50/FTD05N50 500V N-Channel MOSFET General Features ¾ ¾ ¾ ¾ ¾ Low ON Resistance Low Gate Charge typical 20.6nC Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free BVDSS RDS(ON) (Max.) ID 500V 1.35Ω 4.5A Applications ¾ ¾ ¾ ¾ High Efficiency SMPS
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FTU05N50/FTD05N50
FTU05N50
O-251IPAK
FTD05N50
O-252DPAK
TO252-DPAK
TO 252DPAK
TO252-DPAK package
TO-252DPAK
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FTP10N40
Abstract: ftp06n40 ftp*06N40 FTP10N40 equivalent FTA10N40 FTA06N40 equivalent transistor of ftp10n40 60A 45V TO-220F Ftp10N4 equivalent transistor of ftp06n40
Text: FTP10N40/FTA10N40 400V N-Channel MOSFET General Features ¾ ¾ ¾ ¾ ¾ Low ON Resistance Low Gate Charge typical 34nC Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free BVDSS RDS(ON) (Max.) ID 400V 0.50Ω 10A Applications ¾ ¾ ¾ ¾ High Efficiency SMPS
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FTP10N40/FTA10N40
FTP10N40
O-220
FTA10N40
O-220F
FTP10N40
ftp06n40
ftp*06N40
FTP10N40 equivalent
FTA10N40
FTA06N40
equivalent transistor of ftp10n40
60A 45V TO-220F
Ftp10N4
equivalent transistor of ftp06n40
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fta02n65
Abstract: FTP02N65 FTA-02 11A 650V
Text: FTP02N65/FTA02N65 650V N-Channel MOSFET General Features ¾ ¾ ¾ ¾ ¾ Low ON Resistance Low Gate Charge typical 8.0nC Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free BVDSS RDS(ON) (Max.) ID 650V 6.2Ω 1.8A Applications ¾ ¾ ¾ ¾ High Efficiency SMPS
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FTP02N65/FTA02N65
FTP02N65
O-220
FTA02N65
O-220F
fta02n65
FTP02N65
FTA-02
11A 650V
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FTA07N60
Abstract: FTP07N60
Text: FTP07N60/FTA07N60 600V N-Channel MOSFET General Features ¾ ¾ ¾ ¾ ¾ Low ON Resistance Low Gate Charge typical 38.6nC Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free BVDSS RDS(ON) (Max.) ID 600V 1.1Ω 7.0A Applications ¾ ¾ ¾ ¾ High Efficiency SMPS
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FTP07N60/FTA07N60
FTP07N60
O-220
FTA07N60
O-220F
FTA07N60
FTP07N60
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ftp05n50
Abstract: BVDSS FTP05N50/FTA05N50
Text: FTP05N50/FTA05N50 500V N-Channel MOSFET General Features ¾ ¾ ¾ ¾ ¾ Low ON Resistance Low Gate Charge typical 20.6nC Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free BVDSS RDS(ON) (Max.) ID 500V 1.35Ω 4.5A Applications ¾ ¾ ¾ ¾ High Efficiency SMPS
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FTP05N50/FTA05N50
FTP05N50
O-220
FTA05N50
O-220F
ftp05n50
BVDSS
FTP05N50/FTA05N50
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diode ry 10 A
Abstract: No abstract text available
Text: FTU03N25E 250V N-Channel ESD-Protected MOSFET General Features BVDSS RDS ON (Max.) ID 250V 1.5Ω 3.0A t ESD Improved Capability Low ON Resistance Low Gate Charge (typical ?nC) Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free ee ¾ ¾ ¾ ¾
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FTU03N25E
O-251IPAK
diode ry 10 A
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ftu02p
Abstract: No abstract text available
Text: FTU02P25E 250V P-Channel ESD-Protected MOSFET General Features BVDSS RDS ON (Max.) ID -250V 3.7Ω -2.0A t ESD Improved Capability Low ON Resistance Low Gate Charge (typical ?nC) Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free ee ¾ ¾ ¾ ¾
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FTU02P25E
-250V
O-251IPAK
ftu02p
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FTA06N60
Abstract: FTP06N60 MAr 11 058E-05 8E-05 031E03
Text: FTP06N60/FTA06N60 600V N-Channel MOSFET General Features ¾ ¾ ¾ ¾ ¾ Low ON Resistance Low Gate Charge typical 33nC Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free BVDSS RDS(ON) (Max.) ID 600V 1.25Ω 6.0A Applications ¾ ¾ ¾ ¾ High Efficiency SMPS
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FTP06N60/FTA06N60
FTP06N60
O-220
FTA06N60
O-220F
FTA06N60
FTP06N60
MAr 11
058E-05
8E-05
031E03
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ftp06n40
Abstract: ftp*06N40 FTA06N40 equivalent transistor of ftp06n40 0/FTP06N40
Text: FTP06N40/FTA06N40 400V N-Channel MOSFET General Features ¾ ¾ ¾ ¾ ¾ Low ON Resistance Low Gate Charge typical 18.6nC Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free BVDSS RDS(ON) (Max.) ID 400V 1.0Ω 5.5A Applications ¾ ¾ ¾ ¾ High Efficiency SMPS
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FTP06N40/FTA06N40
FTP06N40
O-220
FTA06N40
O-220F
ftp06n40
ftp*06N40
FTA06N40
equivalent transistor of ftp06n40
0/FTP06N40
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p-channel 250V 30A power mosfet
Abstract: PN channel MOSFET 10A AK2501E
Text: AK2501E 250V N-Channel + P-Channel ESD-Protected MOSFET General Features t ESD Improved Capability Low ON Resistance Fast Switching RoHS Compliant/Lead Free Small Surface Mount Package SOP8 ee ¾ ¾ ¾ ¾ ¾ Applications High Efficiency SMPS DC/DC Converter
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AK2501E
p-channel 250V 30A power mosfet
PN channel MOSFET 10A
AK2501E
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Untitled
Abstract: No abstract text available
Text: 9 UNITED MICROELECTRONICS 3QE • T32SASS DDQ02S7 M ■ T ~ *±5 T - ^ - /5 - U M 3217 6-Digit Muitifunction Watch ■ Single 1.5 volt battery operation ■ 3 2 7 6 8 H z quartz crystal tim e base § I ■ 6-digit LCD w ith 7-day m ark, A M /P M m ark, date m ark,
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T32SASS
DDQ02S7
UM3217H
12-hour
UM3219AH/GH
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ATT65630
Abstract: 65630 ATT65654 ci 7495 ATT65636 ttl 7495 ATT65640 ATT65646 ATT65650 ATT65658
Text: Product Brief = AT&T F Microelectronics ATT656 Series CMOS Gate Arrays Features Description • 1.0 im CMOS Si-gate triple-layer metal process technology; 0.75 |xm effective channel length The ATT656 series of CMOS gate arrays combines the leading edge technology necessary
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ATT656
ATT65630
65630
ATT65654
ci 7495
ATT65636
ttl 7495
ATT65640
ATT65646
ATT65650
ATT65658
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PowerPC 601 instructions set
Abstract: PPC601 ppc601fd
Text: Prelim inary D ata IBM Microelectronics Total Technology Solutions“ PowerPC601 100 MHz RISC Microprocessor P roduct D escription The IBM Microelectronics PowerPC 6011Mmicroprocessor is the first im plem entation of the PowerPC™ family of Reduced Instruction Set
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6011Mmicroprocessor
32-bit
PowerPC 601 instructions set
PPC601
ppc601fd
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Untitled
Abstract: No abstract text available
Text: microelectronics group Lucent Technologies Bell Labs Innovations DSP16210 D igital Signal Processor The D SP 16210 is the first D SP device based FEATURES on the D SP16000 digital signal processing core. It is manufactured in a 0.35 J im CM O S technology and offers a 10 ns instruction cycle
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DSP16210
SP16000
40-bit
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UM83C002
Abstract: UM83C021 C127E ESDI CRC-16 ST-506 QIC-36 ESDI host G0004 6L57
Text: UNICORN MICROELECTRONICS 24 E D T S T flT ñ ñ 0 0 0 0 3 ^ 2 T I 3 3 ñ S3 T ^ Z - S Z - ú Z UM83C021 Hard Disk Controller P R E L IM IN A R Y Features Sector • Serializer-deserializer ■ Programmable track format, compatible with WD Track format ■ External drive select and head select registers for expandability
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6l57fl7Ã
UM83C021
ST-506,
ST-412,
ST-412HP,
QIC-36
UM83C021
ST-506
ST-412
UM83C002
C127E
ESDI
CRC-16
ST-506
ESDI host
G0004
6L57
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L2496
Abstract: No abstract text available
Text: Military Standard Products UT22VP10 Universal RAD pal Data Sheet UNITED TECHNOLOGIES MICROELECTRONICS CENTER April 1996 FEATURES □ VDD: 5.0 volts ±10% □ High speed Universal RAD pal - tpj : 20ns, 25ns maximum - □ Radiation-hardened process and design; total dose irradia
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UT22VP10
33MHz
L-2-4-96
L2496
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