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    ARAY RESISTOR Search Results

    ARAY RESISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    37-1409 Coilcraft Inc Tuning tool Visit Coilcraft Inc Buy
    37-2182 Coilcraft Inc Tuning tool Visit Coilcraft Inc Buy
    AA1A4M-A Renesas Electronics Corporation Built-in Resistor Bipolar Transistors, , / Visit Renesas Electronics Corporation
    AA1A3Q-A Renesas Electronics Corporation Built-in Resistor Bipolar Transistors, , / Visit Renesas Electronics Corporation
    GA4L3Z(0)-T1-AT Renesas Electronics Corporation Built-in Resistor Bipolar Transistors Visit Renesas Electronics Corporation

    ARAY RESISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    by118

    Abstract: No abstract text available
    Text: CY8C23433, CY8C23533 PSoC Mixed-Signal Aray Features • ■ Powerful Harvard Architecture Processor ❐ M8C processor speeds to 24 MHz ❐ 8x8 multiply, 32-bit accumulate ❐ Low power at high speed ❐ 3.0 to 5.25V operating voltage ❐ Industrial temperature range: -40°C to +85°C


    Original     		PDF CY8C23433, CY8C23533 32-bit 14-bit by118

    AT17C512-10PI

    Abstract: ATMEL Application Note EEPROM SOIC TCDF ATMEL 940 Atmel 826 lv512 AT17LV010-10JI AT17 AT40K ATDH2200E
    Text: Features • EE Programmable 524,288 x 1- and 1,048,576 x 1-bit Serial Memories Designed to Store Configuration Programs for Field Programmable Gate Arrays FPGAs • In-System Programmable via 2-wire Bus • Simple Interface to SRAM FPGAs • Compatible with Atmel AT6000, AT40K FPGAs, Altera FLEX Devices, Lucent ORCA®


    Original     		PDF AT6000, AT40K XC3000, XC4000, XC5200, AT24CXXX 0944D 06/01//xM AT17C512-10PI ATMEL Application Note EEPROM SOIC TCDF ATMEL 940 Atmel 826 lv512 AT17LV010-10JI AT17 ATDH2200E

    SRAM sheet samsung

    Abstract: No abstract text available
    Text: Preliminary K7H163654A 512Kx36 DDR CIO b4 SRAM Document Title 512Kx36-bit DDR CIO b4 SRAM Revision History Rev. No. 0.0 History Draft Date 1. Initial document. 2. Add Icc & Isb November, 25 2001 March,25 2002 Remark Preliminary Preliminary The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the


    Original     		PDF K7H163654A 512Kx36 512Kx36-bit 512Klock 11x15 SRAM sheet samsung

    K7H163654A-FC20

    Abstract: K7H163654A-FC25 K7H163654A-FC30
    Text: K7H163654A 512Kx36 DDR CIO b4 SRAM Document Title 512Kx36-bit DDR CIO b4 SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. 2. Add Icc & Isb November, 25 2001 March,25 2002 Preliminary Preliminary 1.0 1. Final SPEC release 2. Modify thermal resistance


    Original     		PDF K7H163654A 512Kx36 512Kx36-bit 11x15 K7H163654A-FC20 K7H163654A-FC25 K7H163654A-FC30

    Untitled

    Abstract: No abstract text available
    Text: Preliminary K7H163654A 512Kx36 DDR CIO b4 SRAM Document Title 512Kx36-bit DDR CIO b4 SRAM Revision History Rev. No. 0.0 History Draft Date 1. Initial document. November, 25 2001 Remark Preliminary The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the


    Original     		PDF K7H163654A 512Kx36-bit 512Kx36 11x15

    IR 10D 8A

    Abstract: No abstract text available
    Text: K7Q163652A K7Q161852A 512Kx36 & 1Mx18 Preliminary b2 SRAM QDRTM Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM Revision History History Draft Date Remark 0.0 1. Initial document. April, 30, 2001 Advance 0.1 1. Amendment 1 Page 3,4 PIN NAME DESCRIPTION W 4A) : from Read Control Pin to Write Control


    Original     		PDF K7Q163652A K7Q161852A 512Kx36-bit, 1Mx18-bit 512Kx36 1Mx18 IR 10D 8A

    K7Q161882A

    Abstract: K7Q161882A-FC10 K7Q161882A-FC13 K7Q161882A-FC15 K7Q163682A K7Q163682A-FC10 K7Q163682A-FC13 K7Q163682A-FC15 din 6p IR 10D 9F
    Text: K7Q163682A K7Q161882A 512Kx36 & 1Mx18 QDRTM b2 SRAM Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM Revision History History Draft Date Remark 0.0 1. Initial document. May, 22 2001 Advance 0.1 1. Icc, Isb addition 2. 1.8V Vddq addition 3. Speed bin change


    Original     		PDF K7Q163682A K7Q161882A 512Kx36 1Mx18 512Kx36-bit, 1Mx18-bit K7Q161882A K7Q161882A-FC10 K7Q161882A-FC13 K7Q161882A-FC15 K7Q163682A K7Q163682A-FC10 K7Q163682A-FC13 K7Q163682A-FC15 din 6p IR 10D 9F

    K7Q161862B-EC16

    Abstract: ntram
    Text: K7Q163662B K7Q161862B 512Kx36 & 1Mx18 QDRTM b2 SRAM Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Jan. 27, 2004 Advance 1.0 1. Final spec release Mar. 18, 2004 Final Rev. No. The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the


    Original     		PDF K7Q163662B K7Q161862B 512Kx36-bit, 1Mx18-bit 512Kx36 1Mx18 K7Q161862B-EC16 ntram

    Untitled

    Abstract: No abstract text available
    Text: K7Q323652M K7Q321852M 1Mx36 & 2Mx18 Preliminary b2 SRAM QDRTM Document Title 1Mx36-bit, 2Mx18-bit QDRTM SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. September 5, 2001 Advance 0.1 1. Reserved pin for high density name change from NC to Vss/SA


    Original     		PDF K7Q323652M K7Q321852M 1Mx36 2Mx18 1Mx36-bit, 2Mx18-bit

    K7Q161852A

    Abstract: K7Q161852A-FC10 K7Q161852A-FC13 K7Q161852A-FC16 K7Q163652A K7Q163652A-FC10 K7Q163652A-FC13 K7Q163652A-FC16
    Text: K7Q163652A K7Q161852A 512Kx36 & 1Mx18 QDRTM b2 SRAM Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM Revision History History Draft Date Remark 0.0 1. Initial document. April, 30, 2001 Advance 0.1 1. Amendment 1 Page 3,4 PIN NAME DESCRIPTION W 4A) : from Read Control Pin to Write Control


    Original     		PDF K7Q163652A K7Q161852A 512Kx36 1Mx18 512Kx36-bit, 1Mx18-bit K7Q161852A K7Q161852A-FC10 K7Q161852A-FC13 K7Q161852A-FC16 K7Q163652A K7Q163652A-FC10 K7Q163652A-FC13 K7Q163652A-FC16

    K7Q161864B-FC16

    Abstract: D0-35 K7Q161864B K7Q163664B K7Q163664B-FC16
    Text: K7Q163664B K7Q161864B 512Kx36 & 1Mx18 QDRTM b4 SRAM Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Jan. 27, 2004 Advance 1.0 1. Final spec release Mar. 18, 2004 Final Rev. No. The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the


    Original     		PDF K7Q163664B K7Q161864B 512Kx36 1Mx18 512Kx36-bit, 1Mx18-bit K7Q161864B-FC16 D0-35 K7Q161864B K7Q163664B K7Q163664B-FC16

    Untitled

    Abstract: No abstract text available
    Text: K7Q323684M K7Q321884M 1Mx36 & 2Mx18 Preliminary b4 SRAM QDRTM Document Title 1Mx36-bit, 2Mx18-bit QDRTM SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. September 5, 2001 Advance 0.1 1. Changed Pin configuration at x36 organization.


    Original     		PDF K7Q323684M K7Q321884M 1Mx36 2Mx18 1Mx36-bit, 2Mx18-bit K7Q3236

    Untitled

    Abstract: No abstract text available
    Text: K7Q323682M K7Q321882M 1Mx36 & 2Mx18 Preliminary b2 SRAM QDRTM Document Title 1Mx36-bit, 2Mx18-bit QDRTM SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. September, 5 2001 Advance 0.1 1. Changed Pin configuration at x36 organization.


    Original     		PDF K7Q323682M K7Q321882M 1Mx36 2Mx18 1Mx36-bit, 2Mx18-bit

    Untitled

    Abstract: No abstract text available
    Text: K7Q163664B K7Q161864B 512Kx36 & 1Mx18 QDRTM b4 SRAM Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Jan. 27, 2004 Advance 1.0 1. Final spec release Mar. 18, 2004 Final 1.1 1. Added the Part no. of Pb Free Package on page.2


    Original     		PDF K7Q163664B K7Q161864B 512Kx36-bit, 1Mx18-bit 512Kx36 1Mx18 K7Q1636lid

    Untitled

    Abstract: No abstract text available
    Text: K7Q323654M K7Q321854M 1Mx36 & 2Mx18 Preliminary b4 SRAM QDRTM Document Title 1Mx36-bit, 2Mx18-bit QDRTM SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. Sep. 5, 2001 Advance 0.1 1. Reserved pin for high density name change from NC to Vss/SA


    Original     		PDF K7Q323654M K7Q321854M 1Mx36-bit, 2Mx18-bit 1Mx36 2Mx18 -20part

    Untitled

    Abstract: No abstract text available
    Text: K7Q323682M K7Q321882M 1Mx36 & 2Mx18 Preliminary b2 SRAM QDRTM Document Title 1Mx36-bit, 2Mx18-bit QDRTM SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. Sep, 5 2001 Advance 0.1 1. Changed Pin configuration at x36 organization.


    Original     		PDF K7Q323682M K7Q321882M 1Mx36-bit, 2Mx18-bit 1Mx36 2Mx18 -20part

    Untitled

    Abstract: No abstract text available
    Text: K7Q323654M K7Q321854M 1Mx36 & 2Mx18 Preliminary b4 SRAM QDRTM Document Title 1Mx36-bit, 2Mx18-bit QDRTM SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. September 5, 2001 Advance 0.1 1. Reserved pin for high density name change from NC to Vss/SA


    Original     		PDF K7Q323654M K7Q321854M 1Mx36 2Mx18 1Mx36-bit, 2Mx18-bit

    IR 10D 8A

    Abstract: K7Q163682A-FC10
    Text: K7Q163682A K7Q161882A 512Kx36 & 1Mx18 Preliminary b2 SRAM QDRTM Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM Revision History History Draft Date Remark 0.0 1. Initial document. May, 22 2001 Advance 0.1 1. Icc, Isb addition 2. 1.8V Vddq addition 3. Speed bin change


    Original     		PDF K7Q163682A K7Q161882A 512Kx36-bit, 1Mx18-bit 512Kx36 1Mx18 IR 10D 8A K7Q163682A-FC10

    EI 33

    Abstract: Raytheon Company High Flow With Cooling Ring UP 8500 W ML-7479A 3,3 kw MHz relay industrial tube company ei-33 d
    Text: The Machiett Laboratories, Inc. 1063 Hope Street • Stamford, Conn. 06907 IS S U E D 4-68 Tel. 203-348-7511 • TW X 710-474-1744 m M <&CHLÈT£> G e n e ra l Purpose Triode 55 kW CW D E S C R IP T IO N The M L-7479A is a general-purpose vapor-cooled triode


    OCR Scan     		PDF ML-7479A P-512126, ST-2261 EI 33 Raytheon Company High Flow With Cooling Ring UP 8500 W 3,3 kw MHz relay industrial tube company ei-33 d

    photodiode application luxmeter

    Abstract: IS306 light to voltage converter from luxmeter LM733N AD757 Diode IS1588 KPDC0021EA s4751 rca 555 application luxmeter
    Text: Application Circuit Examples Low noise light-sensitive preamplifier -M 5 V Used in receivers for spatial light transm ission and optical rem ote control. A reverse bias is applied to the photodiode to improve frequency response. This circuit can also be used for interface to an am plifier with a low input resistance.


    OCR Scan     		PDF AD549, AD757, PA620 LF357, LF356, LH0032, LF442, HA2625 A3130 photodiode application luxmeter IS306 light to voltage converter from luxmeter LM733N AD757 Diode IS1588 KPDC0021EA s4751 rca 555 application luxmeter

    RJMG16XXX8XX1XX

    Abstract: 0-KN-21 RJMG16XXX 2t512 NE045
    Text: I _ A_ I_ _ _ _ _ _ _ _ _ CUSTOMER DRAWING T K a d a e u m e n t ia t h a prop e rty a f A m p h « n o l C a rp a ro tio n a n d Ta dtt4iV*rod a n ih a c x p r n a s candrtÎDn that it b not ta b e dia clo se d , rn p ra d u co d o r ucfid, in w holû o r In port, fo r m a n u fa c t u ra n r so la h y a n y o n a o t h e r th a n


    OCR Scan     		PDF NE--046 MIL-STD-1344A RJMG16XXXXXX1XX RJMG16XXX8XX1XX 0-KN-21 RJMG16XXX 2t512 NE045

    lm733

    Abstract: light to voltage converter from luxmeter photodiode application luxmeter LM733P
    Text: Application Circuit Examples 1 Low noise light-sensitive preamplifier Used in receivers for spatial light transm ission and optical remote control. A reverse bias is applied to the photodiode to improve frequency response. This circuit can also be used for interface to an am plifier with a low input resistance.


    OCR Scan     		PDF AD549, 755N/P, PA111, OPA128, OPA620, OPA633, LF357, LF356, LF442, HA2625, lm733 light to voltage converter from luxmeter photodiode application luxmeter LM733P

    diode B14A

    Abstract: B14A B14A diode crystal diode if6 hall hall o4E DIODO LK diodo FAG 50 FAG 50 diode FAG 32 diode
    Text: MIL SPECS IC|D00D15S 0D00L.S2 S | « 1^ - 19500/91 31^ A»eod»cnt 1 1 M y i960 KXLITARI STFEUFICATIO SDdCOOTWCTOT DEVICE DIODE, SILICOTI, POWER RECTIFUR TXTE W2153 Thla Ancndment forme a part of Military ' Specification KIL-S-19500/9HS1kC j, 2 No t 59 Page 1, paragraph 1.1 table., (l (surge) column: Delete "50" pertaining to


    OCR Scan     		PDF 0000bS2 KIL-S-195O0/9l 1JJ2I53 KIL-S-19500/91 N2I53 diode B14A B14A B14A diode crystal diode if6 hall hall o4E DIODO LK diodo FAG 50 FAG 50 diode FAG 32 diode

    Untitled

    Abstract: No abstract text available
    Text: 24FC32 M icrochip 32K 5.0V 1 MHz CMOS Serial EEPROM FEATURES PACKAGE TYPE • Voltage operating range: 4.5V to 5.5V - Maximum write current 3 mA at 5.5V - Maximum read current 150 jiA at 5.5V - Standby current 1 |iA typical • 1 MHz SE2.bus two wire protocol


    OCR Scan     		PDF 24FC32 DS21126A-page