AR98 Search Results

240CT97

Contextual Info: 4 THIS DRAWING C IS C O P Y R IG H T 3 U N P U B L IS H E D . RELEASED BY 19 AMP IN COR POR ATE D. FOR ALL PUBLICATION R IG H T S 2 ,19 LOC R ES ER V ED . D IS T AF : revisio n 50 DESCRIPTION L TR REVISED PER 0G1A-0069-98 DATE DWN AP VD AR98 MF KR C O N T I N U O U S S T R I P ON R 5 5 L S

HY57V168

Abstract: hy57v168010 1sd31 66MHz
Contextual Info: - H Y U N D A I > -• H Y 5 7 V 1 6 8 0 1 0 C 2 Banks x 1M X 8 Bit Synchronous DRAM DESCRIPTION The Hyundai H Y57V 168010C is a 1 6 ,7 7 7 , 216-bits C M OS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. H Y 57V 168010C is organized as 2banks of

Contextual Info: 7 T H IS D R A W IN G IS U N P U B L IS H E D . RELEASED ALL C O P YR IG H T 2005 BY TYCO ELE C TR O N IC S FO R 6 5 4 3 2 P U B L IC A T IO N R IG H T S REV IS ION S RESERVED. AD C O RP O RA TIO N. 47 D E S C R IP T IO N P GP DRD 10NO V05 REVISED PER EC OS12 - 0 5 5 3 - 0 4

AMP187

Contextual Info: LOC D RAWI NG T H I5 MADE DRAWING COPYRIGHT IN THIRD ANGLE 15 U N P U B L IS H E D . 19 BY AMP | R ELEA5ED FOR P U B L IC A T IO N ] NCORPORAT ED , HARR ISBU RG , P A . RESERVED. A M P PRODUCTS MAY BE COVERED BY U . S . A LL IN TER N A TIO N A L RIG HTS

Contextual Info: SUD30N04-10 Vishay Siliconix N-Channel 40-V D-S , 175°C MOSFET New Product PRODUCT SUMMARY Id r DS(on) (-2) V (BR)DSS (V ) (A) 0 .0 1 0 @ V GS = 10 V 30 a 0.014 @ VGS = 4.5 V 30 a 40 D Q TO-252 o Jl nr G D Drain C onnected to Tab S Top View o s O rder Number:

Contextual Info: 6 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED ALL C O P Y R IG H T 2005 BY TYCO E LE C T R O N IC S FO R 5 4 3 2 P U B L IC A T IO N R IG H T S R E V IS IO N S RESERVED. AD C O R P O R A TIO N . D E S C R IP T IO N R R E V IS E D PER 29APR08 EC O -08-009495

T211T

Abstract: nkl capacitor
Contextual Info: -'MYUH DAI -• HY57V651620A 4 Banks x 1M x 16 B it Synchronous DRAM DESCRIPTION The Hyundai HY57V651620A is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth, HY57V651620A is organized as 4banks ot

tyco PA66 GF 25

Abstract: R1378 QF32 T 318 TE 2395 R4001 8907K566 T65 5e4 Switch tyco PA66 GF 10 Tyco PA66 series 215201
Contextual Info: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T B Y TYCO E L E C T R O N IC S 2 P U B L IC A T IO N R IG H T S R E V IS IO N S RESERVED. C O R P O R A T IO N . D E S C R IP T IO N R E VIS E D P ER ECO- 24JAN 08 -002005

Contextual Info: 6 7 THIS JÊL DRAWING C O P Y R IG H T 15 U N P U B L IS H E D . 19 RELEASED BY AMP IN COR POR ATE D. FOR ALL 2 3 , 19 PUBLICATION R IG H T S 4 5 LOC R ES ER V ED . AF DI ST REVISIONS 50 DESCRIPTION REV 1r - ^ 1 r> FI k/ J? [. 10 + 0 . 12 — 240+ . 005] 3.10

dec mer

Abstract: MTA-100
Contextual Info: DRAWING THIS MADE DRAWING 7 IN IS 4 THIRD ANGLE UNPUBLISHED. COPYRIGHT RELEASED 19 AN P BY 2 3 PROJECTION <3> FOR PUBLICATION INCORPORATED. ALL INTERNATIONAL RIGHTS DI ST LOC ,19 CM RESERVED. 54 REV I 5 I0N 5 P F ZONE LTR DESCRIPTION R REACT -4 PER DATE

8L-10L

Contextual Info: MITSUBISHI LSIs SDRAM Rev.1.3 ar98 M5M4V64S20ATP-8A,-8L,-8, -10L, -10 64M (4-BANK x 4194304-WQRD x 4-BIT) Synchronous DRAM Some of contents are subject to change without notice. PIN CONFIGURATION (TOP VIEW) DESCRIPTION The M5M4V64S20ATP is a 4-bank x 4194304-word x 4-bit