Miniature glass fuses color coding
Abstract: DC 12V 20A SINGLE POLE MCB thermal fuses color coding fast acting circuit breakers mcb DC 12V 25A SINGLE POLE MCB BLC-100 FL-552 Miniature fuses color coding LPX-02 LPR-03
Text: FUSES - Auto Glass Voltage Rating: 32V AC/DC 250V can be substituted FSH FSH (1 AG) 1A – 30A (1/4” x 5/8”) FSW FSW (7 AG) 1A – 30A (1/4” x 7/8”) FSX FSX APG (8 AG) 2A – 30A (1/4” x 1”) APG (European) 5A – 25A (Torpedo Shaped, Color Coded)
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A-30A
32VDC
DesiAPR-K-80
APR-10A
APR-15A
APR-20A
APR-25A
APR-30A
APM-K-80
Miniature glass fuses color coding
DC 12V 20A SINGLE POLE MCB
thermal fuses color coding
fast acting circuit breakers mcb
DC 12V 25A SINGLE POLE MCB
BLC-100
FL-552
Miniature fuses color coding
LPX-02
LPR-03
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SONY APS 172 power supply
Abstract: D25VB SONY APS 186 power supply
Text: Transmission Digital Signal Processor IC for Infrared Spatial Digital Audio Communication CXD4016R Description The CXD4016R is an IC that processes the transmitted digital signals used for infrared spatial digital audio communication based on the IEC61603-8-1 standard in consumer products. This IC contains the digital-toanalog converter (DAC) and a PLL circuit for RF signal. RF signal is processed by digital signal processing, so
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CXD4016R
CXD4016R
IEC61603-8-1
32kHz,
48kHz)
64PIN
P-LQFP64-10X10-0
LQFP-64P-L023
SONY APS 172 power supply
D25VB
SONY APS 186 power supply
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M9-1-103J
Abstract: TLR124 IL-2P-S3EN2 SONY APS 240 power supply tlg124 SONY APS 172 power supply APS 240 Sony 1s1588 tlg124a Kyocera Kinseki CRYSTAL CX
Text: Transmission Digital Signal Processor IC for Infrared Spatial Digital Audio Communication CXD4016R Description The CXD4016R is an IC that processes the transmitted digital signals used for infrared spatial digital audio communication based on the IEC61603-8-1 standard in consumer products. This IC contains the digital-toanalog converter (DAC) and a PLL circuit for RF signal. RF signal is processed by digital signal processing, so
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CXD4016R
CXD4016R
IEC61603-8-1
32kHz,
48kHz)
outD4016R
64PIN
P-LQFP64-10X10-0
LQFP-64P-L023
M9-1-103J
TLR124
IL-2P-S3EN2
SONY APS 240 power supply
tlg124
SONY APS 172 power supply
APS 240 Sony
1s1588
tlg124a
Kyocera Kinseki CRYSTAL CX
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M9-1-103J
Abstract: TLR124 tlg124a CXA3504 tlg124 Diode TLG124 tl7705C TL7705CP SONY 171 TLY124
Text: CXD4017R Reception Digital Signal Processor IC for Infrared Spatial Digital Audio Communication Description The CXD4017R is an IC that processes the received digital signals used for infrared spatial digital audio communication based on the IEC61603-8-1 standard in consumer products. This IC contains the
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CXD4017R
CXD4017R
IEC61603-8-1
ga4017R
64PIN
P-LQFP64-10X10-0
LQFP-64P-L023
M9-1-103J
TLR124
tlg124a
CXA3504
tlg124
Diode TLG124
tl7705C
TL7705CP
SONY 171
TLY124
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TL7705CP
Abstract: M9-1-103J APS 240 Sony TLR124 1S1588 DAPD tlg124 IEC61603-8-1 IL-2P-S3EN2 TL7705CP pin out
Text: 赤外線空間デジタルオーディオ伝送用送信デジタル信号処理 CXD4016R 概要・用途 CXD4016Rは，民生機器向けの赤外線空間デジタルオーディオ伝送 IEC61603-8-1準拠 用の送信デジタル信号 処理ICで，RF用D／Aコンバータ，PLLを内蔵しています。全デジタル信号処理により無調整で安定した動作
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CXD4016R
IEC61603-8-1)
32kHz,
48kHz)
640fs)
J03Z16D64
TL7705CP
M9-1-103J
APS 240 Sony
TLR124
1S1588
DAPD
tlg124
IEC61603-8-1
IL-2P-S3EN2
TL7705CP pin out
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Untitled
Abstract: No abstract text available
Text: N AMER PH IL IPS /DI SCRE TE b^E ]> bbS3T31 0033444 SST OM361 APX _ / V _ HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER Three-stage wide band amplifier in hybrid integrated circuit technique on a thin-film substrate,
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bbS3T31
OM361
0Q3S44fl
bb53T31
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philips 4859
Abstract: No abstract text available
Text: Philips Semiconductors bbS3T31 D05SB11 D1S • APX N AMER PHILIPS/DISCRETE Product specification b?E D NPN 9 GHz wideband transistor FEATURES c BFR505 PINNING • High power gain PIN DESCRIPTION • Low noise figure Code: N30 • High transition frequency
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bbS3T31
D05SB11
BFR505
BFR505
philips 4859
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Untitled
Abstract: No abstract text available
Text: bbS3T31 0027264 T22 bTE D N AUER PHILIPS/DISCRETE ^ APX BT148W SERIES J THYRISTORS Glass-passivated, sensitive-gate thyristors in SOT-223 plastic envelopes suitable for surface mounting. They are intended for general purpose switching and phase-control applications.
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bbS3T31
BT148W
OT-223
BT148W-400R
OT-223
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Transistor D 1881
Abstract: PMBTH10 PMBTH81 d 1879 TRANSISTOR
Text: bhSBTai Philips Semiconductors GG^STOü bOt APX Product specification NPN 1 GHz general purpose switching transistor aher PMBTH10 PHILIPS/D ISCRETE FEATURES PINNING • Low cost PIN • High power gain. b?E ]> DESCRIPTION Code: V30 1 base D ESCRIPTION 2 emitter
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PMBTH10
PMBTH10
PMBTH81.
cur00
Transistor D 1881
PMBTH81
d 1879 TRANSISTOR
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BZT03 27
Abstract: C82 diode BZT03 BZT03-C510 BZT03-C7V5 C100 C110 C8V2 DIODE C3331
Text: N AMER PHILIPS/DISCRETE bbS3^31 b'îE D 00Eb7E'ì 757 • APX BZT03 SERIES I REGULATOR DIODES Glass passivated diodes in hermetically sealed axial-leaded glass envelopes. They are intended for use as voltage regulator and transient suppressor diode in medium power regulation and transient suppres
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00Eb7EcÃ
BZT03
BZT03-C7V5
BZT03-C510
OD-57.
QDSb733
BZT03 27
C82 diode
C100
C110
C8V2 DIODE
C3331
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BLW95
Abstract: SOT-121A IEC134 sot121a
Text: N AMER PHILIPS/DISCRETE bTE » • bbS3T31 DOS'iSGb QbT ■ APX BLWyü H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-AB operated high power industrial and m ilita ry transm itting equipment in the h.f. band. The transistor presents excellent performance as a
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bbS3T31
20-his
BLW95
7z77903
BLW95
SOT-121A
IEC134
sot121a
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t07 transistor
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bTE D APX bbS3T31 0028832 T07 BLU30/28 • UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and emitter ballasting resistors for an optimum temperature profile
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bbS3T31
BLU30/28
BLU30/28
OT119)
t07 transistor
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BZT03 27
Abstract: BZT03-C510 C82 diode BZT03 BZT03-C7V5 C100 C110 C120 C130 C150
Text: N AMER PH IL IPS/DISCRET E b'îE D bbS3^31 GGEbTET 7S7 • APX I BZT03 SERIES REGULATOR DIODES Glass passivated diodes in hermetically sealed axial-leaded glass envelopes. They are intended fo r use as voltage regulator and transient suppressor diode in medium power regulation and transient suppres
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BZT03
BZT03-C7V5
BZT03-C510
OD-57.
BZT03 27
C82 diode
C100
C110
C120
C130
C150
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Untitled
Abstract: No abstract text available
Text: • b b S B ' m 002432b S3T ■ APX P h ilip ^ e m ic o n d u c to re N AMER PHILIPS/DISCRETE b?E T> Product specification Silicon planar epitaxial high-speed diode DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching
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002432b
BAS678
243pF
J10MO
7Z73212
7Z69086
BAW62
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BC875
Abstract: BC879 c 879 transistor BC876 BC880 BC879 darlington BC877 BC878
Text: b SE D • N AUER bbS3^31 BC875 BC877 BC879 APX []027hG2 SI D PHILIPS/DISCRETE V SMALL-SIGNAL DARLINGTON TRANSISTORS NPN epitaxial small-signal Darlington transistors, each in a plastic TO-92 envelope with an integrated diode and resistor. They can be used for general purpose low frequency applications and as relay drivers etc.
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027hG2
BC875
BC877
BC879
BC876,
BC878,
BC880.
DD27hD4
BC879
c 879 transistor
BC876
BC880
BC879 darlington
BC878
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors bbSBTBl 0025104 251 H A P X Product specification PNP 1 GHz switching transistor ^— ^ “ N AUER PHILIPS/DISCRETE FEATURES PINNING • Low cost PIN 1 The PMBTH81 is a general purpose silicon pnp transistor, encapsulated in a SOT23 plastic envelope. Its
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PMBTH81
PMBTH81
PMBTH10.
MRA567
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MGA018
Abstract: 305 5VL c7v5 C510 C82 diode c82 004 mga01 Philips MBB working of voltage regulator BZD23-C3V6
Text: N AMER PHILIPS/DISCRETE t'JE J> bb53T31 002b711 51? * A P X m Philips Sem iconductors Voltage regulator diodes DESCRIPTION Glass-passivated diodes in hermetically sealed axial-leaded implosion diode ID glass envelopes. They are intended for use as voltage regulator and
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BZD23
BZD23-C3V6
C7V5-C510
BZD23-C7V5
MQA020
MGA018
305 5VL
c7v5
C510
C82 diode
c82 004
mga01
Philips MBB
working of voltage regulator
BZD23-C3V6
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BT148W Series
Abstract: 500R 600R BT148W BT148W-400R
Text: N AUER PHILIPS/ DISCRETE L^E D • bbSBTai 0027204 T22 H A P X I BT148W SERIES V THYRISTORS Glass-passivated, sensitive-gate thyristors in SOT-223 plastic envelopes suitable fo r surface mounting.
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GD27PfiM
BT148W
OT-223
BT148W-400R
OT-223
BT148W Series
500R
600R
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philips blx15
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b^E ]> • b b S B ' m PDE^S74 bOO « A P X BLX15 _ A H.F./V.H.F. POWER TRANSISTOR Silicon n-p-n power transistor for use in industrial and military s.s.b. and c.w. equipment operating in the h.f. and v.h.f. band:
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BLX15
7Z67664
philips blx15
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Untitled
Abstract: No abstract text available
Text: • bb53tm □ □ Eb7T3 bS2 H A P X N AMER PHILIPS/DISCRETE BZW 03 S E R IE S b^E D REGULATOR DIO DES Glass passivated diodes in hermetically sealed axial-leaded glass envelopes. They are intended for use as voltage regulator and transient suppressor diode in medium power regulation and transient suppression
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bb53t
03-C510
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BZD23
Abstract: c6v8 C510 bje 66 C82 diode BZD23-C3V6 BZD23-C7V5 C100 C110 C120
Text: N AUER PHILIPS/DISCRETE b=iE D ^ 5 3 ^ 3 1 DDEb?ll 517 Philips Semiconductors_ r IVM uwt Voltage regulator diodes DESCRIPTION Glass-passivated diodes in hermetically sealed axial-leaded implosion diode ID glass envelopes. They are intended for
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bb53131
BZD23
BZD23-C3V6
BZD23-C7V5
C7V5-C510
bb53T31
D02ti713
MGA020
c6v8
C510
bje 66
C82 diode
C100
C110
C120
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors fc>b53T31 002478*1 347 « A P X N AUER PHILIPS/DISCRETE NPN 5 GHz wideband transistor FEATURES • Product specification L.7E D £ BFG25A/X PINNING Low current consumption 100 g A - 1 mA PIN DESCRIPTION Code: V11 • Low noise figure
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b53T31
BFG25A/X
BFG25A/X
OT143.
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Bz027
Abstract: C510 C82 diode BZD27 c82 004 BZD27-C3V6 BZD27-C7V5 C100 C270 C7V5
Text: Philips Sem icpnductors DD 2b 72D 52T BBAPX Product specification Voltage regulator diodes BZD27 series N AMER PHILIPS/DISCRETE DESCRIPTION Glass-passivated diodes in hermetically sealed leadless surlace mounted implosion diode SMID glass envelopes. They are intended
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QQ2b72G
BZD27
BZD27-C3V6
BZD27-C7V5
C7V5-C510
MSA020
0D2b72fl
S0D87.
Bz027
C510
C82 diode
c82 004
C100
C270
C7V5
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GS 78L05 N
Abstract: No abstract text available
Text: Philips Semiconductors b b S 3 T 31 7 ? a • Ap X ^P ro d u ctsp ecificat^ VHF push-pull power MOS transistor N AUER PHILIPS/DISCRETE BLF248 bR E D PIN CONFIGURATION FEATURES • High power gain • Easy power control 1 • Good thermal stability /~i • Gold metallization ensures
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BLF248
OT262
MCB627
GS 78L05 N
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