APX 1400 POWER AMPLIFIER Search Results

APX 1400 POWER AMPLIFIER Result Highlights (5)

Part	Manufacturer	Description
TC75S102F	Toshiba Electronic Devices & Storage Corporation	Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25
TPH1400CQH	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 150 V, 32 A, 0.0141 Ω@10 V, SOP Advance(N)
TPH1400CQ5	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 150 V, 32 A, 0.0141 Ω@10 V, High-speed diode, SOP Advance(N)
TPD4164F	Toshiba Electronic Devices & Storage Corporation	Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=600 V / Iout=2 A / HSSOP31
TPD4164K	Toshiba Electronic Devices & Storage Corporation	Intelligent power device (High voltage PWM DC brushless motor driver) / VBB=600 V / Iout=2 A / HDIP30

APX 1400 POWER AMPLIFIER Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
philips bfq23 Abstract: BFQ23 BFR91A the pin function of ic 7423 BFR91A transistor transistor 9634 Text: Philips Sem iconductors ^ 5 3 ^ 3 1 0 D 3 1 5 13 T7T H A P X Product specification PNP 5 GHz wideband transistor BFQ23 N AMER PHILIPS/DISCRETE DESCRIPTION PINNING PNP transistor in a plastic SOT37 envelope, primarily intended for use in UHF and microwave amplifiers,	OCR Scan	BFQ23 BFR91A. philips bfq23 BFQ23 BFR91A the pin function of ic 7423 BFR91A transistor transistor 9634	PDF
MB87S Abstract: No abstract text available Text: • bbS3R31 0 0 2 ^ 5 b 7bS « A P X “ N AUER PHILIPS/DISCRETE b7E D NPN 8 GHz wideband transistor DKT c ^ Philips Semiconductors DESCRIPTION Product specification BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications.	OCR Scan	bbS3R31 BFG198 OT223 MB87S	PDF
CD074 Abstract: No abstract text available Text: bb53T31 D DES IS1! D01 Philips Semiconductors N AMER PHI LIP S/DISCRETE APX NPN 5 GHz wideband transistor FEATURES Product specification b7E D £ BFR92A PINNING PIN DESCRIPTION • High power gain • Low noise figure • Low Intermodulation distortion 1 base	OCR Scan	bb53T31 BFR92A BFT92. CD074	PDF
Untitled Abstract: No abstract text available Text: LbSBTBl QQE5Q33 TIM Mi A P X Product specification N AMER PHILIPS/DISCRETE b7E » NPN 9 GHz wideband transistor BFG541 Philips Semiconductors FEATURES PINNING • High power gain PIN • Low noise figure 1 emitter DESCRIPTION • High transition frequency	OCR Scan	QQE5Q33 BFG541 OT223.	PDF
TRANSISTOR c 5578 B Abstract: 603 transistor npn Text: PhHjP^emjconductor^^ _ bbSBTBl 0 0 3 1 4 bT T3 E • A P X ^Productspecification NPN 5 GHz wideband transistor — DESCRIPTION BFP90A H AriER PHILIPS/DISCRETE blE ] PINNING NPN transistor in hermetically sealed, sub-miniature SOT173and SOT173X micro-stripline envelopes. It is	OCR Scan	BFP90A OT173and OT173X TRANSISTOR c 5578 B 603 transistor npn	PDF
transistor 667 Abstract: No abstract text available Text: ^^53^31 0035133 404 APX Philips S em iconductors Product specification N AHER PHILIPS/DISCRETE NPN 6 GHz wideband transistor FEATURES • L7E 1 e BFR93A PINNING PIN High power gain DESCRIPTION • Low noise figure • Very low intermodulation distortion 2	OCR Scan	BFR93A BFT93. transistor 667	PDF
lc 945 p transistor NPN TO 92 Abstract: 6B2 transistor BFQ51 B 1446 transistor BFR90A C 3355 transistor Text: 0031S7Û Philips Semiconductors TEL H A P X Product specification PNP 5 GHz wideband transìstor ^ BFQ51 • N AMER PHILIPS/DISCRETE DESCRIPTION b'îE T> PINNING PNP transistor in a plastic SOT37 envelope. It is primarily intended for use in RF amplifiers such as In aerial	OCR Scan	0031S7Ã BFQ51 BFR90A. lc 945 p transistor NPN TO 92 6B2 transistor BFQ51 B 1446 transistor BFR90A C 3355 transistor	PDF
iw 1688 Abstract: 7812 philips 227 1112 2t6 551 BFR540 BFS540 UBC870 TRANSISTOR D 1765 738 transistor BF 697 Transistor MJE 5331 Text: Philips Semiconductors 0 0 3 2 0 b ti 5^7 • APX Product specification NPN 9 GHz wideband transistor BFS540 N AUER PHILIPS/DISCRETE FEATURES b^E » 1 PIN CONFIGURATION PIN • High power gain DESCRIPTION Code: N4 • Low noise figure • High transition frequency	OCR Scan	GG350bfci BFS540 OT323 UBC870 OT323. collect-176 iw 1688 7812 philips 227 1112 2t6 551 BFR540 BFS540 UBC870 TRANSISTOR D 1765 738 transistor BF 697 Transistor MJE 5331	PDF
B 773 transistor Abstract: No abstract text available Text: bbSBSSl 00E4774 'lib « A P X Philips Semiconductors Product specification NPN 2 GHz wideband transistor BFG16A N APIER PHILIPS/DISCRETE FEATURES b7E D PINNING PIN • High power gain DESCRIPTION • Good thermal stability 1 emitter • Gold metallization ensures	OCR Scan	00E4774 BFG16A OT223 B 773 transistor	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors ^ 53^ 31 0031bDb b lO M APX Product specification NPN 8 GHz wideband transistor ^ BFQ66 N DESCRIPTION AUER PHILIPS/DISCRETE b'lE » PINNING Small-signal planar epitaxial NPN transistor in hermetically-sealed sub-miniature SOT173 and	OCR Scan	0031bDb BFQ66 OT173 OT173X	PDF
TRANSISTOR ML6 Abstract: TRANSISTOR ML5 resistor MR25 philips philips MR25 resistor MR25 plate capacitor BFQ270 Miniature Ceramic Plate Capacitor Philips 2222 344 capacitors resistor 240 Text: Philip^emiconductor^^ • bb53T31 GG3177E E7T ■ A P X ^Productspeclflcatlon NPN 6 GHz wideband transistor ^ BFQ270 N FEATURES h^Z » AUER PHILIPS/DISCRETE PINNING PIN • High power gain • Emitter-ballasting resistors for good thermal stability • Gold metallization ensures	OCR Scan	DD3177E BFQ270 OT172A1 OT172A1. TRANSISTOR ML6 TRANSISTOR ML5 resistor MR25 philips philips MR25 resistor MR25 plate capacitor BFQ270 Miniature Ceramic Plate Capacitor Philips 2222 344 capacitors resistor 240	PDF
TRANSISTOR D 2627 Abstract: D 4206 TRANSISTOR BFQ135 transistor 224-1 base collector emitter DIN45004B bfq135 scattering 1817 transistor 1348 transistor TRANSISTOR C 2570 c 2570 transistor Text: P hilip^Sem iconductor^^^^ I I bbS 3 cJ3 1 0 0 3 1 Li Li 5 1 5 'J H i APX Product specification NPN 6.5 GHz wideband transistor BFQ135 N DESCRIPTION AMER P H IL IP S /D IS C R E T E bTE PINNING NPN transistor in a 4-lead dual-emitter SOT172A1 envelope with a ceramic cap. All leads are	OCR Scan	BFQ135 OT172A1 OT172A1. SYMB69 TRANSISTOR D 2627 D 4206 TRANSISTOR BFQ135 transistor 224-1 base collector emitter DIN45004B bfq135 scattering 1817 transistor 1348 transistor TRANSISTOR C 2570 c 2570 transistor	PDF
BFG540 Abstract: transistor N43 Text: Philips Semiconductors • bb53cl31 0D25011 253 « A P X Product specification N AMER PHILIPS/DISCRETE b7E D NPN 9 GHz wideband transistor £ BFG540; BFG540/X; BFG540/XR FEATURES PINNING PIN High power gain • Low noise figure • High transition frequency	OCR Scan	bb53c 0D25011 BFG540; BFG540/X; BFG540/XR BFG540 MATV/CAT155 BFG540 transistor N43	PDF
TRANSISTOR C 4460 Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ TRANSISTOR c 5578 SOT173 BFP90A 1702 NPN transistor IN 5408 ZG TRANSISTOR D 471 1346 transistor c 3421 transistor Text: P h jJ jP ^ e m jç o n d u c to r^ ^ bbS 3 T31 □Q 3 1 4 b eì T 3E M APX Product specification NPN 5 GHz wideband transistor BFP90A H DESCRIPTION A f lE R p H I L I p S / ] > IS < ; R E ; TE: bTE PINNING NPN transistor in hermetically sealed, sub-miniature	OCR Scan	OT173 OT173X BFP90A OT173. OT173X. TRANSISTOR C 4460 RF NPN POWER TRANSISTOR C 10-12 GHZ TRANSISTOR c 5578 SOT173 BFP90A 1702 NPN transistor IN 5408 ZG TRANSISTOR D 471 1346 transistor c 3421 transistor	PDF

BFG96 Abstract: No abstract text available Text: P hilips Sem iconductor; bbS3T31 0031ST2 553 M A P X Product specification BFG96 NPN 5 GHz wideband transistor bit N AUER PHILIPS/5ISCRETE DESCRIPTION » PINNING NPN transistor in a 4-lead dual-emitter plastic SOU 03 envelope. DESCRIPTION PIN It is designed for application in	OCR Scan	bbS3T31 0031ST2 BFG96 BFG32. OT103. BFG96	PDF
Untitled Abstract: No abstract text available Text: P h ilip ^ e m ic o n d u c to r^ ^ ^ • b b 5 3 T 31 Q0 3 1 b b 5 1ST H i APX Product specification NPN 6.5 GHz wideband transistor ^ — DESCRIPTION BFQ135 N AMER PHILIPS/DISCRETE bTE D PINNING NPN transistor in a 4-lead dual-emitter SOT172A1 envelope with a ceramic cap. All leads are	OCR Scan	BFQ135 OT172A1	PDF
bfr91a Abstract: No abstract text available Text: Philips Semiconductors b b S B ^ l 0031AEO AS2 H A P X Product specification BFR91A NPN 6 GHz wideband transistor N AUER PHILIPS/DISCRETE FEATURES b'lE ]> PINNING PIN • Low noise • Low intermodulation distortion • High power gain • Gold metallization.	OCR Scan	0031AEO BFR91A BFR91A/02 ON4185) BFQ23. bfr91a	PDF
BFG65 Abstract: transistor 3702 558 npn MSB037 4221 transistor D 1414 transistor MBB332 Text: Philips Semiconductors b b S B 'ÌB l G0 3 i n 3 SCH • AP X Product specification NPN 8 GHz wideband transistor — — — — BFG65 N APIER P H IL IP S /D IS C R E T E b'JE ]> DESCRIPTION NPN transistor in a four-lead dual emitter plastic envelope SOT103 .	OCR Scan	BFG65 OT103) MSB037 OT103. BFG65 transistor 3702 558 npn MSB037 4221 transistor D 1414 transistor MBB332	PDF
tam 0340 Abstract: No abstract text available Text: b b 53^31 Philips Semiconductors □ □ 31 S 7 S TEb H A P X Product specification PNP 5 GHz wideband transistor 1 DESCRIPTION « N ArlER BFQ51 p h x l x p s / d i s CRETE b 'lE » PINNING PNP transistor in a plastic SOT37 envelope. It is primarily intended for use in RF	OCR Scan	BFQ51 BFR90A. tam 0340	PDF
transistor t4B Abstract: BFP91A tag 8726 BFQ23C Tag c0 665 800 transistor d 1557 0D31521 1557 transistor SOT173 SOT173 RF transistor Text: i Philips Semiconductors 53*131 ^ DD31SE 1 T4b M i APX Product specification PNP 5 GHz wideband transistor . — — DESCRIPTION BFQ23C N AWER PHILIPS/DISCRETE PINNING PNP transistor in hermetically-sealed, sub-miniature, SOT 173 and SOT173X micro-stripline envelopes. It is	OCR Scan	0D31521 BFQ23C OT173 OT173X BFP91A. transistor t4B BFP91A tag 8726 BFQ23C Tag c0 665 800 transistor d 1557 1557 transistor SOT173 SOT173 RF transistor	PDF
transistor BFR91A Abstract: on 5295 transistor BFR91A BFR91A transistor BFQ23 bfr91a to92 transistor 1548 b TRANSISTOR BI 187 ON4185 EC 401 TRANSISTOR Text: Philips Semiconductors bbS3T31 00 3 1Ö 2 0 ÔS5 M AP X Product specification BFR91A NPN 6 GHz wideband transistor b'ìE T> N AMER PHILIPS/DISCRETE FEATURES PINNING PIN • Low noise • Low intermodulation distortion • High power gain • Gold metallization.	OCR Scan	bbS3T31 BFR91A ON4185) BFQ23. transistor BFR91A on 5295 transistor BFR91A BFR91A transistor BFQ23 bfr91a to92 transistor 1548 b TRANSISTOR BI 187 ON4185 EC 401 TRANSISTOR	PDF
bfg91a Abstract: transistor kt 801 MBS330 transistor 446-1 1SS TRANSISTOR transistor kt 326 FP 801 transistor SOT103 transistor C 2290 Text: PhHip^emiconductor^^^ • bbS3T31 0031233 T1S ■ APX^Productspecification NPN 6 GHz wideband transistor — ^ BFG91A N AHER PHILIPS/DISCRETE DESCRIPTION b*lE D PINNING NPN transistor in a 4-lead dual-emltter plastic SOT 103 envelope. PIN It is designed for application in	OCR Scan	G031233 BFG91A bfg91a transistor kt 801 MBS330 transistor 446-1 1SS TRANSISTOR transistor kt 326 FP 801 transistor SOT103 transistor C 2290	PDF
Philips FA 261 Abstract: No abstract text available Text: Philips Semiconductors N bbS B IB l AMER 0 0 2 5 TtiT M A P X PH ILIP S /D IS C R E TE Product specification b?E D NPN 9 GHz wideband transistor FEATURES BFS505 PIN CONFIGURATION PINNING PIN DESCRIPTION • Low current consumption • High power gain •	OCR Scan	BFS505 OT323 MBC87I0 OT323. OT323 Philips FA 261	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors fc>b53T31 002478*1 347 « A P X N AUER PHILIPS/DISCRETE NPN 5 GHz wideband transistor FEATURES • Product specification L.7E D £ BFG25A/X PINNING Low current consumption 100 g A - 1 mA PIN DESCRIPTION Code: V11 • Low noise figure	OCR Scan	b53T31 BFG25A/X BFG25A/X OT143.	PDF

APX 1400 POWER AMPLIFIER Search Results

APX 1400 POWER AMPLIFIER Result Highlights (5)

APX 1400 POWER AMPLIFIER Datasheets Context Search

philips bfq23

MB87S

CD074

Untitled

TRANSISTOR c 5578 B

transistor 667

lc 945 p transistor NPN TO 92

iw 1688

B 773 transistor

Untitled

TRANSISTOR ML6

TRANSISTOR D 2627

BFG540

TRANSISTOR C 4460

BFG96

Untitled

bfr91a

BFG65

tam 0340

transistor t4B

transistor BFR91A

bfg91a

Philips FA 261

Untitled