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    APTOS SEMICONDUCTOR Search Results

    APTOS SEMICONDUCTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    APTOS SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    "white led" phosphor

    Abstract: Asahi Rubber 6319425 AN-103 AN-104
    Text: AN-104 LED Packaging Primer BACKGROUND: With the explosion of LED packaging world wide, there are many young engineers rediscovering process problems associated with manufacturing LED products. This primer is an attempt to share many of the principles learned in this industry over the last 30+ years. We will look at some of the material and process


    Original     		PDF AN-104 "white led" phosphor Asahi Rubber 6319425 AN-103 AN-104

    L0812

    Abstract: A10C AP9A107B12TC ap9a107 ITT SHG 1,5 Hp 9347
    Text: * p to s AP9A107B SEMICONDUCTOR 128K x 8 High Speed CMOS Static RAM Features Aptos’ high-performance CMOS, double metal technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns (Max .


    OCR Scan     		PDF AP9A107B 32-Pin 28-Pin 300-Mil) 32-Pin 400-Mil) 44-Pin L0812 A10C AP9A107B12TC ap9a107 ITT SHG 1,5 Hp 9347

    Untitled

    Abstract: No abstract text available
    Text: Creation Date: October 8,1997 Revision Date: October 16, 1998 DtOS • s e m ic o n d u c t o r AP9B112/AP9B112L PRELIMINARY 3.3V, 128K x 8 Very High-Speed, Low-Power, CMOS Static RAM with Optional 2V Data Retention Aptos’ high-performance, 0.35|j, CMOS process technology.


    OCR Scan     		PDF AP9B112/AP9B112L

    812AD

    Abstract: V321
    Text: Creation Date: August 4, 1998 Revision Date: October 7, 1998 K p to s _ I e m i c o n d u c t o r AP9A110/AP9A110L PRELIMINARY 5V, 128K x 8 High Speed, Low-Power, CMOS Static RAM with Optional 2V Data Retention Aptos’ high-performance, 0.35|j, CMOS process technology.


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    Untitled

    Abstract: No abstract text available
    Text: Creation Date: March 21, 1996 Revision Date: October 13, 1998 DtOS AP9A107B • s e m ic o n d u c t o r 128K x 8 High Speed CMOS Static RAM Features Aptos’ high-performance CMOS, double metal technology. This highly reliable process coupled with innovative circuit


    OCR Scan     		PDF AP9A107B AP9A107B

    Untitled

    Abstract: No abstract text available
    Text: Creation Date: July 28, 1998 Revision Date: October 2, 1998 K ptos _ Iemiconductor A P 9 B 1 1 1 /A P 9 B 1 1 1 L PRELIMINARY 3.3V, 128K x 8 Very High Speed, Low-Power, CMOS Static RAM with Optional 2V Data Retention Aptos’ high-performance, 0.35|j, CMOS process technology.


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    Untitled

    Abstract: No abstract text available
    Text: Creation Date: July 30, 1998 Revision Date: October 7, 1998 K ptos _I e m i c o n d u c t o r AP9A111/AP9A111L PRELIMINARY 5V, 128K x 8 Very High Speed, Low-Power, CMOS Static RAM with Optional 2V Data Retention Aptos’ high-performance, 0.35|j, CMOS process technology.


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    Untitled

    Abstract: No abstract text available
    Text: Creation Date: April 9,1996 Revision Date: June 7,1996 ptos • semiconductor AP9A102B PRELIMINARY 256K x 4 High Speed CMOS Static RAM Features • • • • • • • • • Fast access times: 12, 15, 20 ns Fast output enable tpoE f°r cache applications


    OCR Scan     		PDF AP9A102B 000D30Ã

    PIN CONFIGURATION IC RT 3060

    Abstract: 06L09 32m25 Paver Components
    Text: ^•îeauun u a ic. re u iu a iy i y y n Revision: June 6, 1996 K lptos AP32M256 I SEMICONDUCTOR 256K x 32 Static RAM Module Features • High-density, 8-megabit, asynchronous Static RAM • Low profile SIMM or ZIP package and 72-Pin Gold SIMM package • High-speed, -15, -20 and -25 ns


    OCR Scan     		PDF AP32M256 64-pin 72-pin AP32M256 PIN CONFIGURATION IC RT 3060 06L09 32m25 Paver Components

    Aptos Semiconductor

    Abstract: M721 m72.1 simm 72 pinout
    Text: Creation Date: March 13, 1996 Revision: February 25, 1998 Kptos •sem ic o n d u c t o r _ A P 3 2 M 1 0 2 4 PRELIMINARY 1M x 32 Static RAM Module Features • High-density, 32-megabit, Static RAM Module • 32-bit standard footprint supports densities from


    OCR Scan     		PDF AP32M1024 72-pin 64pin AP32M128) AP32M1024) 32-megabit, Aptos Semiconductor M721 m72.1 simm 72 pinout

    Untitled

    Abstract: No abstract text available
    Text: Creation Date: May 14, 1996 Revision: February 25, 1998 Kptos AP32M512 PRELIMINARY • s e m ic o n d u c t o r 512K x 32 Static RAM Module Features • High-density, 32-megabit, Static RAM Module • 32-bit standard footprint supports densities from 128K x 32 through 1M x 32


    OCR Scan     		PDF AP32M512 AP32M512 72-pin 64pin AP32M128) AP32M1024) 32-megabit, 32-bit

    M722

    Abstract: No abstract text available
    Text: Creation Date: February 1994 Revision: March 20, 1997 Kptos •s e m ic o n d u c to r Features • High-density, 8-megabit, asynchronous Static RAM • Available in 64- or 72-Pin, Tin or Gold, SIMM and a 64-Pin ZIP • High-speed,-15,-20 and-25 ns • Single 5 V ± 10% power supply


    OCR Scan     		PDF AP32M256 AP32M256 M722

    9A104-15

    Abstract: AP9A104-12VC AP9A104-12TC ap9a104-12
    Text: Creation Date: 2/28/96 Revision: October 6, 1998 K lp to s _ AP9A104 • s e m ic o n d u c t o r 64K Features X 16 CMOS Static RAM the device is accomplished by bringing Chip Enable CE and Write Enable (WE) inputs LOW. If Byte Enable Low (BLE) is


    OCR Scan     		PDF AP9A104 44-pin, 400-mil 9A104-15 AP9A104-12VC AP9A104-12TC ap9a104-12

    T32.768

    Abstract: No abstract text available
    Text: Creation Date: March 2 1 ,1 9 96 Revision Date: June 7 ,1 9 9 6 A P 9 A 1 07 B 128K x 8 High Speed CMOS Static RAM PRELIMINARY Features A ptos’ high-performance CMOS, double metal technology. This highly reliable process coupled with innovative circuit design techniques, yields access tim es as fast as 12 ns Max .


    OCR Scan     		PDF 32-Pin T32.768

    Untitled

    Abstract: No abstract text available
    Text: Creation Date: May 19, 1998 Revision Date: October 2, 1998 DtOS ISEMICONDUCT« SEMICONDUCTOR AP9B102/AP9B102L PRELIMINARY 3.3V, 256K x 4 Very High-Speed, Low-Power CMOS Static RAM with Optional 2V Data Retention able process, coupled with innovative circuit design tech­


    OCR Scan     		PDF AP9B102/AP9B102L AP9B102/AP9B102L

    Aptos Semiconductor

    Abstract: No abstract text available
    Text: Revision Date: May 5, 1997 Kotos _AP9A405 • s e m ic o n d u c t o r 8192 x 9 Asynchronous CMOS FIFO Features word may consist of a standard eight-bit byte with a parity bit or block-marking/framing bit. • Fast access times: 20, 25, 35 ns


    OCR Scan     		PDF AP9A405 AP9A405 Aptos Semiconductor

    Untitled

    Abstract: No abstract text available
    Text: Siptos IsemIconductor AP29F040 PRELIMINARY 512K x 8 CMOS Flash EPROM Features • Low Vc c write inhibit < 3.2 V • Packaged in: 32-Pin PLCC and TSOP • 5 V ± 10% program and erase for low power consumption and simplified system design • JEDEC-standard software commands, pinout and package


    OCR Scan     		PDF AP29F040 32-Pin AP29F040-70JC AP29F040-70TC AP29F040-90JC AP29F040-90TC AP29F040-120JC AP29F040-120TC AP29F040-150JC AP29F040-150TC

    Untitled

    Abstract: No abstract text available
    Text: Creation Date: 2/28/96 Revision: 6/6/96 E l AP9A104 AP9B104 ADVANCED INFORMATION 5V and 3.3V, 64K x 16 CMOS Static RAM Features • Fast access times: 10, 12, 15, and 20 ns • Fast output enable access time: 3, 3, 5, and 6 ns • M ultiple center power and ground pins for improved


    OCR Scan     		PDF AP9A104 AP9B104 44-pin, 400-mil AP9A104-( AP9B104-

    AP9A128-15VC

    Abstract: ap9a128 AP9A128-12VC L0812
    Text: A P 9A 128 K p to s A P 9A 129 • SEMICONDUCTOR 32K x 8 High Speed CMOS Static RAM Features This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12ns Max . • • • • • • • Fast access times: 12, 15, 20 ns


    OCR Scan     		PDF AP9A128/9 768-word AP9A128 AP9A129 28-Pin 300-Mil) 32-Pin 400-Mil) 44-Pin AP9A128-15VC ap9a128 AP9A128-12VC L0812

    L0812

    Abstract: a1275 A-1275 2815AU AP9A127 AP9A127-8VC 2518N
    Text: *p to s AP9A127 • s e m ic o n d u c t o r 32K x 8 Very High Speed CMOS Static RAM Features • • • • • • • • When Chip Enable CE is HIGH, the device assumes a standby mode at which the power dissipation can be reduced down to 10 |iW (typical) at CMOS input levels.


    OCR Scan     		PDF AP9A127 28-Pin 300-Mil) 32-Pin 400-Mil) 44-Pin L0812 a1275 A-1275 2815AU AP9A127-8VC 2518N

    Untitled

    Abstract: No abstract text available
    Text: »Creation Date: February 1994 Revision Date: June 6 , 1996 Mptos _ AP32M128 • SEMICONDUCTOR 128K x 32 Static RAM Module Features • • • • • • All inputs and outputs of the AP32M128 are TTL-compatible and operate from a single 5V supply. Full asynchronous cir­


    OCR Scan     		PDF AP32M128 AP32M128

    AP9A128

    Abstract: AP9A128-12VC AP9A128-20VC AP9A128-15VC AP9A128-20TC DS00007
    Text: Revision: October 9, 1997 Kptos A P 9 A 1 2 8 _ A P 9 A 1 2 9 • s e m ic o n d u c t o r 32K x 8 High Speed CMOS Static RAM Features • • • • • • • Fast access times: 12, 15, 20 ns Fast output enable t^oE f°r cache applications


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    9A104-15

    Abstract: AP9A104-12 ap9a-104-12 AP9A104 AP9A104-12VC A14C Outline T44 L0812
    Text: Kptos AP9A104 •SEMICONDUCTOR 64K x 16 CMOS Static RAM Features • Fast access times: 10, 12, 15, and 20 ns • Fast output enable access time: 3,3, 5, and 6 ns • Multiple center power and ground pins for improved noise immunity • High-performance, low-power, CMOS double-metal


    OCR Scan     		PDF 44-pin, 400-mil AP9A104 28-Pin 300-Mil) 32-Pin 400-Mil) 9A104-15 AP9A104-12 ap9a-104-12 AP9A104-12VC A14C Outline T44 L0812

    Untitled

    Abstract: No abstract text available
    Text: Creation Date: October 9,1997 Revision Date: October 2, 1998 K ptos _ Iemiconductor AP9B110/AP9B110L PRELIMINARY 3.3V, 1 2 8 K x 8 H i g h -Speed, Low-Power, CMOS Static RAM with Optional 2V Data Retention performance, 0.35|j, CMOS process technology. This highly


    OCR Scan     		PDF AP9B110/is