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    APT8018L2VR Search Results

    APT8018L2VR Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT8018L2VR Advanced Power Technology High voltage N-Channel enhancement mode power MOSFET Original PDF
    APT8018L2VR Advanced Power Technology Power MOS V, 800V 43A, MOS-FET N-Channel enhanced Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: APT8018L2VR 0.180Ω 800V 43A POWER MOS V MOSFET L2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT8018L2VR O-264 O-264

    APT8018L2VR

    Abstract: No abstract text available
    Text: APT8018L2VR 800V 43A POWER MOS V MOSFET 0.180Ω L2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT8018L2VR O-264 O-264 APT8018L2VR

    Untitled

    Abstract: No abstract text available
    Text: APT8018L2VR 800V 43A 0.180W POWER MOS V TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT8018L2VR O-264 O-264

    400vpf

    Abstract: APT8018L2VR
    Text: APT8018L2VR 800V 43A POWER MOS V MOSFET 0.240Ω L2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT8018L2VR O-264 O-264 400vpf APT8018L2VR

    catalog mosfet Transistor smd

    Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
    Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance


    Original     		PDF

    mj 1504 transistor equivalent

    Abstract: ARF450 FREDFETs transistors mj 1504 APT1201R2BLL APT60GF120JRD APT60M75JVR APT100S20B APT4014BVR APT1208
    Text: 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance this position as


    Original     		PDF

    APT100GF60LR

    Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR
    Text: Discrete Power Products 2003 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of


    Original     		PDF