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    APT6011 Search Results

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    APT6011 Price and Stock

    Microchip Technology Inc APT6011B2VRG

    MOSFET N-CH 600V 49A T-MAX
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    DigiKey APT6011B2VRG Tube 30
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    Avnet Americas APT6011B2VRG Tube 26 Weeks 30
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    Mouser Electronics APT6011B2VRG
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    Newark APT6011B2VRG Bulk 30
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    Microchip Technology Inc APT6011B2VRG
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    Onlinecomponents.com APT6011B2VRG
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    TME APT6011B2VRG 1
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    NAC APT6011B2VRG Tube 14
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    Richardson RFPD APT6011B2VRG 30
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    Avnet Silica APT6011B2VRG 28 Weeks 30
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    EBV Elektronik APT6011B2VRG 27 Weeks 30
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    Master Electronics APT6011B2VRG
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    APT6011 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT6011B2VFR Advanced Power Technology High voltage N-Channel enhancement mode power MOSFET Original PDF
    APT6011B2VFR Microsemi Power MOS V FREDFET Original PDF
    APT6011B2VR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT6011B2VR Microsemi Power MOS V MOSFET Original PDF
    APT6011B2VRG Microchip Technology MOSFET N-CH 600V 49A T-MAX Original PDF
    APT6011LVFR Advanced Power Technology High voltage N-Channel enhancement mode power MOSFET Original PDF
    APT6011LVFR Microsemi Power MOS V FREDFET Original PDF
    APT6011LVR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT6011LVR Microsemi Power MOS V MOSFET Original PDF

    APT6011 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: APT6011B2VFR APT6011LVFR 600V 49A POWER MOS V FREDFET 0.110Ω B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT6011B2VFR APT6011LVFR O-264 O-264 APT6011B2VFR O-247

    Untitled

    Abstract: No abstract text available
    Text: APT6011B2VFR 600V POWER MOS V 49A 0.110W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT6011B2VFR MIL-STD-750

    APT6011B2VR

    Abstract: No abstract text available
    Text: APT6011B2VR APT6011LVR 600V 49A 0.110W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT6011B2VR APT6011LVR O-264 O-264 APT6011 O-247 APT6011B2VR

    Untitled

    Abstract: No abstract text available
    Text: APT6011B2VFR APT6011LVFR 600V 49A POWER MOS V FREDFET 0.110Ω B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT6011B2VFR APT6011LVFR O-264 O-264 APT6011B2VFR O-247

    Untitled

    Abstract: No abstract text available
    Text: APT6011B2VR APT6011LVR 600V 49A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT6011B2VR APT6011LVR O-264 O-264 APT6011B2VR O-247

    Untitled

    Abstract: No abstract text available
    Text: APT6011LVFR 600V POWER MOS V 49A 0.110W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT6011LVFR O-264 O-264

    Untitled

    Abstract: No abstract text available
    Text: APT6011B2VR APT6011LVR 600V 49A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT6011B2VR APT6011LVR O-264 O-264 APT6011B2VR O-247

    catalog mosfet Transistor smd

    Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
    Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance


    Original     		PDF

    APT10026JN

    Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
    Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		PDF MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR

    5017BVR

    Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		PDF MIL-PRF-19500 ISO9001 5017BVR 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60

    sot-227 footprint

    Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G
    Text: Power Semiconductors Power Modules & RF Power MOSFETs 2006 Power Products Group 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		PDF

    mj 1504 transistor equivalent

    Abstract: ARF450 FREDFETs transistors mj 1504 APT1201R2BLL APT60GF120JRD APT60M75JVR APT100S20B APT4014BVR APT1208
    Text: 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance this position as


    Original     		PDF

    APT6015LVR

    Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		PDF MIL-PRF-19500 ISO9001 APT6015LVR 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR

    APT100GF60LR

    Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR
    Text: Discrete Power Products 2003 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of


    Original     		PDF

    PULSE TRANSFORMER 949

    Abstract: APT-6012 computer smps circuit smps Hi-Pot
    Text: PULSE TRANSFORMER APT-6000 SERIES FEATURES: COMMON APPLICATIONS: • • • • • • Lan, WDN • Computers • SMPS Control Circuit Low Profile 6 Pin DIP Package Low Leakage Inductance Low Interwinding Capacitance High Isolation Voltage Meets MIL-STD 21038


    Original     		PDF APT-6000 APT-6001 APT-6002 APT-6003 APT-6004 APT-6005 APT-6006 APT-6007 APT-6008 PULSE TRANSFORMER 949 APT-6012 computer smps circuit smps Hi-Pot