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APT6010B2LL Price and Stock

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Microchip Technology Inc APT6010B2LLG MOSFET N-CH 600V 54A T-MAX
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	APT6010B2LLG	Tube			20	1 - 10 - 100 $27.18 1000 $27.18 10000 $27.18	Buy Now
Avnet Americas	APT6010B2LLG	Tube		26 Weeks	20	1 $25.4408 10 $25.4408 100 $21.24525 1000 $22.14833 10000 $22.14833	Buy Now
Mouser Electronics	APT6010B2LLG					1 $27.18 10 $27.18 100 $27.18 1000 $27.18 10000 $27.18	Get Quote
Newark	APT6010B2LLG	Bulk			20	1 $27.18 10 $27.18 100 $23.47 1000 $22.07 10000 $22.07	Buy Now
Microchip Technology Inc	APT6010B2LLG	Tube		26 Weeks		1 $27.18 10 $27.18 100 $23.47 1000 $21.54 10000 $20.82	Buy Now

Onlinecomponents.com	APT6010B2LLG					1 $25.96 10 $24.86 100 $21.79 1000 $21.14 10000 $21.14	Buy Now
TME	APT6010B2LLG				1	1 $39.3 10 $31.25 100 $31.25 1000 $31.25 10000 $31.25	Get Quote
NAC	APT6010B2LLG	Tube			14	1 $25.21 10 $25.21 100 $23.22 1000 $21.52 10000 $21.52	Buy Now
Richardson RFPD	APT6010B2LLG				20	1 - 10 - 100 $23.31 1000 $23.31 10000 $23.31	Buy Now
Master Electronics	APT6010B2LLG					1 $25.96 10 $24.86 100 $21.79 1000 $21.14 10000 $21.14	Buy Now

APT6010B2LL Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
APT6010B2LL		Advanced Power Technology	POWER MOS 7 600V 54A 0.100 Ohm		Original	PDF
APT6010B2LL		Advanced Power Technology	N-Channel enhancement mode power MOSFET		Original	PDF
APT6010B2LL		Unknown	Power MOS 7, 600V 54A, MOS-FET N-Channel enhanced		Original	PDF
APT6010B2LLG		Microsemi	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 54A T-MAX		Original	PDF

APT6010B2LL Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
APT6010LLLG Abstract: APT6010B2LL APT6010LLL Text: Ω 0.100Ω 600V 54A APT6010B2LL APT6010LLL APT6010B2LL* APT6010LLLG* *G POWER MOS 7 R Denotes RoHS Compliant, Pb Free Terminal Finish. MOSFET B2LL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching	Original	PDF	APT6010B2LL APT6010LLL APT6010B2LL* APT6010LLLG* O-264 APT6010LLLG APT6010B2LL APT6010LLL
Untitled Abstract: No abstract text available Text: APT6010B2LL APT6010LLL 600V 54A 0.100W B2LL POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON	Original	PDF	APT6010B2LL APT6010LLL O-264 O-264 O-247
Untitled Abstract: No abstract text available Text: Ω 0.100Ω 600V 54A APT6010B2LL APT6010LLL APT6010B2LL* APT6010LLLG* *G POWER MOS 7 R Denotes RoHS Compliant, Pb Free Terminal Finish. MOSFET B2LL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching	Original	PDF	APT6010B2LL APT6010LLL APT6010B2LL* APT6010LLLG* O-264 O-247
009F Abstract: APT6010B2LL APT6010LLL 6710 mosfet Text: APT6010B2LL APT6010LLL 600V 54A 0.100Ω POWER MOS 7 R MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON	Original	PDF	APT6010B2LL APT6010LLL O-264 O-264 O-247 009F APT6010B2LL APT6010LLL 6710 mosfet
Untitled Abstract: No abstract text available Text: APT6010B2LL APT6010LLL 600V 54A 0.100W B2LL POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON	Original	PDF	APT6010B2LL APT6010LLL O-264 O-264 O-247
Untitled Abstract: No abstract text available Text: APT6010B2LL APT6010LLL 600V 54A 0.100W B2LL POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON	Original	PDF	APT6010B2LL APT6010LLL O-264 O-264 O-247
Untitled Abstract: No abstract text available Text: APT6010B2LL APT6010LLL 600V 54A 0.100Ω R POWER MOS 7 MOSFET B2LL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON	Original	PDF	APT6010B2LL APT6010LLL O-264 O-247
Untitled Abstract: No abstract text available Text: APT6010B2LL APT6010LLL 600V 54A 0.100Ω R POWER MOS 7 MOSFET B2LL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON	Original	PDF	APT6010B2LL APT6010LLL O-264 O-247
APT6010B2LL Abstract: APT6010LLL Text: APT6010B2LL APT6010LLL 600V 54A 0.100W B2LL POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON	Original	PDF	APT6010B2LL APT6010LLL O-264 O-264 O-247 APT6010B2LL APT6010LLL
APT0201 Abstract: APT0202 12 VOLT 10 AMP smps 12 VOLT 2 AMP smps circuit mosfet 300 volt 12 VOLT 100 AMP smps dodge high current IGBT based buck converter IGBT 400 amp IGBT cross Text: Application Note APT0302 Rev. A April 4, 2003 Latest Technology PT IGBTs vs. Power MOSFETs Jonathan Dodge, P.E. Senior Applications Engineer Advanced Power Technology 405 S.W. Columbia Street Bend, OR 97702 USA Based on a paper presented at PCIM China 2003	Original	PDF	APT0302 APT0201 APT0202 12 VOLT 10 AMP smps 12 VOLT 2 AMP smps circuit mosfet 300 volt 12 VOLT 100 AMP smps dodge high current IGBT based buck converter IGBT 400 amp IGBT cross
catalog mosfet Transistor smd Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance	Original	PDF
sot-227 footprint Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G Text: Power Semiconductors Power Modules & RF Power MOSFETs 2006 Power Products Group 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.	Original	PDF
mj 1504 transistor equivalent Abstract: ARF450 FREDFETs transistors mj 1504 APT1201R2BLL APT60GF120JRD APT60M75JVR APT100S20B APT4014BVR APT1208 Text: 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance this position as	Original	PDF
APT100GF60LR Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR Text: Discrete Power Products 2003 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of	Original	PDF