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Abstract: No abstract text available
Text: APT501R1BN Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)30 I(D) Max. (A)9.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)180 Minimum Operating Temp (øC)
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APT501R1BN
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Abstract: No abstract text available
Text: APT501R1BNR Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)30 I(D) Max. (A)9.5 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)180 Minimum Operating Temp (øC)
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APT501R1BNR
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APT5085BN
Abstract: No abstract text available
Text: O D O S A d van ced R o w er Te c h n o l o g y APT5085BN APT4585BN APT501R1BN APT451R1BN POWER MOS IV 500V 450V 500V 450V 9.5A 9.5A 9.0A 9.0A 0.85Q 0.85Q 1.10Q 1.10Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M A X IM U M R A T IN G S All R atin g s : T c = 2 5 ° C u n les s o th e rw is e sp ecified .
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APT5085BN
APT4585BN
APT501R1BN
APT451R1BN
4585B
APT5O05/5O1
O-247AD
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APT5085BN
Abstract: lm 5085b
Text: □ HST'IOT ADVANCFD POWFR TECHNOLOGY ?D 4 M IE » 0Q0Q370 237 «A V P ADVANCED POWER ~\5 Te c h n o l o g y S * APT5085BN APT4585BN APT501R1BN APT451R1BN § Ô S POWER MOS IV 500V 450V 500V 450V 9.5A 9.5A 9.0A 9.0A 0.85 0.85 1.10 1.10 Q £2 Q Q N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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0Q0Q370
APT5085BN
APT4585BN
APT501R1BN
APT451R1BN
4585B
5085B
451R1BN
APT5085/501R1BN
O-247AD
APT5085BN
lm 5085b
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apt4020an
Abstract: No abstract text available
Text: "SW A N CED POÌdEK “Tfl TtCH N O LO G Y DE I o d h v i ü i □u u u u o l . □ T ' M P For Additional information Contact APT Sales Representatives O r The Factory. APT PART# UNITS Vds VOLTS Rds ON OHMS Id cont. AMPS Idm AMPS Pd WATTS APT1001RAN APT1001R2AN
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APT1001RAN
APT1001R2AN
APT9090AN
APT901
APT8075AN
APT8090AN
APT6035AN
APT6040AN
APT5530AN
APT5532AN
apt4020an
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APT*1002R4BN
Abstract: APT5040BNF FREDFET APT802R4BN APT5020BNR APT5085BN APT5020BNF APT5025BN APT6040BNR APT5085BNF
Text: APT TO-247 PACKAGE MOSFET/FREDFET PRODUCTS BV OSS r ds ° n lD(Cont.) PD Ciss(pF) Qg(nC) APT New Product Package Volts Ohms Amps Watts Typ Typ Part No. Comments Style 1.000 1.100 1.000 1.100 1.300 1.600 2.000 2.400 2.000 2.400 4.000 4.200 4.000 4.200 11.0
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O-247
APT1001RBN
APT1001R1BN
APT1001RBNR
APT1001R1BNR
APT1001R3BN
APT1001R6BN
APT1002RBN
APT1002R4BN
APT1002RBNR
APT*1002R4BN
APT5040BNF
FREDFET
APT802R4BN
APT5020BNR
APT5085BN
APT5020BNF
APT5025BN
APT6040BNR
APT5085BNF
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Untitled
Abstract: No abstract text available
Text: A D V AN CF D PÖWFR TECHNOLOGY M'IE T> WÊ 0 2 5 7 ^ 0 ^ A d va n ced P o w er Te c h n o l o g y * OOOOk.32 17b «AVP 'T-'iPK-Ie? 405 S.W. Columbia Street Bend, Oregon 97702-1035, USA PH: 503 382-8028 FAX: (503) 388-0364 = A P T T O -2 4 7 S IN G L E P U L SE U IS R A T E D P O W E R M O SFE T s =
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APT4020BNR
APT4025BNR
APT4030BNR
APT4040BNR
APT4065BNR
APT4080BNR
APT5020BNR
APT5022BNR
APT5025BNR
APT5027BNR
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APT5085BN
Abstract: APT4065BN APT6045BNR APT5027BN APT501R1BN APT4025BNR APT4030BNR APT4065BNR APT4080BNR APT5022BNR
Text: A D VANCFD P OU FR TECHNOLOGY AD VANCED MIE I> 0257^0^ 0000fci3c? 17b 'T -V A -\'y P o w er Te c h n o l o g y IA VP 405 S.W. Columbia Street Bend, Oregon 97702-1035, USA PH: 503 382-8028 FAX: (503) 388-0364 = APT TO-247 SINGLE PULSE UIS RATED POWER MOSFETs =
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0000fci3c?
O-247
APT4020BNR
APT4025BNR
APT4030BNR
APT4040BNR
APT4065BNR
APT4080BNR
APT5020BNR
APT5022BNR
APT5085BN
APT4065BN
APT6045BNR
APT5027BN
APT501R1BN
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APT5085BN
Abstract: APT501R1BN APT801R2BN APT5025BN APT1002R4BN
Text: ADVANCED APT PA R T NUM BER APT1001RBN APT1001R2BN APT1002RBN APT1002R4BN APT1003R5BN APT1004R2BN APT901RBN APT901R2BN APT902RBN APT902R4BN APT903R5BN APT904R2BN APT8075BN APT8090BN APT801R2BN APT801R4BN APT802RBN APT802R4BN APT7575BN APT7S90BN APT751R2BN
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0GDD27b
APT1001RBN
APT1001R2BN
APT1002RBN
APT1002R4BN
O-247
APT5085BN
APT501R1BN
APT801R2BN
APT5025BN
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