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    APT44GA60B Search Results

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    APT44GA60B Price and Stock

    Microchip Technology Inc APT44GA60B

    IGBT PT 600V 78A TO247
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    DigiKey APT44GA60B Tube 70
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    Avnet Americas APT44GA60B Tube 26 Weeks 70
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    Mouser Electronics APT44GA60B
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    Newark APT44GA60B Bulk 70
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    Future Electronics APT44GA60B Tube 26 Weeks 30
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    Microchip Technology Inc APT44GA60B Tube 26 Weeks
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    TME APT44GA60B 1
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    NAC APT44GA60B Tube 50
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    Avnet Silica APT44GA60B 28 Weeks 70
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    Microchip Technology Inc APT44GA60BD30

    IGBT PT 600V 78A TO247
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    DigiKey APT44GA60BD30 Tube 80
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    Avnet Americas APT44GA60BD30 Tube 26 Weeks 80
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    Mouser Electronics APT44GA60BD30
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    Newark APT44GA60BD30 Bulk 80
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    Microchip Technology Inc APT44GA60BD30 Tube 26 Weeks
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    TME APT44GA60BD30 1
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    NAC APT44GA60BD30 Tube 54
    • 1 $6.71
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    Microchip Technology Inc APT44GA60BD30C

    IGBT 600V 78A 337W TO247
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    DigiKey APT44GA60BD30C Tube 30
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    Microsemi Corporation APT44GA60B

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    Bristol Electronics APT44GA60B 93
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    Microsemi Corporation APT44GA60BD30

    Electronic Component
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    ComSIT USA APT44GA60BD30 1,920
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    APT44GA60B Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT44GA60B Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 44; Original PDF
    APT44GA60BD30 Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 44; Original PDF
    APT44GA60BD30C Microsemi IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 78A 337W TO247 Original PDF

    APT44GA60B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    apt44ga60b

    Abstract: No abstract text available
    Text: APT44GA60B 600V High Speed PT IGBT TO -2 47 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT44GA60B apt44ga60b

    APT44GA60B

    Abstract: APT44GA60BD30 APT44GA60SD30 MIC4452 SD30
    Text: APT44GA60BD30 APT44GA60SD30 600V High Speed PT IGBT T APT44GA60SD30 O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT44GA60BD30 APT44GA60SD30 APT44GA60B APT44GA60BD30 APT44GA60SD30 MIC4452 SD30

    Untitled

    Abstract: No abstract text available
    Text: APT44GA60BD30C APT44GA60SD30C 600V High Speed PT IGBT FEATURES APT44GA60SD30C TO -24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise


    Original     		PDF APT44GA60BD30C APT44GA60SD30C

    474J

    Abstract: No abstract text available
    Text: APT44GA60BD30 APT44GA60SD30 600V High Speed PT IGBT T APT44GA60SD30 O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D 3 PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT44GA60BD30 APT44GA60SD30 474J

    Untitled

    Abstract: No abstract text available
    Text: APT44GA60B APT44GA60S 600V High Speed PT IGBT TO APT44GA60S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -24 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D 3 PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT44GA60B APT44GA60S switchin51

    Untitled

    Abstract: No abstract text available
    Text: APT44GA60BD30 APT44GA60SD30 600V High Speed PT IGBT T APT44GA60SD30 O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D 3 PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT44GA60BD30 APT44GA60SD30

    APT44GA60BD30C

    Abstract: Fast Recovery Bridge Rectifier, 60A, 600V APT44GA60SD30C APT44GA60B MIC4452 rectifier bridge 300v 30a
    Text: APT44GA60BD30C APT44GA60SD30C 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is TO APT44GA60SD30C -2 47 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise


    Original     		PDF APT44GA60BD30C APT44GA60SD30C APT44GA60BD30C Fast Recovery Bridge Rectifier, 60A, 600V APT44GA60SD30C APT44GA60B MIC4452 rectifier bridge 300v 30a

    Untitled

    Abstract: No abstract text available
    Text: APT44GA60B APT44GA60S 600V High Speed PT IGBT TO APT44GA60S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -24 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D 3 PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT44GA60B APT44GA60S APT44GA60S

    APT44GA60B

    Abstract: APT44GA60S MIC4452
    Text: APT44GA60B APT44GA60S 600V High Speed PT IGBT TO APT44GA60S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT44GA60B APT44GA60S APT44GA60B APT44GA60S MIC4452

    APT44GA60B

    Abstract: APT44GA60S MIC4452
    Text: APT44GA60B APT44GA60S 600V High Speed PT IGBT TO APT44GA60S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT44GA60B APT44GA60S APT44GA60B APT44GA60S MIC4452

    600v 30a IGBT

    Abstract: Fast Recovery Bridge Rectifier, 60A, 600V apt30gt60 APT30GT60BR APT44GA60BD30 MIC4452 fast recovery diode trr Pt
    Text: APT44GA60BD30 600V High Speed PT IGBT T O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT44GA60BD30 EMI244) 600v 30a IGBT Fast Recovery Bridge Rectifier, 60A, 600V apt30gt60 APT30GT60BR APT44GA60BD30 MIC4452 fast recovery diode trr Pt

    Untitled

    Abstract: No abstract text available
    Text: APT44GA60BD30C APT44GA60SD30C 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise


    Original     		PDF APT44GA60BD30C APT44GA60SD30C

    SP6-P

    Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
    Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		PDF 10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter

    smps 1000W

    Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
    Text: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain


    Original     		PDF des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit

    LE79Q2281

    Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
    Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Solar Solutions Fllex Diodes Dio ode des s Flex Semiconductor Inverter Modules The IDEAL Solar Bypass Solution Discrete Disc Di s re r Components TM LX2400 The IDEAL Solar Bypass Solution TM • Negligible Heat Generation – CoolRUNTM Technology - Less than 10°C rise at 10A


    Original     		PDF LX2400 LX2400â

    VRF2933FL

    Abstract: VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301
    Text: Power Products MICROSEMI POWER PORTFOLIOPortfolio 2014-2015 Power Products New image here TBD Power Semiconductors Power Modules RF Power MOSFETs Power Matters. About Microsemi Microsemi Corporation Nasdaq: MSCC offers a comprehensive portfolio of semiconductor and system


    Original     		PDF MS5-001-14 VRF2933FL VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301