APT34M60S Search Results
APT34M60S Price and Stock
Microchip Technology Inc APT34M60SMOSFET N-CH 600V 36A D3PAK |
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APT34M60S | Tube | 46 | 1 |
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APT34M60S | Tube | 20 Weeks | 40 |
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APT34M60S |
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APT34M60S | Bulk | 40 |
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APT34M60S | Tube | 20 Weeks |
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APT34M60S |
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APT34M60S | 1 |
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APT34M60S | Tube | 28 |
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Microchip Technology Inc APT34M60S-TRMOSFET N-CH 600V 36A D3PAK |
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APT34M60S-TR | Reel | 400 |
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Microchip Technology Inc APT34M60S/TRTrans MOSFET N-CH 600V 36A 3-Pin(2+Tab) D3PAK - Tape and Reel (Alt: APT34M60S/TR) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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APT34M60S/TR | Reel | 26 Weeks | 400 |
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APT34M60S/TR |
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APT34M60S/TR | Reel | 400 |
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APT34M60S/TR | Reel | 26 Weeks |
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APT34M60S/TR |
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APT34M60S/TR | 400 |
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APT34M60S/TR | 1 |
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APT34M60S Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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APT34M60S |
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N-Channel MOSFET | Original | |||
APT34M60S/TR |
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MOSFET N-CH 600V 36A D3PAK | Original |
APT34M60S Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: APT34M60B APT34M60S 600V, 36A, 0.19Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure |
Original |
APT34M60B APT34M60S | |
APT34M60B
Abstract: APT34M60S MIC4452
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Original |
APT34M60B APT34M60S APT34M60B APT34M60S MIC4452 | |
APT34M60B
Abstract: APT34M60S MIC4452
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Original |
APT34M60B APT34M60S APT34M60B APT34M60S MIC4452 | |
APT34M60B
Abstract: APT34M60S MIC4452 AG124
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Original |
APT34M60B APT34M60S APT34M60B APT34M60S MIC4452 AG124 | |
Contextual Info: APT34M60B APT34M60S 600V, 36A, 0.19Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure |
Original |
APT34M60B APT34M60S APT34M60B | |
Contextual Info: AP34M60B AP34M60S 600V, 34A, 0.21Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure |
Original |
AP34M60B AP34M60S APT34M60B APT34M60S |