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APT20M11JLL Price and Stock

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Microchip Technology Inc APT20M11JLL MOSFET N-CH 200V 176A ISOTOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	APT20M11JLL	Tube			10	1 - 10 $70.74 100 $70.74 1000 $70.74 10000 $70.74	Buy Now
Avnet Americas	APT20M11JLL	Tube		20 Weeks	10	1 - 10 $59.2214 100 $53.73815 1000 $53.73815 10000 $53.73815	Buy Now
Mouser Electronics	APT20M11JLL					1 - 10 $70.74 100 $61.1 1000 $61.1 10000 $61.1	Get Quote
Newark	APT20M11JLL	Bulk			10	1 $70.74 10 $70.74 100 $61.1 1000 $57.43 10000 $57.43	Buy Now
Microchip Technology Inc	APT20M11JLL	Tube		20 Weeks		1 $70.74 10 $70.74 100 $61.1 1000 $56.04 10000 $54.2	Buy Now

Onlinecomponents.com	APT20M11JLL					1 $67.54 10 $60.43 100 $55.85 1000 $55.85 10000 $55.85	Buy Now
TME	APT20M11JLL				1	1 $102.25 10 $81.32 100 $81.32 1000 $81.32 10000 $81.32	Get Quote
NAC	APT20M11JLL	Tube			5	1 $65.61 10 $65.61 100 $60.43 1000 $56.01 10000 $56.01	Buy Now
Avnet Silica	APT20M11JLL			22 Weeks	10	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	APT20M11JLL					1 $67.54 10 $60.43 100 $55.85 1000 $55.85 10000 $55.85	Buy Now

APT20M11JLL Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
APT20M11JLL		Advanced Power Technology	POWER MOS 7 R FREDFET		Original	PDF
APT20M11JLL		Microsemi	Power MOS 7 Low Loss MOSFET		Original	PDF

APT20M11JLL Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
APT20M11JLL Contextual Info: APT20M11JLL 200V 176A 0.011Ω R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON	Original	APT20M11JLL OT-227 APT20M11JLL	PDF
Contextual Info: APT20M11JLL 200V 176A 0.011Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON	Original	APT20M11JLL OT-227	PDF
APT20M11JLL Contextual Info: APT20M11JLL 200V 176A 0.011W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses	Original	APT20M11JLL OT-227 APT20M11JLL	PDF
APT20M11JLL Abstract: 2815 rc Contextual Info: APT20M11JLL 200V 176A 0.011Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON	Original	APT20M11JLL OT-227 APT20M11JLL 2815 rc	PDF
catalog mosfet Transistor smd Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt Contextual Info: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance	Original		PDF
sot-227 footprint Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G Contextual Info: Power Semiconductors Power Modules & RF Power MOSFETs 2006 Power Products Group 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.	Original		PDF
APT100GF60LR Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR Contextual Info: Discrete Power Products 2003 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of	Original		PDF