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RF1K49093

Abstract: AN7254 AN9321 AN9322 MS-012AA RF1K4909396
Contextual Info: RF1K49093 S E M I C O N D U C T O R 2.5A, 12V, Avalanche Rated, Logic Level, Dual P-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Features Description • 2.5A, 12V The RF1K49093 Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI

d8p05

Abstract: RFP8P05 RFD8P05 RFD8P05SM RFD8P05SM9A TB334 23842
Contextual Info: RFD8P05, RFD8P05SM, RFP8P05 Data Sheet July 1999 8A, 50V, 0.300 Ohm, P-Channel Power MOSFETs 2384.2 Features • 8A, 50V These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits,

transistor a1442

Abstract: A1442 chip a1442 A1442EEWLT-P2
Contextual Info: A1442 Low Voltage Full Bridge Brushless DC Motor Driver with Hall Commutation and Soft Switching, and Reverse Battery, Short Circuit, and Thermal Shutdown Protection This device is in production, however, it has been deemed Pre-End of Life. The product is approaching end of life. Within a minimum of

satellite decoder circuit diagram

Abstract: analog tuner CXA3038N dvb circuit diagram CXD1930 CXA3108Q CXD1930Q CXD1961AQ CXD1961Q QPSK Demodulator
Contextual Info: CXD1961AQ OVERCOMING FRONT-END DESIGN CHALLENGES IN DVB APPLICATIONS T he era of full-fledged digital satellite broadcasting is fast approaching. North America, Europe and Japan are currently broadcasting programs based on DVB, the European digital video broadcast standard, and soon

AN7254

Abstract: AN7260 AN9321 AN9322 RFF70N06 RFG70N06
Contextual Info: RFF70N06 Data Sheet Title FF7 06 bt A, V, 25 m, Cha el wer OST) utho 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET Features The RFF70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives

AN7254

Abstract: AN9321 AN9322 MS-012AA RF1K49154 RF1K4915496 TB334
Contextual Info: RF1K49154 Data Sheet October 1999 2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET Power MOSFET File Number 4143.3 Features • 2A, 60V This Dual N-Channel power MOSFET is manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI

7n10l

Abstract: RFD7N10LESM 7n10le AN7254 AN7260 RFD7N10LE RFD7N10LESM9A TB334
Contextual Info: RFD7N10LE, RFD7N10LESM Data Sheet 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs These N-Channel power MOSFETs are manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum

AN7254

Abstract: AN7260 AN9321 AN9322 RFF70N06 RFG70N06
Contextual Info: RFF70N06 Data Sheet January 2002 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET Features • 25A†, 60V The RFF70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives

14N05

Abstract: 14n05l 05LSM AN7254 AN9321 AN9322 RFD14N05L RFD14N05LSM RFD14N05LSM9A TB334
Contextual Info: RFD14N05L, RFD14N05LSM Data Sheet 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives

RFP40N10

Contextual Info: RFG40N10, RFP40N10, RF1S40N10SM Data Sheet July 1999 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs Features Title FG4 10, P40 0, 1S4 10S These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives

528E-3

Contextual Info: RF1K49223 Data Sheet August 1999 2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET Power MOSFET 4322.1 Features • 2.5A, 30V Title The RF1K49223 Dual P-Channel power MOSFET is F1K4 manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI

transistor RFP25N05

Abstract: RFP25N05 AN7254 AN7260 AN9321 AN9322 TB334
Contextual Info: RFP25N05 Data Sheet Title FP2 05 bt A, V, 47 m, 25A, 50V, 0.047 Ohm, N-Channel Power MOSFET Features The RFP25N05 N-channel power MOSFET is manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits,

schematic diagram 48V solar charge controller

Abstract: schematic diagram 48V solar controller CP2725 CC109145331 J2007001 CP2000 GR-63-CORE Zone 4 test CC848781534 CP2725AC54TEZ CC109140027
Contextual Info: PRODUCT OVERVIEW Compact Power Line 48V DC Critical Power Solution Benefits Reliability • Compact 48V DC distributed power system • Efficiency approaching 97% • Maximum power in minimal space – Proven field performance – Advanced alarming – N+1 modularity

380LQ123M050A022

Abstract: 380LQ 380LQ123M016H012 380LQ153M016H022 380LQ183M016H032 380LQ183M016J012 380LQ223M016H042 380LQ223M016J022 380LQ273M016H452 380LQ273M016J032
Contextual Info: Type 380LQ 85 °C Compact, High Capacitance, Snap-In Aluminum Higher Capacitance per Case Size Type 380LQ is on average 27% smaller and more than 10 mm shorter than Type 380LX. This is achieved with a new can-closure method that permits installing capacitor elements into smaller cans. Approaching

Contextual Info: RFD16N06LE, RFD16N06LESM Semiconductor April 1999 Data Sheet 16A, 60V, 0.047 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives

Contextual Info: RFF70N06 Semiconductor 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET September 1998 Features Description • 25Af, 60V The RFF70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses fea­ ture sizes approaching those of LSI circuits gives optimum

Contextual Info: P *3 3 S RFD8P06E, RFD8P06ESM, RFP8P06E 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs September 1998 Features Description • 8A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives opti­

FT3055LE

Contextual Info: RFT3055LE Semiconductor 2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET July 1998 Features Description • 2.0A, 60V This product is an N-Channel power MOSFET manufactured using the MegaFET process. This process, which uses fea­ ture sizes approaching those of LSI circuits, gives optimum

AN9321

Abstract: AN9322 RFD15N06LE RFD15N06LESM RFD15N06LESM9A TB334 215e3
Contextual Info: RFD15N06LE, RFD15N06LESM Data Sheet 15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum

RFP50N06

Contextual Info: RFG50N06, RFP50N06, RF1S50N06SM Data Sheet January 2002 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives

a136* allegro

Contextual Info: A1351 High Precision Linear Hall Effect Sensor IC with a Push/Pull, Pulse Width Modulated Output This device is in production, however, it has been deemed Pre-End of Life. The product is approaching end of life. Within a minimum of 6 months, the device will enter its final, Last Time Buy, order phase.

Contextual Info: A1185 and A1186 Ultrasensitive Two-Wire Field-Programmable Chopper-Stabilized Unipolar Hall-Effect Switches These devices are in production, however, they have been deemed Pre-End of Life. These products are approaching end of life. Within a minimum of 6 months, these devices will enter their final, Last Time

Contextual Info: A1354 High Precision 2-Wire Linear Hall Effect Sensor IC With Pulse Width Modulated Output This device is in production, however, it has been deemed Pre-End of Life. The product is approaching end of life. Within a minimum of 6 months, the device will enter its final, Last Time Buy, order phase.

MT5139

Abstract: T5140 MT2060 MT2060A MT2061 MT2061A MT5140 mt marking 2061a
Contextual Info: M T5100-M T5103 M T 5 139, M T 5 140, MT2061A, M T2061, MT2060A, MT2060 Microsemi Corp. FEATURES • Exhibits leakage currents approaching the theoretical bulk characteristics of silicon. • O xide and glass junctions passivated for long-term stable device