APPLICATIONS OF FET Search Results

XC2018

Abstract: 80196 internal architecture diagram 80196 programs IMS2000 XILINX xc2018 XC6200 xilinx 8051 XC2000 memory space of 80196 XC3020
Contextual Info: ISP Applications Applications of In-System Reconfigurable Logic Reconfigurable Logic Applications — 1 Copyright 1995 by Xilinx, Inc. All rights reserved. All trademarks are the property of the respective owners. Agenda Mechanics of reconfigurability Applications of In-System Programmable ISP logic

2SK1961

Contextual Info: Ordering number:ENN4502 N-Channel Junction Silicon FET 2SK1961 High-Frequency Low-Noise Amplifier Applications Applications Package Dimensions • High-frequency low-noise amplifier applications. unit:mm 2019B Features [2SK1961] 5.0 4.0 4.0 5.0 · Adoption of FBET process.

diesel solenoid

Abstract: BUK6211-75C BUK763R6-40C Control of Starter-generator kia278r12 starter/generator BUK762R0-40C BUK6510-75C "high efficiency alternator" BUK761R9-30C
Contextual Info: Leading-edge Automotive Power MOSFETs Next Generation MOSFETs for a wide range of Automotive Applications Low on-resistance MOSFETS for a wide range of automotive applications Intermediate level gate drive N-channel enhancement mode Field-Effect Transistors FETs in industry-standard packages using

05530

Abstract: DM marking code marking code 12A
Contextual Info: PD - 96139A IRFH7923PbF HEXFET Power MOSFET Applications l l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Neworking & Computing Systems Optimized for Control FET Applications VDSS 30V RDS on max Qg 8.7m @VGS = 10V 8.7nC :

Contextual Info: IRFH7921PbF HEXFET Power MOSFET Applications l l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Neworking & Computing Systems Optimized for Control FET Applications VDSS 30V RDS on max Qg 8.5mΩ@VGS = 10V 9.3nC Benefits l l

22B3

Abstract: diode 22b3 Diode Ds 135. 12A
Contextual Info: PD - 96139 IRFH7923PbF HEXFET Power MOSFET Applications l l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Neworking & Computing Systems Optimized for Control FET Applications VDSS 30V RDS on max Qg 8.7m @VGS = 10V 8.7nC : Benefits

EPC8004

Contextual Info: APPLICATION NOTE: AN015 eGaN FETs for Multi-MHz Applications Introducing a Family of eGaN FETs for Multi-Megahertz Hard Switching Applications EFFICIENT POWER CONVERSION Michael de Rooij, PhD, Johan Strydom, PhD The ultra high speed switching capabilities of gallium nitride transistors have now been

IRFH7921PBF

Contextual Info: PD - 97335 IRFH7921PbF HEXFET Power MOSFET Applications l l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Neworking & Computing Systems Optimized for Control FET Applications VDSS 30V RDS on max Qg 8.5mΩ@VGS = 10V 9.3nC Benefits

ADC10

Abstract: Q2D25
Contextual Info: Q2D Series – Quarter-Brick DC/DC Converter 48V Input Dual Output Data Sheet Features Applications Distributed power architectures Telecommunications equipment LAN/WAN applications Data processing applications Independent outputs of any combination of voltages from 1.2V to 5.0V

C1383 NPN transistor collector base and emitter

Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Contextual Info: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,

Contextual Info: PD - 97050 IRF7823PbF HEXFET Power MOSFET Applications l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems l Optimized for Control FET applications VDSS Benefits l Very Low RDS on at 4.5V VGS l Low Gate Charge

W103

Abstract: FW106 P CHANNEL MOSFET
Contextual Info: FW106 P- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • High density mounting is possible because of the complex type which holds two chips of a low on-resistance, Very-high speed switching and 4-volt-drive, P channel MOSFET in one package.

MG100g2ys1

Abstract: mg25q6es1 MG100J2YS1 YTF830 gt25q103 GT15H101 toshiba MG50N2YS9 MG200J2YS1 mg75n2ys1 MG75J2YS1
Contextual Info: SUMMARY OF POWER MOS FET BY APPLICATIONS Applications of the Toshiba power MOS FETs are gouped to their rated voltages and currents as shown below. POWER MOS FET FAMILIES Q tt-MOS Series Standard ^-M OS family gained outstanding polurarity in the market Q tt-MOS II Series

RF POWER amplifier 10 watt

Abstract: 8587 sm33 WiMax Configurations 6 pin DC power connector
Contextual Info: Model SM3338-43 3300-3800 MHz 20 Watt Linear Power Amplifier FOR WiMAX APPLICATIONS The SM3338-43 is a 3.3 to 3.8 GHz solid state GaAs FET amplifier designed for WiMAX applications. The amplifier provides 50 dB of linear gain with a P1dB of +43 dBm. The unit is designed for

laser diode spice modeling

Abstract: laser diode spice model simulation spice ATF 10136 atf-10136 spice MSA-09 ATF13136 mmic a20 MSA-0311 AT-41500 S parameters for ATF 10136
Contextual Info: Application Design Tools Services and Applications Literature Hewlett-Packard customers are supported by an Applications Engineering Department. The applications engineering staff investigates circuit applications, design techniques, and device performance. The results of these

500 watt RF amplifier GHz

Abstract: SM4450-43L
Contextual Info: Model SM4450-43L 4400-5000 MHz 20 Watt Ultra-Linear Power Amplifier FOR BROADCAST APPLICATIONS The SM4450-43L is a 4.4 to 5.0 GHz solid state GaAs FET amplifier designed for various commercial and military applications. The amplifier provides 55 dB of linear gain with a P1dB of +43 dBm. Our

w201 mosfet

Abstract: FW201
Contextual Info: FW 201 N- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • High density mounting is possible because of the complex type which holds two chips of a low on-resistance, Very-high speed switching and 2.5-volt-drive, N channel MOSFET in one package.

FW101

Abstract: W101
Contextual Info: FW 101 P- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • High density mounting is possible because of the complex type which holds two chips of a low on-resistance, Very-high speed switching and 2.5-volt-drive, P channel MOSFET in one package.

Ruscak

Abstract: undersampling 1992 quadrature bandpass sigma-delta ADC AD9042 ad9101 walt Kester trends Lyons AD9100 AM receiver
Contextual Info: SECTION 5 UNDERSAMPLING APPLICATIONS Fundamentals of Undersampling Increasing ADC SFDR and ENOB using External SHAs Use of Dither Signals to Increase ADC Dynamic Range Effect of ADC Linearity and Resolution on SFDR and Noise in Digital Spectral Analysis Applications

AN885 - "Brushless DC Motor Fundamentals"

Abstract: S 170 MOSFET TRANSISTOR AN898 600v 20a IGBT PIC stepper motor interfacing HEXFET Power MOSFET designer manual static characteristics of mosfet and igbt 2A mosfet igbt driver stage fuji igbt IGBT Modules Explanation of Technical Information DC MOTOR SPEED CONTROL USING IGBT
Contextual Info: M AN898 Determining MOSFET Driver Needs for Motor Drive Applications Author: Jamie Dunn Microchip Technology Inc. INTRODUCTION Electronic motor control for various types of motors represents one of the main applications for MOSFET drivers today. This application note discusses some of

2SK772

Abstract: EN239-2 EN-239-2
Contextual Info: Ordering number:EN2392A N-Channel Junction Silicon FET 2SK772 AF Amplifier Applications Applications Package Dimensions • Variable resistors, analog switches, AF amplifier, constant-current circuit. unit:mm 2034A [2SK772] 4.0 Features 3.0 · Adoption of FBET process.

TTL 7100

Abstract: SM7175-43
Contextual Info: Model SM7175-43 7100-7500 MHz 20 Watt Ultra-Linear Power Amplifier FOR COFDM APPLICATIONS The SM7175-43 is a 7.1 to 7.5 GHz solid state GaAs FET amplifier designed for European digital video broadcast applications. The amplifier provides 58 dB of linear gain with a P1dB of +43 dBm. It is

TTL 7100

Abstract: SM6471-43 linear power amplifier
Contextual Info: Model SM6471-43 6400-7100 MHz 20 Watt Ultra-Linear Power Amplifier FOR COFDM APPLICATIONS The SM6471-43 is a 6.4 to 7.1 GHz solid state GaAs FET amplifier designed for various commercial and military applications. The amplifier provides 55 dB of linear gain with a P1dB of +43 dBm. It is

C9052-02

Abstract: C9052-01 A9053-01 C9052 C9052-03 C9052-04 S2386 S5821 photodiodes frequency counter Circuit
Contextual Info: MODULE Si photodiode evaluation circuit C9052 series Easy-to-use circuit for Si photodiode operation Features Applications l Allows easy evaluation of standard Si photodiodes l On-board circuit examples for typical applications of l Testing and evaluation of standard Si photodiodes