application notes irfp150
Abstract: IRFP150P
Text: IRFP150, SiHFP150 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.055 Qg (Max.) (nC) 140 Qgs (nC) 29 Qgd (nC) 68 Configuration Single D TO-247AC Dynamic dV/dt Rating Repetitive Avalanche Rated
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IRFP150,
SiHFP150
2002/95/EC
O-247AC
O-247AC
11-Mar-11
application notes irfp150
IRFP150P
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Untitled
Abstract: No abstract text available
Text: IRFP150, SiHFP150 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.055 Qg (Max.) (nC) 140 Qgs (nC) 29 Qgd (nC) 68 Configuration Single D TO-247AC Dynamic dV/dt Rating Repetitive Avalanche Rated
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IRFP150,
SiHFP150
2002/95/EC
O-247AC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: IRFP150, SiHFP150 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.055 Qg (Max.) (nC) 140 Qgs (nC) 29 Qgd (nC) 68 Configuration Single D TO-247AC Dynamic dV/dt Rating Repetitive Avalanche Rated
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IRFP150,
SiHFP150
O-247AC
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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irfp150
Abstract: No abstract text available
Text: IRFP150, SiHFP150 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.055 Qg (Max.) (nC) 140 Qgs (nC) 29 Qgd (nC) 68 Configuration Single D TO-247AC Dynamic dV/dt Rating Repetitive Avalanche Rated
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IRFP150,
SiHFP150
2002/95/EC
O-247AC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
irfp150
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFP150, SiHFP150 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.055 Qg (Max.) (nC) 140 Qgs (nC) 29 Qgd (nC) 68 Configuration Single D TO-247AC Dynamic dV/dt Rating Repetitive Avalanche Rated
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IRFP150,
SiHFP150
O-247AC
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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IRFP150N
Abstract: No abstract text available
Text: IRFP150N Data Sheet March 2000 File Number 4844 44A, 100V, 0.030 Ohm, N-Channel Power MOSFET [ /Title IRFP1 50N /Subject (44A, 100V, 0.030 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil, semiconductor, 44A, 100V, 0.030 Ohm, NChannel Power MOSFET,
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IRFP150N
O-247
IRFP150N
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IRFP150
Abstract: application notes irfp150
Text: IRFP150, SiHFP150 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.055 Qg (Max.) (nC) 140 Qgs (nC) 29 Qgd (nC) 68 Configuration Single D TO-247AC Dynamic dV/dt Rating Repetitive Avalanche Rated
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IRFP150,
SiHFP150
O-247AC
2002/95/EC
11-Mar-11
IRFP150
application notes irfp150
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IRFP150A
Abstract: No abstract text available
Text: IRFP150A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS on = 0.04 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 43 A Improved Gate Charge Extended Safe Operating Area TO-3P Ο 175 C Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 100V
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IRFP150A
IRFP150A
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Untitled
Abstract: No abstract text available
Text: IRFP150A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS on = 0.04 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 43 A Improved Gate Charge Extended Safe Operating Area TO-3P Ο 175 C Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 100V
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IRFP150A
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65e9
Abstract: irfp150n IRFP150N equivalent AN7254 AN7260 AN9321 AN9322 TB334
Text: IRFP150N TM Data Sheet March 2000 File Number 4844 44A, 100V, 0.030 Ohm, N-Channel Power MOSFET Packaging Features JEDEC TO-247 SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.030Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER
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IRFP150N
O-247
65e9
irfp150n
IRFP150N equivalent
AN7254
AN7260
AN9321
AN9322
TB334
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IRFP150N
Abstract: 65e9 65E8 AN7254 AN7260 AN9321 AN9322 TB334
Text: IRFP150N Data Sheet January 2002 44A, 100V, 0.030 Ohm, N-Channel Power MOSFET Packaging Features JEDEC TO-247 SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.030Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER
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IRFP150N
O-247
IRFP150N
65e9
65E8
AN7254
AN7260
AN9321
AN9322
TB334
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IRFP150V
Abstract: No abstract text available
Text: PD - 94459A IRFP150V HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 24mΩ G ID = 47A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize
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4459A
IRFP150V
O-247
applic559)
IRFP150V
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Untitled
Abstract: No abstract text available
Text: PD - 94459A IRFP150V HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 24mΩ G ID = 47A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize
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4459A
IRFP150V
O-247
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IRFP150V
Abstract: No abstract text available
Text: PD - 94459A IRFP150V HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 24mΩ G ID = 47A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize
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4459A
IRFP150V
O-247
IRFP150V
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IRFP150
Abstract: application notes irfp150 IRFP150P
Text: IRFP150, SiHFP150 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.055 Qg (Max.) (nC) 140 Qgs (nC) 29 Qgd (nC) 68 Configuration Single D TO-247 Dynamic dV/dt Rating Repetitive Avalanche Rated
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IRFP150,
SiHFP150
O-247
O-247
18-Jul-08
IRFP150
application notes irfp150
IRFP150P
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035H
Abstract: IRFPE30 50V 10A ultra fast diode
Text: PD - 95515 IRFP150VPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 24mΩ G ID = 47A S Description
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IRFP150VPbF
O-247
IRFPE30
035H
IRFPE30
50V 10A ultra fast diode
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Untitled
Abstract: No abstract text available
Text: PD - 95515 IRFP150VPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 24mΩ G ID = 47A S Description
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IRFP150VPbF
O-247
IRFPE30
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035H
Abstract: IRFPE30
Text: PD - 95515 IRFP150VPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 24mΩ G ID = 47A S Description
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IRFP150VPbF
O-247
IRFPE30
035H
IRFPE30
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sil 5102
Abstract: IRFP150 TB334
Text: IRFP150 Data Sheet May 2000 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET [ /Title IRFP1 50 /Subject (40A, 100V, 0.055 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (40A, 100V, 0.055 Ohm, NChannel Power MOSFET, Intersil Corporation, TO247) /Creator ()
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IRFP150
sil 5102
IRFP150
TB334
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IRFZ44G
Abstract: IRF840G IRFZ34G IRFBC30G IRF9540G IRF640G IRFBC40G IRFP140 equivalent transistor 9721 transistor IRFP140N
Text: Quarterly Reliability Report for HEXFET Assembly IRGB Number 8 January 1999 Prepared by QA Services Page 1 of 60 Contents Prepared by QA Services 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions/Schematics
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IRFIZ34N
IRFIZ44N
IRFIZ48N
IRFI1010N
IRFI520N
IRFI530N
IRFI1310N
IRLI3705N
IRLIZ24N
IRLIZ44N
IRFZ44G
IRF840G
IRFZ34G
IRFBC30G
IRF9540G
IRF640G
IRFBC40G
IRFP140 equivalent
transistor 9721
transistor IRFP140N
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IRF540 n-channel MOSFET
Abstract: GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 AN964 IRFC9140R
Text: I R , „-riJ- L . ,», IGBT, HEXFET, HEXSense and Logic Level Die in t e r n a t io n a l - INTERNATIONAL R E C T I F I E R StE D • QD102tib ? ■ IGBTs, HEXFET, HEXSENSE and LOGIC LEVEL HEXFET DIE ^ - q/-OS~ International Rectifier now support Die and Wafer sales from their European Headquarters at Oxted, England.
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OCR Scan
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QD102t
IRF540 n-channel MOSFET
GES 9515
irf740,irf840
IRC540 equivalent
RTV3140
IRF540 mosfet with maximum VDS 30 V
IRF540 p-channel MOSFET
IRLC120
AN964
IRFC9140R
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
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sumida 94V-0
Abstract: inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET
Text: International Rectifier The IGBT SIP & HEXPak Navigator Effective 8 September, EXISTING Products NEW Products UPCOMING Products POTENTIAL Products released to production in last 6-9 months to be released within next 3-4 months no current plans. see bus.mgmt.
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IRFK2D054
IRFK2F054
CPV362M4U
CPV363M4U
CPV364M4U
CPV362M4F
CPV363M4F
CPV364M4F
CPV362M4K
CPV363M4K
sumida 94V-0
inverter using irfz44n
MOSFET IRF9430
IRF7414
irfp460 dc welding circuit diagram
IRFP264 inverter circuits
IRFP450 inverter
Three phase inverter using irfp450 mosfet Diagram
Sumida ul94v-0 inverter
IRF 544 N MOSFET
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IRFIBC44LC
Abstract: MOSFET IRF 3710 transistor IRFZ46N irf2807 equivalent IRFIBC44 TO-220 IRF 3615 irfz46n irf 3215 mosfet irf 9740 transistor equivalent irf510
Text: SWITCH RELIABILITY REPORT QUARTERLY REPORT NUMBER 57 OCTOBER 15, 1999 International Rectifier WORLD HEADQUARTERS: 233 KANSAS ST., EL SEGUNDO, CA 90245 USA • Tel: 310 322-3332 • TELEX 66-4464 EUROPEAN HEADQUARTERS: HURST GREEN, OXTED, SURREY RH8 9BB, UK • Tel: (44) 0883 714234 • TELEX 95219
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