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    APM2556N MOSFET Search Results

    APM2556N MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    APM2556N MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    APM2556N

    Abstract: apm*2556n apm2556n mosfet apm2556 APM2556NU STD-020C apm255 CJ330 apm25 NA 061
    Text: APM2556NU N-Channel Enhancement Mode MOSFET Features • Pin Description 25V/60A, RDS ON =4.5mΩ (typ.) @ VGS=10V G RDS(ON)=7.5mΩ (typ.) @ VGS=4.5V • • • D Super High Dense Cell Design S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)


    Original     		APM2556NU 5V/60A, O-252 APM2556N APM2556N MIL-STD-883D-2003 MIL-STD-883D-1005 JESD-22-B apm*2556n apm2556n mosfet apm2556 APM2556NU STD-020C apm255 CJ330 apm25 NA 061 PDF

    APM2556N

    Abstract: apm2556n mosfet apm*2556n apm2556
    Text: APM2556NU N-Channel Enhancement Mode MOSFET Features • Pin Description 25V/60A, RDS ON =4.5mΩ (typ.) @ VGS=10V G RDS(ON)=7.5mΩ (typ.) @ VGS=4.5V • • • D Super High Dense Cell Design S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)


    Original     		APM2556NU 5V/60A, O-252 APM2556N APM2556N MIL-STD-883D-2003 MIL-STD-883D-1005 JESD-22-B apm2556n mosfet apm*2556n apm2556 PDF

    apm2556n

    Abstract: APM2556NU apm2556 apm*2556n apm2556n mosfet apm255 ap*2556 ANPEC A102 diode A102
    Text: APM2556NU N-Channel Enhancement Mode MOSFET Features • Pin Description 25V/60A, RDS ON =4.5mΩ (typ.) @ VGS=10V RDS(ON)=7.5mΩ (typ.) @ VGS=4.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free and Green Devices Available


    Original     		APM2556NU 5V/60A, O-252 APM2556N APM2556N APM2556NU apm2556 apm*2556n apm2556n mosfet apm255 ap*2556 ANPEC A102 diode A102 PDF