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    APD 2 GHZ 150 NA Search Results

    APD 2 GHZ 150 NA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NR8360JP-BC-AZ Renesas Electronics Corporation φ 30 μm InGaAs Avalanche Photo Diode 14-PIN DIP Module With TEC Visit Renesas Electronics Corporation
    NR8800FS-CB-AZ Renesas Electronics Corporation φ 80 μm InGaAs Avalanche Photo Diode Module for OTDR Applications Visit Renesas Electronics Corporation
    NR8300FP-CC-AZ Renesas Electronics Corporation 1000 to 1600 nm Optical Fiber Communications φ 30 µm InGaAs Avalanche Photo Diode Module Visit Renesas Electronics Corporation
    NR8800FS-CB-AZ/SH Renesas Electronics Corporation φ 80 μm InGaAs Avalanche Photo Diode Module for OTDR Applications Visit Renesas Electronics Corporation
    NR4211TH-AZ Renesas Electronics Corporation Receiver Limiting Tia, With Dca Function) Inalas Apd Receiver With Internal Pre-Amplifier For 10 Gb/S Applications Visit Renesas Electronics Corporation

    APD 2 GHZ 150 NA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    JDSU ERM

    Abstract: jdsu apd avalanche photodiode jdsu ingaas apd photodetector photodetector apd dwdm APD 1550 nm photodetector
    Text: Product Bulletin 10 Gb/s Avalanche Photodiode APD High Dynamic Range (HDR) Receiver ERM 528 HDR The JDS Uniphase 10 Gb/s Avalanche Photodiode (APD) High Dynamic Range (HDR) Receiver is a 10 Gb/s APD optical receiver consisting of an APD photodiode, a GaAsHBT TIA, and a


    Original     		PDF

    avalanche photodiode receiver

    Abstract: JDSU ERM InGaAs apd photodiode ingaas apd photodetector avalanche photodiode ghz InGaAs APD, 10 Gb/s, -30 dBm 877-550-JDSU transimpedance amplifier 7.5 GHz 10 gb APD receiver APD 1550 nm photodetector
    Text: Product Bulletin ERM 598 10 Gb/s Automatic Gain Control AGC APD Receiver Module The ERM 598 is a 10 Gb/s avalanche photodiode receiver with automatic gain control (AGC) for long-haul SONET/SDH OC-192/STM-64 DWDM applications. The receiver module integrates a low capacitance, low dark current


    Original     		PDF OC-192/STM-64 avalanche photodiode receiver JDSU ERM InGaAs apd photodiode ingaas apd photodetector avalanche photodiode ghz InGaAs APD, 10 Gb/s, -30 dBm 877-550-JDSU transimpedance amplifier 7.5 GHz 10 gb APD receiver APD 1550 nm photodetector

    APD 1300 2,5 GHz

    Abstract: JDSU avalanche photodiode ingaas ghz JDSU ERM ingaas apd photodetector apd gain control InGaAs 1550 photodiode transimpedance amplifier jdsu avalanche photodiode avalanche photodiode jdsu photodetector apd dwdm
    Text: Product Bulletin 10 Gb/s Automatic Gain Control AGC APD Receiver Module ERM 598 The ERM 598 is a 10 Gb/s avalanche photodiode receiver with automatic gain control (AGC) for long-haul SONET/SDH OC-192/STM-64 DWDM applications. The receiver module integrates a low capacitance, low dark current


    Original     		PDF OC-192/STM-64 APD 1300 2,5 GHz JDSU avalanche photodiode ingaas ghz JDSU ERM ingaas apd photodetector apd gain control InGaAs 1550 photodiode transimpedance amplifier jdsu avalanche photodiode avalanche photodiode jdsu photodetector apd dwdm

    superlattice avalanche

    Abstract: NR3470MU-CC NR4270MU-CC NR4500BP-CC NR4500CP-CC NR7500 STM-16 STM-64 10 gb PIN receiver 10 gb APD receiver
    Text: DATA SHEET RECEIVER NR4270MU-CC SUPERLATTICE APD RECEIVER WITH SINGLE MODE FIBER INTERNAL PREAMPLIFIER FOR 10 Gb/s APPLICATIONS DESCRIPTION The NR4270MU-CC is a 10 Gb/s superlattice avalanche photo diode APD receiver in a 17-pin mini-butterfly package with an internal preamplifier.


    Original     		PDF NR4270MU-CC NR4270MU-CC 17-pin OC-192 STM-64, OC-192) superlattice avalanche NR3470MU-CC NR4500BP-CC NR4500CP-CC NR7500 STM-16 STM-64 10 gb PIN receiver 10 gb APD receiver

    Lucent apd

    Abstract: APD power supply LG1628AXA LG1600 OP11 OP21 STM-16 transimpedance amplifier 7.5 GHz lucent technologies W series op2a
    Text: Preliminary Data Sheet January 1998 LG1628AXA SONET/SDH 2.488 Gbits/s Transimpedance Amplifier Features • High data rate: 2.5 Gbits/s ■ High gain: 5.8 kΩ transimpedance ■ Complementary 50 Ω outputs ■ Low noise ■ Ultrawide dynamic range ■ Single –5.2 V ECL power supply


    Original     		PDF LG1628AXA LG1605 LG1600 LG1628AXA DS97-156FCE Lucent apd APD power supply OP11 OP21 STM-16 transimpedance amplifier 7.5 GHz lucent technologies W series op2a

    InGaAs apd photodiode

    Abstract: MAR 609 InGaas PIN photodiode, 1550 NEP InGaAs APD photodiode 1550 Tomography VBD1 photodiode 1550 NEP photodiode InGaAs NEP backside illuminated ingaas photodiode LIDAR
    Text: SU200-01A-TO SU200-01A-SM Large Area InGaAs APDs The largest commercially available InGaAs APD, the SU200-01A is ideal for 1.25 Gbps free space optical communications laser range-finding applications, OTDR and high resolution Optical Coherence Tomography.


    Original     		PDF SU200-01A-TO SU200-01A-SM SU200-01A 03-Mar-05 InGaAs apd photodiode MAR 609 InGaas PIN photodiode, 1550 NEP InGaAs APD photodiode 1550 Tomography VBD1 photodiode 1550 NEP photodiode InGaAs NEP backside illuminated ingaas photodiode LIDAR

    10G APD chip

    Abstract: Photodiode apd amplifier 500 watts amplifier schematic diagram PSS-AD500-1 10G APD photodiode Avalanche photodiode APD photodiode Avalanche photodiode APD FOR POWER avalanche photodiode receiver AD500 PSS-AD500
    Text: Pacific Silicon Sensor Inc. Data Sheet PSS-AD500-1.3G-TO5 OPTICAL DATA RECEIVER USING AN AVALANCHE PHOTODIODE AND A 1.3 GHz AMPLIFIER PSS-AD500-1.3G-TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a


    Original     		PDF PSS-AD500-1 10G APD chip Photodiode apd amplifier 500 watts amplifier schematic diagram 10G APD photodiode Avalanche photodiode APD photodiode Avalanche photodiode APD FOR POWER avalanche photodiode receiver AD500 PSS-AD500

    10G APD chip

    Abstract: PSS-AD230 Photodiode apd amplifier apd model 10G APD photodiode Avalanche photodiode avalanche photodiode receiver AD230-2.3G-TO5 apd 850 nm 130 ps PSS-AD230-2
    Text: Pacific Silicon Sensor Inc. Data Sheet PSS-AD230-2.3G-TO5 OPTICAL DATA RECEIVER USING AN AVALANCHE PHOTODIODE AND A 2.3 GHz AMPLIFIER PSS-AD230-2.3G-TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a


    Original     		PDF PSS-AD230-2 10G APD chip PSS-AD230 Photodiode apd amplifier apd model 10G APD photodiode Avalanche photodiode avalanche photodiode receiver AD230-2.3G-TO5 apd 850 nm 130 ps

    G8931-20

    Abstract: low dark current APD SE-171 G893 hamamatsu low dark current APD KAPDB0120EA hamamatsu ingaas APD
    Text: PHOTODIODE InGaAs APD G8931-20 Large active area: φ0.2 mm, high-speed response: 0.9 GHz G8931-20 is a large area InGaAs APD designed for distance measurement, spatial light transmission and low-light-level detection, etc. Despite its large active area of φ0.2 mm, G8931-20 provides high-speed response typical cut-off frequency 0.9 GHz at M=10 .


    Original     		PDF G8931-20 G8931-20 SE-171 KAPD1019E03 low dark current APD G893 hamamatsu low dark current APD KAPDB0120EA hamamatsu ingaas APD

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE InGaAs APD G8931-20 Large active area: φ0.2 mm, high-speed response: 0.9 GHz G8931-20 is a large area InGaAs APD designed for distance measurement, spatial light transmission and low-light-level detection, etc. Despite its large active area of φ0.2 mm, G8931-20 provides high-speed response typical cut-off frequency 0.9 GHz at M=10 .


    Original     		PDF G8931-20 G8931-20 125hone: SE-171 KAPD1019E01

    10G APD chip

    Abstract: westlake capacitors 10G APD photodiode Avalanche photodiode Photodiode apd amplifier avalanche photodiode bias rise time avalanche photodiode avalanche photodiode photodiode Avalanche photodiode APD 500 watts amplifier schematic diagram
    Text: DATA SHEET PSS-AD500-2.3G-TO5 OPTICAL DATA RECEIVER USING AN AVALANCHE PHOTODIODE AND A 2.3 GHz AMPLIFIER PSS-AD-500-2.3G-TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a hermetically sealed TO5


    Original     		PDF PSS-AD500-2 PSS-AD-500-2 10G APD chip westlake capacitors 10G APD photodiode Avalanche photodiode Photodiode apd amplifier avalanche photodiode bias rise time avalanche photodiode avalanche photodiode photodiode Avalanche photodiode APD 500 watts amplifier schematic diagram

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE InGaAs APD G8931-20 Large active area: φ0.2 mm, high-speed response: 0.9 GHz G8931-20 is a large area InGaAs APD designed for distance measurement, spatial light transmission and low-light-level detection, etc. Despite its large active area of φ0.2 mm, G8931-20 provides high-speed response typical cut-off frequency 0.9 GHz at M=10 .


    Original     		PDF G8931-20 G8931-20 125hone: SE-171 KAPD1019E01

    G8931-20

    Abstract: LH0032 SE-171 low dark current APD APD OTDR
    Text: PHOTODIODE InGaAs APD G8931-20 Large active area: φ0.2 mm, high-speed response: 0.9 GHz G8931-20 is a large area InGaAs APD designed for distance measurement, spatial light transmission and low-light-level detection, etc. Despite its large active area of φ0.2 mm, G8931-20 provides high-speed response typical cut-off frequency 0.9 GHz at M=10 .


    Original     		PDF G8931-20 G8931-20 SE-171 KAPD1019E02 LH0032 low dark current APD APD OTDR

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET APD Series: Hermetic Ceramic Packaged Silicon PIN Diode Devices Applications • Switches  Attenuators Features  Established PIN diode process  Low capacitance designs  Voltage ratings to 200 V  Tight control of I layer base width


    Original     		PDF APD0505 APD1520 203250B

    Ge APD

    Abstract: LUCENT InGaAs Lucent receiver APD reverse bias LUCENT APD Reliability Factor 127B 127C TR-NWT-000468 APD reverse bias stability Lucent apd
    Text: Data Sheet September 1998 127A/B/C InGaAs Avalanche Photodetectors Features • High performance at both 1.3 µm and 1.5 µm. ■ Suitable for use in harsh environments. ■ Higher sensitivity and longer wavelength response than germanium APDs. ■ Permanently locked fiber alignment and high coupling stability.


    Original     		PDF 27A/B/C 127B/C) DS98-426LWP DS95-103LWP) Ge APD LUCENT InGaAs Lucent receiver APD reverse bias LUCENT APD Reliability Factor 127B 127C TR-NWT-000468 APD reverse bias stability Lucent apd

    GR-468-CORE

    Abstract: 1550 nm APD optical receivers Photodiode apd high sensitivity EIA-625 P172 STM-16 10 gb laser diode 10 gb APD receiver
    Text: Advance Data Sheet July 2003 P173A OC-48/STM-16 MiniDIL APD Receiver with Improved Sensitivity –34 dBm Features • Low-profile, 8-lead mini-DIL or gull-wing style package: — Suitable for SONET/SDH applications ■ Metal package: — Offers superior shielding for high noise


    Original     		PDF P173A OC-48/STM-16 GR-468-CORE DS01-331-1 GR-468-CORE 1550 nm APD optical receivers Photodiode apd high sensitivity EIA-625 P172 STM-16 10 gb laser diode 10 gb APD receiver

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET APD Series: Silicon PIN Diodes, Packaged and Bondable Chips Applications • Switches  Attenuators Features  Established Skyworks PIN diode process  Low capacitance designs to 0.05 pF  Voltage ratings to 200 V  Chip size < 15 mils square


    Original     		PDF SQ04-0074. 200075Q

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET APD Series: Silicon PIN Diodes, Packaged and Bondable Chips Applications • Switches  Attenuators Features  Established Skyworks PIN diode process  Low capacitance designs to 0.05 pF  Voltage ratings to 200 V  Chip size < 15 mils square


    Original     		PDF SQ04-0074. 200075P

    InGaAs APD Pre-Amplifier

    Abstract: InGaAs APD Pre-Amplifier 14 pin 1922 DMO Module Photodiode alcatel apd InGaAs apd photodiode of g.653 avalanche photodiode oc48 1550 fiber 2.5 apd photodetector alcatel APD, applications, bias supply thermistor supply 9V
    Text: Alcatel 1922 DM0 2.5 Gbit/s Receiver Module InGaAs APD Pre-Amplifier Description Designed to provide high optical performance for ITU-T G.652 standard optical fiber and ITU-T G.653 shifted dispersion fiber. The Alcatel 1922 DMO consists of a gold-plated, 14-pin, hermetic package,


    Original     		PDF 14-pin, VMON/11KW F-91625 InGaAs APD Pre-Amplifier InGaAs APD Pre-Amplifier 14 pin 1922 DMO Module Photodiode alcatel apd InGaAs apd photodiode of g.653 avalanche photodiode oc48 1550 fiber 2.5 apd photodetector alcatel APD, applications, bias supply thermistor supply 9V

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET APD Series: Silicon PIN Diodes, Packaged and Bondable Chips Applications • Switches  Attenuators Features  Established Skyworks PIN diode process  Low capacitance designs to 0.05 pF  Voltage ratings to 200 V  Chip size < 15 mils square


    Original     		PDF SQ04-0074. 200075O

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET APD Series: Silicon PIN Diodes, Packaged and Bondable Chips Applications • Switches  Attenuators Features  Established Skyworks PIN diode process  Low capacitance designs to 0.05 pF  Voltage ratings to 200 V  Chip size < 15 mils square


    Original     		PDF SQ04-0074. 200075N

    2SC869

    Abstract: No abstract text available
    Text: MITSUBISHI SILICON AVALANCHE PHOTODIODES blE D • lflITS PD1XX5 SERIES ^ 4 ^ 0 2 ^ DDIMTGT 535 MITSUBISHI DISCRETE SC FOR OPTICAL COMMUNICATION AND RADAR SYSTEMS TYPE NAME FEATURES DESCRIPTION • High speed response (pulse rise tim e 750ps) PD1XX5 is a silicon avalanche photodiode (Si-APD)


    OCR Scan     		PDF 750ps) 400MHz) 2SC869 2SC869

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SILICON AVALANCHE PHOTODIODES blE ]> • PD1XX2 SERIES bSHRflST 0014705 TiT » M I T S MITSUBISHI DISCRETE SC FOR OPTICAL COMMUNICATION AND RADAR SYSTEMS TYPE NAME DESCRIPTION FEATURES PD1XX2 is a silicon avalanche photodiode (Si-APD) • High speed response (pulse rise tim e 150ps)


    OCR Scan     		PDF 150ps) 800GHz) AD1000)