AP28G45GEM
Abstract: No abstract text available
Text: AP28G45GEM Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ High Input Impedance ▼ High Pick Current Capability C ▼ 3.3V Gate Drive ▼ Strobe Flash Applications VCE 450V ICP 130A C C C C G G E SO-8
|
Original
|
AP28G45GEM
AP28G45GEM
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP28G45GEM-HF-3 Insulated Gate Bipolar Power Transistor High Input Impedance High Peak Current Capability 450V VCE C C I CP 130A C C Low 3.3V Gate Drive Strobe Flash Applications E SO-8 RoHS-compliant, halogen-free package
|
Original
|
AP28G45GEM-HF-3
AP28G45
28G45GEM
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AP28G45EM Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR High Input Impedance High Pick Current Capability C 3.3V Gate Drive Strobe Flash Applications VCE 450V ICP 130A C C C C G G E SO-8 E E E Absolute Maximum Ratings
|
Original
|
AP28G45EM
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AP28G45GEO-HF RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR High Input Impedance High Peak Current Capability E Low Gate Drive Strobe Flash Applications G E E VCE 400V ICP 150A C C TSSOP-8 C C C G E Absolute Maximum Ratings
|
Original
|
AP28G45GEO-HF
00V/us,
0V-30V)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AP28G45GEM Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR High Input Impedance High Pick Current Capability C 3.3V Gate Drive Strobe Flash Applications VCE 450V ICP 130A C C C C G G E SO-8 E E E
|
Original
|
AP28G45GEM
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AP28G45GEO-HF RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ High Input Impedance ▼ High Peak Current Capability E ▼ Low Gate Drive ▼ Strobe Flash Applications G E E VCE 400V ICP 150A C C TSSOP-8
|
Original
|
AP28G45GEO-HF
00V/us,
0V-30V)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP28G45GEO-HF-3 Insulated Gate Bipolar Power Transistor High Peak Current Capability G E E 400V VCE High Input Impedance E I CP 150A Low Gate Drive Strobe Flash Applications TSSOP-8 RoHS-compliant, halogen-free package C C
|
Original
|
AP28G45GEO-HF-3
AP28G45
28G45GEO
|
PDF
|
AP28G45EM
Abstract: No abstract text available
Text: AP28G45EM Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ High Input Impedance ▼ High Pick Current Capability C ▼ 3.3V Gate Drive ▼ Strobe Flash Applications VCE 450V ICP 130A C C C C G G E SO-8 E E E Absolute Maximum Ratings
|
Original
|
AP28G45EM
AP28G45EM
|
PDF
|