AP201 Search Results

AP2012SF4C

Contextual Info: 2.0x1.25mm INFRA-RED EMITTING DIODE AP2012SF4C Features Description 2.0mmx1.25mm SMT LED,1.1mm THICKNESS. MECHANICALLY AND SPECTRALLY MATCHED TO THE SF4 Made with Gallium Aluminum Arsenide Infrared Emitting diodes. PHOTOTRANSISTOR. WATER CLEAR LENS. PACKAGE: 2000PCS / REEL.

AP2012CGCK

Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: AP2012CGCK Features Description z2.0mmx1.25mm zLOW SMT LED,1.1mm THICKNESS. POWER CONSUMPTION. zWIDE zIDEAL The Green source color devices are made with InGaAlP on GaAs substrate Light Emitting Diode. VIEWING ANGLE.

AP2012SYCK

Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP AP2012SYCK Features SUPER BRIGHT YELLOW Description 2.0mmx1.25mm SMT LED,1.1mm THICKNESS. The Super Bright Yellow source color devices are made LOW POWER CONSUMPTION. with DH InGaAlP on GaAs substrate Light Emitting Diode. WIDE VIEWING ANGLE.

AP2012F3C

Contextual Info: 2.0x1.25mm INFRA-RED EMITTING DIODE AP2012F3C Features Description 2.0mmx1.25mm SMT LED,1.1mm THICKNESS. F3 Made with Gallium Arsenide Infrared Emitting MECHANICALLY AND SPECTRALLY MATCHED TO THE diodes. PHOTOTRANSISTOR. WATER CLEAR LENS. PACKAGE: 2000PCS / REEL.

AP2012P3C

Contextual Info: PHOTOTRANSISTOR AP2012P3C Features Description MECHANICALLY AND SPECTRALLY MATCHED TO Made with NPN silicon phototransistor chips. THE AP2012 SERIES INFRARED EMITTING LED LAMP. WATER CLEAR LENS. PACKAGE : 2000PCS / REEL. RoHS COMPLIANT. Package Dimensions

Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP AP2012ND PURE ORANGE Features Description !2.0mmx1.25mm SMT LED, 1.1mm THICKNESS. The Pure Orange source color devices are !LOW POWER CONSUMPTION. made with Gallium Arsenide Phosphide on !WIDE VIEWING ANGLE. Gallium Phosphide Pure Orange Light Emitting

Contextual Info: INFRA-RED EMITTING DIODE AP2012F3C Features Description ! BOTH F3 Made with Gallium Arsenide Infrared Emitting diodes. WATER CLEAR LENS AND BLUE TRANSPARENT LENS AVAILABLE. ! 2.0mmx1.25mm ! HIGH SMT LED, 1.1mm THICKNESS. POWER OUTPUT. ! PACKAGE : 2000PCS / REEL.

Contextual Info: AP2010C RFIC Technology Corporation 2.4&5GHz Dual Band Power Amplifier www.rfintc.com 2005.05.01 Preliminary AP2010C is a DUAL BAND power amplifier in 2.4GHz and 5GHz band utilizing InGaP/GaAs HBT process. At 2.4GHz Low Band, LB , AP2010C features a ultra low current at 60mA, gain of 25 dB, linear

Contextual Info: MMIC AP201 Product Features • • • • • • • • • Application • • • • • Small size SMD Type Package NO matching circuit needed High efficiency Higher linearity SOT89 Type Package Higher productivity Lower manufacturing cost GaAs MMIC

Contextual Info: AP2010C RFIC Technology Corporation 2.4&5GHz Dual Band Power Amplifier www.rfintc.com 2006.12.01 Update AP2010C is a DUAL BAND power amplifier in 2.4GHz and 5GHz band utilizing InGaP/GaAs HBT process. • 802.11g 2.4GHz : - Current: 60mA for 11g linear power(18dBm)

AP2012SEC

Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP AP2012SEC Features SUPER BRIGHT ORANGE Description 2.0mmx1.25mm SMT LED,1.1mm THICKNESS. LOW POWER CONSUMPTION. The Super Bright Orange device is made with DH InGaAlP on GaAs substrate light emitting diode chip. WIDE VIEWING ANGLE.

Contextual Info: 2.0x1.2mm SMD CHIP LED LAMP AP2012SGD SUPER BRIGHT GREEN Features Description !2.0mmx1.2mm SMT LED, 1.1mm THICKNESS. The Super Bright Green source color devices are !LOW POWER CONSUMPTION. made with Gallium Phosphide Green Light Emitting VIEWING ANGLE. Diode.

Contextual Info: 2.0x1.2mm SMD CHIP LED LAMP AP2012PBC BLUE Features z2.0mmx1.2mm zLOW SMT LED, 1.1mm THICKNESS. POWER CONSUMPTION. zWIDE zIDEAL VIEWING ANGLE. Package Dimensions FOR BACKLIGHT AND INDICATOR. zVARIOUS COLORS AND LENS TYPES AVAILABLE. Description The Blue source color devices are made with InGaN on SiC Light

Contextual Info: 2.0x1.2mm SMD CHIP LED LAMPS Features AP2012SYC SUPER BRIGHT YELLOW z2.0mmx1.2mm zLOW SMT LED, 1.1mm THICKNESS. AP2012SYCK SUPER BRIGHT YELLOW POWER CONSUMPTION. zWIDE VIEWING ANGLE. zIDEAL FOR BACKLIGHT AND INDICATOR. zVARIOUS Package Dimensions COLORS AND LENS TYPES AVAILABLE.

AP2012P3BT

Contextual Info: PHOTOTRANSISTOR AP2012P3BT Features lMECHANICALLY AND SPECTRALLY MATCHED TO THE AP2012 SERIES INFRARED EMITTING LED LAMP. lBLUE Description Made with NPN silicon phototransistor chips. TRANSPARENT LENS. l PACKAGE : 2000PCS / REEL. Package Dimensions Notes:

AP2012P3C

Contextual Info: 2.0x1.25mm PHOTOTRANSISTOR Part Number: AP2012P3C Description Features z 2.0mmx1.25mm SMT LED,1.1mm thickness. Made with NPN silicon phototansistor chips. z Mechanically and spectrally matched to the infrared emitting LED lamp. z Water clear lens. z Package : 2000pcs / reel.

AP2012SF4C

Contextual Info: 2.0x1.25mm INFRARED EMITTING DIODE Part Number: AP2012SF4C Features Description z 2.0mmx1.25mm SMT LED,1.1mm thickness. SF4 Made with Gallium Aluminum Arsenide Infrared Emit- z Mechanically and spectrally matched to the phototransistor. ting diodes. z Package: 2000pcs / reel.

Contextual Info: AP2014/A Evaluation Module Synchronous PWM Controller Device Features Description • • • • • • • • • The AP2014 controller IC is designed to provide a low-cost synchronous Buck regulator for on-board DC/DC converter applications. The AP2014 together

70t03h

Abstract: 70t03h mosfet
Contextual Info: AP2014/A SYNCHRONOUS PWM CONTROLLER General Description Features • • • • • • • • • Synchronous Controller in 8-Pin Package Operating with single 5V or 12V supply voltage Internal 200KHz Oscillator 400KHz for AP2014A Soft-Start Function

Contextual Info: Kingbright SU RFACE M OUNT LED LAM PS AP2012F3C 0805 A P 1608F3C(0603) AP3216F3C (1206) 'V Part No. Em itting C o lo r + Material A,p (nm) L e n s Type Po=(mW/sr) @ 20m A Min. Typ. V iew in g A ng le D im ension 261/2 3.2mm x 1.6mm x 1.1mm (1206) POLAMTY MARK

AP2012SRCPRV

Contextual Info: 2.0x1.2mm SMD CHIP LED LAMP AP2012SRCPRV SUPER BRIGHT RED Features Description !2.0mmx1.2mm SMT LED,1.1mm THICKNESS. The Super Bright Red source color devices are made !LOW POWER CONSUMPTION. with Gallium Aluminum Arsenide Red Light Emitting !WIDE VIEWING ANGLE.

diode 30 YF

Abstract: Diode yf AP2012PBC
Contextual Info: 2.0x1.2mm SMD CHIP LED LAMP AP2012PBC BLUE Features Description !2.0mmx1.2mm SMT LED,1.1mm THICKNESS. The Blue source color devices are made with InGaN on !LOW POWER CONSUMPTION. SiC Light Emitting Diode. !WIDE VIEWING ANGLE. !IDEAL FOR BACKLIGHT AND INDICATOR.

AP2012SRCPRV

Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP AP2012SRCPRV SUPER BRIGHT RED Description Features 2.0mmx1.25mm SMT LED,1.1mm THICKNESS. The Super Bright Red source color devices are made with LOW POWER CONSUMPTION. Gallium Aluminum Arsenide Red Light Emitting Diode. WIDE VIEWING ANGLE.

AP2012P3C

Abstract: 20x12 phototransistor 940nm
Contextual Info: 2.0x1.25mm PHOTOTRANSISTOR Part Number: AP2012P3C Description Features z 2.0mmx1.25mm SMT LED,1.1mm thickness. Made with NPN silicon phototansistor chips. z Mechanically and spectrally matched to the infrared emitting LED lamp. z Water clear lens. z Package : 2000pcs / reel.