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Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: AO8832 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8832 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This	Original	AO8832 AO8832L	PDF

Catalog Datasheet

MFG & Type

Document Tags

PDF

Untitled

Abstract: No abstract text available
Text: AO8832 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8832 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This

Original

AO8832 AO8832L

PDF