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    AO8814L Search Results

    AO8814L Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AO8814L Alpha & Omega Semiconductor Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: Rev 1: August 2004 AO8814, AO8814L Green Product Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8814 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while


    Original     		AO8814, AO8814L AO8814 PDF

    AO8814

    Abstract: No abstract text available
    Text: AO8814 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8814 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected.


    Original     		AO8814 AO8814is AO8814L PDF

    AO8814

    Abstract: AO8814L
    Text: AO8814 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8814 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected.


    Original     		AO8814 AO8814 AO8814is AO8814L PDF