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    Untitled

    Abstract: No abstract text available
    Text: Rev 3: Nov 2004 AO8806, AO8806L Green Product Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8806 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This


    Original     		AO8806, AO8806L AO8806 PDF

    Untitled

    Abstract: No abstract text available
    Text: AO8806 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8806 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM


    Original     		AO8806 AO8806L Rati150 PDF