AO8806 Search Results

AO8806 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
AO8806		Unknown	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor		Original	PDF

AO8806 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
AO8806 Abstract: No abstract text available Text: AO8806 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8806 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM	Original	AO8806 AO8806	PDF
Untitled Abstract: No abstract text available Text: AO8806 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8806 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM	Original	AO8806 AO8806L Rati150	PDF
Untitled Abstract: No abstract text available Text: AO8806 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8806 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM	Original	AO8806 AO8806	PDF
AO8806 Abstract: No abstract text available Text: Dec 2002 AO8806 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8806 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This	Original	AO8806 AO8806	PDF
Untitled Abstract: No abstract text available Text: Rev 3: Nov 2004 AO8806, AO8806L Green Product Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8806 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This	Original	AO8806, AO8806L AO8806	PDF
STM9435 Abstract: AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M stm4532 FDD6685 AP9960M APEC Text: South Sea Semiconductor Cross Reference Guide Competitor SSS Competitor Part Number Part Number STU3055L2 APM2034NU ANPEC STU4030NL APM2512NU ANPEC STU4030NL APM3011NU ANPEC STU3030PL APM3020PU ANPEC APM3023N ANPEC STU3030NL APM4210K ANPEC SDM4410 APM4220K ANPEC	Original	STU3055L2 APM2034NU STU4030NL APM2512NU APM3011NU STU3030PL APM3020PU APM3023N STU3030NL STM9435 AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M stm4532 FDD6685 AP9960M APEC	PDF
semiconductor cross reference Abstract: AP40N03H STM8405 AP4411 AP60N03H ap4503M Fairchild Cross Reference ao3411 AO3401 cross reference anpec Cross Reference Text: South Sea Semiconductor Cross Reference Guide Competitor SSS Competitor Part Number Part Number STU3055L2 APM2034NU ANPEC STU4030NL APM2512NU ANPEC STU4030NL APM3011NU ANPEC STU3030PL APM3020PU ANPEC APM3023N ANPEC STU3030NL APM4210K ANPEC SDM4410 APM4220K ANPEC	Original	STU3055L2 APM2034NU STU4030NL APM2512NU APM3011NU STU3030PL APM3020PU APM3023N STU3030NL semiconductor cross reference AP40N03H STM8405 AP4411 AP60N03H ap4503M Fairchild Cross Reference ao3411 AO3401 cross reference anpec Cross Reference	PDF