SKiiP 33 NEC 125 To
Abstract: skiip 33 ups 063 skiip 32 ups 063 semikron skiip 33 nec skiip 85 UPS 06 skiip 33 nec 125 t semikron skiip 33 NEC 125 semikron skiip 32 ups 063 skiip 32 ups 06 SKIIP 33 UPS 06
Text: MiniSKiiP Technology Pressure contact of all power and auxiliary connections instead of soldered joints. Integration of latest chip technology: • • • • • • Low switching loss 1200 V, homogeneous NPT IGBTs with antiparallel CAL-diodes Low forward loss 600 V PT-IGBTs with antiparallel
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Untitled
Abstract: No abstract text available
Text: GaAs Schottky Diode Antiparallel Pair Technical Data HSCH-9551 Features • Low Junction Capacitance— typically 40 fF • Low Series Resistance— typically 3 Ω • Large Bond Pads Suitable for Wire-bond or Flip-chip Assembly • Polyimide Scratch Protection
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PDF
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HSCH-9551
HSCH-9551
HSCH-9251
5968-4222E
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HSCH-9551
Abstract: GaAs Schottky
Text: GaAs Schottky Diode Antiparallel Pair Technical Data HSCH-9551 Features • Low Junction Capacitance— typically 40 f F • Low Series Resistance— typically 3 Ω • Large Bond Pads Suitable for Wire-bond or Flip-chip Assembly • Polyimide Scratch Protection
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PDF
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HSCH-9551
HSCH-9551
HSCH-9251
5968-4222E
GaAs Schottky
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GT100DA120U
Abstract: No abstract text available
Text: GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse
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Original
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PDF
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GT100DA120U
OT-227
E78996
2002/95/EC
18-Jul-08
GT100DA120U
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GB100DA60UP
Abstract: No abstract text available
Text: GB100DA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel diodes with ultrasoft reverse recovery
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Original
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PDF
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GB100DA60UP
OT-227
E78996
2002/95/EC
11-Mar-11
GB100DA60UP
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GB100DA60UP
Abstract: No abstract text available
Text: GB100DA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel diodes with ultrasoft reverse recovery
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Original
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PDF
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GB100DA60UP
OT-227
E78996
2002/95/EC
11-Mar-11
GB100DA60UP
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GT100DA120U
Abstract: No abstract text available
Text: GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse
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Original
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PDF
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GT100DA120U
OT-227
E78996
2002/95/EC
11-Mar-11
GT100DA120U
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GaAs MMIC ESD, Die Attach and Bonding Guidelines
Abstract: HSCH-9551 GaAs Schottky HSCH-9551 Equivalent KY Series HSCH-9251 Die Attach and Bonding Guidelines 9551
Text: Agilent HSCH-9551 GaAs Schottky Diode Antiparallel Pair Data Sheet Features • Low Junction Capacitance – typically 40 fF • Low Series Resistance – typically 3 Ω • Large bond pads suitable for automated wire-bonding or flip-chip assembly • Polyimide scratch protection
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Original
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PDF
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HSCH-9551
HSCH-9551
HSCH-9251
GaAs MMIC ESD, Die Attach and Bonding Guidelines
GaAs Schottky
HSCH-9551 Equivalent
KY Series
Die Attach and Bonding Guidelines
9551
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Untitled
Abstract: No abstract text available
Text: SANGDEST MICROELECTRONICS Technical Data Data Sheet N0416 Rev. - SURF1060 Green Products SURF1060 ULTRAFAST PLASTIC RECTIFIER Applications: • • • • • • • • Antiparallel diode for high frequency switching devices Anti saturation diode Snubber diode
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N0416
SURF1060
SURF1060
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GT100DA120U
Abstract: No abstract text available
Text: GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse
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Original
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PDF
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GT100DA120U
OT-227
E78996
2002/95/EC
11-Mar-11
GT100DA120U
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GT100DA120U
Abstract: No abstract text available
Text: GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse
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Original
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PDF
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GT100DA120U
OT-227
2002/95/EC
18-Jul-08
GT100DA120U
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H9510
Abstract: GB100DA60UP
Text: GB100DA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel didoes with ultrasoft reverse recovery
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Original
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PDF
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GB100DA60UP
OT-227
2002/95/EC
OT-227
18-Jul-08
H9510
GB100DA60UP
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GB100DA60UP
Abstract: No abstract text available
Text: GB100DA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel diodes with ultrasoft reverse recovery
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Original
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PDF
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GB100DA60UP
OT-227
E78996
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
GB100DA60UP
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Untitled
Abstract: No abstract text available
Text: VS-70MT060WHTAPbF www.vishay.com Vishay Semiconductors “Half Bridge” IGBT MTP Warp 2 Speed IGBT , 70 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • HEXFRED antiparallel diodes with ultrasoft reverse recovery
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PDF
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VS-70MT060WHTAPbF
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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GT100DA60U
Abstract: No abstract text available
Text: GT100DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse
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Original
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PDF
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GT100DA60U
OT-227
E78996
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
GT100DA60U
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GT100DA60U
Abstract: No abstract text available
Text: GT100DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse
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Original
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PDF
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GT100DA60U
OT-227
E78996
2002/95/EC
11-Mar-11
GT100DA60U
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E78996 diode
Abstract: GB100DA60UP
Text: GB100DA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel diodes with ultrasoft reverse recovery
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Original
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PDF
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GB100DA60UP
OT-227
E78996
2002/95/EC
18-Jul-08
E78996 diode
GB100DA60UP
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GT100DA120U
Abstract: No abstract text available
Text: GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse
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Original
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PDF
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GT100DA120U
OT-227
E78996
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
GT100DA120U
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GT100DA60U
Abstract: No abstract text available
Text: GT100DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse
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Original
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PDF
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GT100DA60U
OT-227
E78996
2002/95/EC
11-Mar-11
GT100DA60U
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IRF 902
Abstract: GA600GD25S CGC SWITCH IGBT DRIVE 50V 300A IGBT 1000A 150V150V
Text: PD - 50071C GA600GD25S SINGLE SWITCH IGBT DUAL INT-A-PAK StandardTM Speed IGBT Features • Standard speed, optimized for battery powered application • Very low conduction losses • HEXFREDTM antiparallel diodes with ultra-soft recovery • Industry standard package
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50071C
GA600GD25S
Collecto18.
IRF 902
GA600GD25S
CGC SWITCH
IGBT DRIVE 50V 300A
IGBT 1000A
150V150V
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GA600HD25S
Abstract: igbt "internal thermistor" int-a-pak
Text: PD - 94341A GA600HD25S StandardTM Speed IGBT SINGLE SWITCH IGBT DUAL INT-A-Pak Features • Standard speed, optimized for battery powered application • Very low conduction losses • HEXFREDTM antiparallel diodes with ultra-soft recovery • Industry standard package
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4341A
GA600HD25S
GA600HD25S
igbt "internal thermistor" int-a-pak
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Untitled
Abstract: No abstract text available
Text: VS-25MT060WFAPbF www.vishay.com Vishay Semiconductors “Full Bridge” IGBT MTP Warp Speed IGBT , 50 A FEATURES • Gen 4 warp speed IGBT technology • HEXFRED antiparallel diodes with ultrasoft reverse recovery • Very low conduction and switching losses
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PDF
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VS-25MT060WFAPbF
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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VS-GA100TS60SFPBF
Abstract: No abstract text available
Text: VS-GA100TS60SFPbF www.vishay.com Vishay Semiconductors “Half-Bridge” IGBT INT-A-PAK, Standard Speed IGBT , 100 A FEATURES • Standard speed PT IGBT technology • Optimized for hard switching speed • FRED Pt antiparallel diodes with fast recovery
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PDF
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VS-GA100TS60SFPbF
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
VS-GA100TS60SFPBF
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GT100DA60U
Abstract: No abstract text available
Text: GT100DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse
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Original
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PDF
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GT100DA60U
OT-227
E78996
2002/95/EC
18-Jul-08
GT100DA60U
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