AN811
Abstract: 1206-8 chipfet layout 1206 pads layout 1206 8 ChipFET Resistor dimensions 1206 to mm AN812
Text: AN811 Vishay Siliconix Single-Channel 1206-8 ChipFETr Power MOSFET Recommended Pad Pattern and Thermal Performance INTRODUCTION New Vishay Siliconix ChipFETs in the leadless 1206-8 package feature the same outline as popular 1206-8 resistors and capacitors but provide all the performance of true power
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AN811
AN812
12-Dec-03
AN811
1206-8 chipfet layout
1206 pads layout
1206 8 ChipFET
Resistor dimensions 1206 to mm
AN812
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AN811
Abstract: No abstract text available
Text: AN811 Vishay Siliconix Single-Channel 1206-8 ChipFETt Power MOSFET Recommended Pad Pattern and Thermal Performance Michael Speed INTRODUCTION The legs of the device are very short, again helping to reduce the thermal path to the external heatsink/pcb and allowing a
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AN811
28-Mar-00
AN811
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dali bridge
Abstract: PIC16F628 dali pic AN AN811 dali source code EN60929 dali power supply circuit diagram Digital addressable lighting interface DALI RS232-DALI rs-232/dali
Text: AN811 The RS-232/DALI Bridge Interface FIGURE 2: Author: INTRODUCTION The Digitally Addressable Lighting Interface DALI has emerged as a standard in Europe to address growing power issues. DALI is known as Annex E of the European electronic ballast standard EN60929 and specifically relates to digitally controlled dimmable ballasts.
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AN811
RS-232/DALI
EN60929
RS-232
PIC16F628
D-81739
DS00811A-page
dali bridge
dali pic AN
AN811
dali source code
dali power supply circuit diagram
Digital addressable lighting interface DALI
RS232-DALI
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1206-8 chipfet
Abstract: Vishay DaTE CODE 1206-8 si5903dc si5903dc-t1-e3
Text: Si5903DC Vishay Siliconix Dual P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.155 at VGS = - 4.5 V ± 2.9 - 20 0.180 at VGS = - 3.6 V ± 2.7 0.260 at VGS = - 2.5 V ± 2.2 • Halogen-free According to IEC 61249-2-21 Definition
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Si5903DC
2002/95/EC
Si5903DC-T1-E3
Si5903DC-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
1206-8 chipfet
Vishay DaTE CODE 1206-8
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Vishay DaTE CODE 1206-8
Abstract: AN811 SI5424DC-T1-GE3 1206-8 chipfet layout
Text: Si5424DC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.024 at VGS = 10 V ID (A)a 6 0.030 at VGS = 4.5 V 6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET Qg (Typ.) 11 nC
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Si5424DC
Si5424DC-T1-E3
Si5424DC-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
Vishay DaTE CODE 1206-8
AN811
1206-8 chipfet layout
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marking code g1
Abstract: mil 43
Text: Si5515CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel ID (A)a Qg (Typ.) RDS(on) (Ω) - 20 0.036 at VGS = 4.5 V 4g 0.041 at VGS = 2.5 V 4g g 0.050 at VGS = 1.8 V 4 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V
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Si5515CDC
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
marking code g1
mil 43
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Untitled
Abstract: No abstract text available
Text: Si5920DC Vishay Siliconix Dual N-Channel 1.5 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) (Ω) ID (A) 0.032 at VGS = 4.5 V 4a 0.036 at VGS = 2.5 V 4a 0.045 at VGS = 1.8 V 4a 0.054 at VGS = 1.5 V 4a Qg (Typ.) 7.3 nC • Halogen-free According to IEC 61249-2-21
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Si5920DC
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Design pure sine wave inverter using transformer
Abstract: laptop LCD inverter SCHEMATIC PZT Transducer ultrasonic Sine wave PWM 1000v DC to AC Inverter Circuits laptop CCFL inverter SCHEMATIC inverter PURE SINE WAVE schematic transit time ultrasonic flow meter circuit design marine sonar 12v to 1000v inverters circuit diagrams laptop inverter ccfl
Text: Application Note 81 September 1999 Ultracompact LCD Backlight Inverters A Svelte Beast Cuts High Voltage Down to Size Jim Williams, Linear Technology Corporation Jim Phillips, Gary Vaughn, CTS Wireless Components INTRODUCTION The liquid crystal display LCD has become ubiquitous. It
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200VAC
800VAC.
LT1375
AN81-23
AN81-24
an81f
Design pure sine wave inverter using transformer
laptop LCD inverter SCHEMATIC
PZT Transducer ultrasonic
Sine wave PWM 1000v DC to AC Inverter Circuits
laptop CCFL inverter SCHEMATIC
inverter PURE SINE WAVE schematic
transit time ultrasonic flow meter circuit design
marine sonar
12v to 1000v inverters circuit diagrams
laptop inverter ccfl
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mosfet 23 Tsop-6
Abstract: No abstract text available
Text: Si5406DC Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 RDS(on) (Ω) ID (A) 0.020 at VGS = 4.5 V 9.5 0.025 at VGS = 2.5 V 8.5 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs: 2.5 V Rated
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Si5406DC
Si5406DC-T1-E3
Si5406DC-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
mosfet 23 Tsop-6
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AN811
Abstract: S0915
Text: Si5475DC Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.031 at VGS = - 4.5 V - 7.6 - 12 0.041 at VGS = - 2.5 V - 6.6 0.054 at VGS = - 1.8 V - 5.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs
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Si5475DC
2002/95/EC
Si5475DC-T1-E3
Si5475DC-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
AN811
S0915
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Untitled
Abstract: No abstract text available
Text: Si5515CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel ID (A)a Qg (Typ.) RDS(on) (Ω) - 20 0.036 at VGS = 4.5 V 4g 0.041 at VGS = 2.5 V 4g g 0.050 at VGS = 1.8 V 4 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V
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Si5515CDC
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si5515DC Vishay Siliconix Complementary 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.040 at VGS = 4.5 V 5.9 20 0.045 at VGS = 2.5 V 5.6 N-Channel P-Channel - 20 0.052 at VGS = 1.8 V 5.2 0.086 at VGS = - 4.5 V - 4.1 0.121 at VGS = - 2.5 V
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2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si5933DC Vishay Siliconix Dual P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 3.6 0.160 at VGS = - 2.5 V - 3.0 0.240 at VGS = - 1.8 V - 2.4 Qg (Typ.) 5.1 • Halogen-free According to IEC 61249-2-21
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Si5933DC
2002/95/EC
Si5933DC-T1-E3
Si5933DC-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si5504BDC www.vishay.com Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -30 ID (A) 0.065 at VGS = 10 V 4a 0.100 at VGS = 4.5 V 4a 0.140 at VGS = -10 V -3.7 0.235 at VGS = -4.5 V -2.8 1206-8 8 1.
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Si5504BDC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si5515DC Vishay Siliconix Complementary 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.040 at VGS = 4.5 V 5.9 20 0.045 at VGS = 2.5 V 5.6 N-Channel P-Channel - 20 0.052 at VGS = 1.8 V 5.2 0.086 at VGS = - 4.5 V - 4.1 0.121 at VGS = - 2.5 V
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Si5515DC
2002/95/EC
Si5515DC-T1-E3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si5975DC Vishay Siliconix Dual P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.086 at VGS = - 4.5 V - 4.1 0.127 at VGS = - 2.5 V - 3.4 0.164 at VGS = - 1.8 V - 3.0 • Halogen-free According to IEC 61249-2-21 Definition
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Si5975DC
2002/95/EC
Si5975DC-T1-E3
Si5975DC-T1-GE3
11-Mar-11
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marking code ED
Abstract: No abstract text available
Text: Si5509DC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.052 at VGS = 4.5 V 6.1a 0.084 at VGS = 2.5 V 4.8a 0.090 at VGS = - 4.5 V - 4.8a 0.160 at VGS = - 2.5 V
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Si5509DC
2002/95/EC
Si5509DC-T1-E3
Si5509DC-T1-GE3
11-Mar-11
marking code ED
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54AIS
Abstract: No abstract text available
Text: Si5404BDC Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.028 at VGS = 4.5 V 7.5 0.039 at VGS = 2.5 V 6.3 Qg (Typ.) 6.3 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Si5404BDC
Si5404BDC-T1-E3
Si5404BDC-T1-GE3
11-Mar-11
54AIS
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Untitled
Abstract: No abstract text available
Text: Si5903DC Vishay Siliconix Dual P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.155 at VGS = - 4.5 V ± 2.9 - 20 0.180 at VGS = - 3.6 V ± 2.7 0.260 at VGS = - 2.5 V ± 2.2 • Halogen-free According to IEC 61249-2-21 Definition
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Si5903DC
2002/95/EC
Si5903DC-T1-E3
Si5903DC-T1-GE3
11-Mar-11
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pic16f1823 example codes eusart
Abstract: IEC60929 annex E MRF24WB0MA MRF24WB0MA PIC 18 PIC16F1827 example codes C PIC16F1823 c example eusart MRF24WB0MB PIC18F23K22 IEC-60929 MRF24WB0
Text: LED Lighting Solutions Summer 2010 Adding Intelligence to Lighting Applications LED Lighting Design Guide www.microchip.com/lighting LED Lighting Solutions Table of Contents LED Lighting . 3 LED Applications . 3
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MCP1252
MCP1252DM-BKLT)
MCP1650
MCP1650DM-LED2)
DS01036F
DS01036F*
pic16f1823 example codes eusart
IEC60929 annex E
MRF24WB0MA
MRF24WB0MA PIC 18
PIC16F1827 example codes C
PIC16F1823 c example eusart
MRF24WB0MB
PIC18F23K22
IEC-60929
MRF24WB0
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Untitled
Abstract: No abstract text available
Text: MB91550 Series 32-bit Microcontroller FR Family FR81S MB91F552 Data Sheet Full Production Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Spansion Inc. deems the products to have been in sufficient production volume
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MB91550
32-bit
FR81S
MB91F552
MB91F552
DS705-00015
DS705-00015-1v0-E,
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assembly code DOT LED MATRIX pic
Abstract: IEC60929 annex E IEC-60929 PID control SMPS PIC circuit diagram of 4000 watt smps full bridge lighting up LED with assembly language Microchip AN1074 PIC16F LED matrix IEC60929 dmx512 receiver
Text: LED Lighting Solutions September 2008 Adding Intelligence to Lighting Applications LED Lighting Design Guide www.microchip.com/lighting LED Lighting Solutions Table of Contents LED Lighting . 3
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MCP1252
DS01036E
DS01036E*
assembly code DOT LED MATRIX pic
IEC60929 annex E
IEC-60929
PID control SMPS PIC
circuit diagram of 4000 watt smps full bridge
lighting up LED with assembly language
Microchip AN1074
PIC16F LED matrix
IEC60929
dmx512 receiver
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Untitled
Abstract: No abstract text available
Text: Si5461EDC Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 6.2 0.060 at VGS = - 2.5 V - 5.4 0.082 at VGS = - 1.8 V - 4.6 • Halogen-free According to IEC 61249-2-21 Available • ESD Protectedb 5000 V
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Si5461EDC
Si5461EDC-T1-E3
Si5461EDC-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si5463EDC Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.062 at VGS = - 4.5 V - 5.1 0.068 at VGS = - 3.6 V - 4.9 0.085 at VGS = - 2.5 V - 4.4 0.120 at VGS = - 1.8 V - 3.7 • Halogen-free According to IEC 61249-2-21
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Si5463EDC
Si5463EDC-T1-E3
Si5463EDC-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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