AN1001
Abstract: Si6436DQ Si9936DY an1001 siliconix
Text: AN1001 Siliconix LITE FOOTt The Next Step in SurfaceĆMount Power MOSFETs Wharton McDaniel and David Oldham When Siliconix introduced its LITTLE FOOTr MOSFETs, it was the first time that power MOSFETs had been offered in a true surfaceĆmount package, the
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AN1001
AN1001
Si6436DQ
Si9936DY
an1001 siliconix
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TSSOP-8 footprint
Abstract: AN1001 Si6436DQ Si9936DY SI9936
Text: AN1001 LITTLE FOOTt TSSOP-8 The Next Step in Surface-Mount Power MOSFETs Wharton McDaniel and David Oldham When Siliconix introduced its LITTLE FOOTr MOSFETs, it was the first time that power MOSFETs had been offered in a true surface-mount package, the SOIC.
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AN1001
01-Sep-93
TSSOP-8 footprint
AN1001
Si6436DQ
Si9936DY
SI9936
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AN1001
Abstract: TSSOP-8 footprint Si6436DQ Si9936DY
Text: AN1001 LITTLE FOOTt TSSOP-8 The Next Step in Surface-Mount Power MOSFETs Wharton McDaniel and David Oldham When Siliconix introduced its LITTLE FOOTr MOSFETs, it was the first time that power MOSFETs had been offered in a true surface-mount package, the SOIC.
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AN1001
01-Sep-93
AN1001
TSSOP-8 footprint
Si6436DQ
Si9936DY
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TSSOP-8 footprint
Abstract: MOSFET TSSOP-8 TSSOP8 Package tssop8 thermal performance single power diode package AN1001 Si6436DQ Si9936DY
Text: AN1001 Vishay Siliconix LITTLE FOOTR TSSOP-8 The Next Step in Surface-Mount Power MOSFETs Wharton McDaniel and David Oldham When Vishay Siliconix introduced its LITTLE FOOT MOSFETs, it was the first time that power MOSFETs had been offered in a true surface-mount package, the SOIC. LITTLE
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AN1001
12-Dec-03
TSSOP-8 footprint
MOSFET TSSOP-8
TSSOP8 Package
tssop8 thermal performance
single power diode package
AN1001
Si6436DQ
Si9936DY
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AN1001
Abstract: Si6436DQ Si9936DY si9936 640 1 TSSOP8
Text: AN1001 Vishay Siliconix LITTLE FOOTR TSSOP-8 The Next Step in Surface-Mount Power MOSFETs Wharton McDaniel and David Oldham When Vishay Siliconix introduced its LITTLE FOOT MOSFETs, it was the first time that power MOSFETs had been offered in a true surface-mount package, the SOIC. LITTLE
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AN1001
MS-012
S-00164--Rev.
31-Jan-00
07-Jun-00
AN1001
Si6436DQ
Si9936DY
si9936
640 1 TSSOP8
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phase lock loop application note 1001
Abstract: AN012473-1 Roland e 30 schematic AN1001 varactor diode fm lmx2315 Passive filters datasheet realization of Passive filters datasheet AN-1001 IS-54
Text: National Semiconductor Application Note 1001 July 2001 The high performance of today’s digital phase-lock loop makes it the preferred choice for generation of stable, low noise, tunable local oscillators in wireless communications applications. This paper investigates the design of passive
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thyristor scr oscillator circuit
Abstract: shockley diode DIAC EQUIVALENT circuit diac with triac ac speed control SCHEMATIC circuit scr oscillator shockley diode application DIAC EQUIVALENT scr firing METHODS Thyristor Shockley diac triac control circuit motor
Text: Teccor brand Thyristors Fundamental Characteristics of Thyristors Introduction The Thyristor family of semiconductors consists of several very useful devices. The most widely used of this family are silicon controlled rectifiers SCRs , Triacs, SIDACs, and
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dual output transformer with input 24v
Abstract: equivalent circuit autotransformer electronic transformer 24v 79R79 24v transformer windings MV-GX Series AN1001 equivalent autotransformer MAX1856 MAX774
Text: Maxim > App Notes > Communications Circuits Keywords: Off-The-Shelf Transformer Adapts Controller For SLIC Applications Nov 04, 1996 APPLICATION NOTE 1001 Off-The-Shelf Transformer Adapts Controller For SLIC Applications We recommend the MAX1856 for new SLIC power supply designs.
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MAX1856
MAX774:
com/an1001
AN1001,
APP1001,
Appnote1001,
dual output transformer with input 24v
equivalent circuit autotransformer
electronic transformer 24v
79R79
24v transformer windings
MV-GX Series
AN1001 equivalent
autotransformer
MAX774
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5252 F 1009 "integrated circuit"
Abstract: LMX1601 LMX2336 892063 6301k lmx2315 qpsk modulation experiment discussion PHILIPS RF databook 1980 AN1001 AN-1052
Text: PLL Performance, Simulation, and Design Frequency Dividers 1/N Output Frequency Fout 1/R Kφ Loop Filter Voltage Controlled Oscillator ( VCO ) Crystal Reference Charge Pump/Phase-Frequency Detector ( PFD ) Low Pass Filter Z(s) By Dean Banerjee Copyright 1998 National Semiconductor
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SI6410DQ
Abstract: No abstract text available
Text: Si6410DQ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.014 at VGS = 10 V ± 7.8 0.021 at VGS = 4.5 V ± 6.3 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT D TSSOP-8 8 D 7 S 3 6 S 4 5 D
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Si6410DQ
Si6410DQ-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si6928DQ Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.035 at VGS = 10 V ± 4.0 0.050 at VGS = 4.5 V ± 3.4 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT D1 D2 TSSOP-8 8 D2
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Si6928DQ
Si6928DQ-T1
Si6928DQ-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si6415DQ Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.019 at VGS = - 10 V ± 6.5 0.030 at VGS = - 4.5 V ± 5.2 • Halogen-free • TrenchFET Power MOSFETs Pb-free Available RoHS* COMPLIANT S* TSSOP-8
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Si6415DQ
Si6415DQ-T1
Si6415DQ-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si6928DQ Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.035 at VGS = 10 V ± 4.0 0.050 at VGS = 4.5 V ± 3.4 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT D1 D2 TSSOP-8 D1 1
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Si6928DQ
Si6928DQ-T1
Si6928DQ-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si6473DQ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0125 at VGS = - 4.5 V - 9.5 0.016 at VGS = - 2.5 V - 8.5 0.0215 at VGS = - 1.8 V - 7.3 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT
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Si6473DQ
Si6473DQ-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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MOSFET TSSOP-8 dual n-channel
Abstract: No abstract text available
Text: Si6966EDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET, ESD Protected FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.030 at VGS = 4.5 V ± 5.2 0.040 at VGS = 2.5 V ± 4.5 • Halogen-free • ESD Protected: 4000 V RoHS COMPLIANT D1 D2 TSSOP-8
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Si6966EDQ
Si6966EDG-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
MOSFET TSSOP-8 dual n-channel
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Untitled
Abstract: No abstract text available
Text: Si6993DQ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.031 at VGS = - 10 V - 4.7 0.048 at VGS = - 4.5 V - 3.8 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT APPLICATIONS • Load Switch
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Si6993DQ
Si6993DQ-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si6435ADQ Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.030 at VGS = - 10 V ± 5.5 0.055 at VGS = - 4.5 V ± 4.1 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT S* G TSSOP-8 D 1 8 D S
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Si6435ADQ
Si6435ADQ-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si6963BDQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 3.9 0.080 at VGS = - 2.5 V - 3.0 • Halogen-free RoHS COMPLIANT S2 S1 TSSOP-8 D1 1 S1 2 S1 3 G1 4 Si6963BDQ G2
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Si6963BDQ
Si6963BDQ-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si6966DQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.030 at VGS = 4.5 V 4.5 0.040 at VGS = 2.5 V 3.9 • Halogen-free Option Available • TrenchFET Power MOSFETs: 2.5 V Rated Pb-free Available
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Si6966DQ
Si6966DQ-T1
Si6966DQ-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si6993DQ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.031 at VGS = - 10 V - 4.7 0.048 at VGS = - 4.5 V - 3.8 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT APPLICATIONS • Load Switch
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Si6993DQ
Si6993DQ-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si6968BEDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET Common Drain, ESD Protection FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.022 at VGS = 4.5 V 6.5 0.030 at VGS = 2.5 V 5.5 • Halogen-free Option Available • TrenchFET Power MOSFETs
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Si6968BEDQ
Si6968BEDQ-T1
Si6968BEDQ-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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tssop 38 footprint
Abstract: No abstract text available
Text: Si6969DQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.034 at VGS = - 4.5 V ± 4.6 0.050 at VGS = - 2.5 V ± 3.8 0.075 at VGS = - 1.8 V ± 3.0 • Halogen-free • TrenchFET Power MOSFETs: 1.8 V Rated
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Si6969DQ
Si6969DQ-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
tssop 38 footprint
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Untitled
Abstract: No abstract text available
Text: Si6963BDQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 3.9 0.080 at VGS = - 2.5 V - 3.0 • Halogen-free RoHS COMPLIANT S2 S1 TSSOP-8 D1 1 S1 2 S1 3 G1 4 Si6963BDQ G2
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Si6963BDQ
Si6963BDQ-T1-GE3
70electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: m I 1 SEC UPB581A UPB581B UPB581C UPB581P DIVIDE-BY-2 PRESCALER OUTLINE DIMENSIONS FEATURES Units in mm O UTLIN E A08 • HIGH FREQUENCY OPERATION • • WIDE BAND OPERATION 9.404* MAX “ I*- 8.50<}> MAX — • SINGLE SUPPLY VOLTAGE: Vcc = 5 V ±10% • TWO SEPARATE IDENTICAL OUTPUTS
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UPB581A
UPB581B
UPB581C
UPB581P
UPB581
UPB581P)
UPB581A)
UPB581B)
UPB581C)
divis10
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