AN-940 MOSFET Search Results

mosfet power totem pole CIRCUIT

Abstract: IR 948 AN-940 mosfet HEXFET Power MOSFET P-Channel hexfet power mosfets international rectifier IR P-Channel mosfet IR power mosfet switching power supply P-Channel HEXFET Power MOSFET HEXFET Characteristics HEXFET Power MOSFET
Contextual Info: Application Note AN-940 How P-Channel MOSFETs Can Simplify Your Circuit Table of Contents Page 1. Basic Characteristics of P-Channel HEXFET Power MOSFETs. 1 2. Grounded Loads . 1

mosfet power totem pole CIRCUIT

Abstract: parallel connection of MOSFETs HEXFET Power MOSFET P-Channel hexfet audio amplifier IR power mosfet switching power supply 20V P-Channel Power MOSFET AN-950 AN-940 mosfet hexfet pair HEXFET Characteristics
Contextual Info: AN- 940 v.Int How P-Channel HEXFET Power MOSFETs Can Simplify Your Circuit (HEXFET Power MOSFET is a trademark of International Rectifier’s Power MOSFETs) Topics covered: • Why P-Channel? • Basic characteristics • Grounded loads • How to regulate a voltage or current in a grounded load

mosfet power totem pole CIRCUIT

Abstract: IR power mosfet switching power supply AN-940 mosfet AN-950 HEXFET Power MOSFET P-Channel AN937 AN-948 P-channel HEXFET Power MOSFET parallel connection of MOSFETs hexfet audio amplifier
Contextual Info: Index AN- 940 v.Int How P-Channel HEXFET Power MOSFETs Can Simplify Your Circuit (HEXFET Power MOSFET is a trademark of International Rectifier’s Power MOSFETs) Topics covered: • Why P-Channel? • Basic characteristics • Grounded loads • How to regulate a voltage or current in a grounded load

J239

Contextual Info: Document Number: AFT09H310−03S Rev. 1, 9/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistors N−Channel Enhancement−Mode Lateral MOSFETs These 56 watt asymmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of

transistor MARKING NC KRC

Abstract: MARKING CODE c26 AGR09130E AGR09130EF AGR09130EU JESD22-C101A amplifier copy machine 100B1R5BW MOSFET marking Z4 marking code ACP
Contextual Info: t Copy Only AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple

J377

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09H310-03S Rev. 0, 7/2013 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 56 watt asymmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of

Z921

Abstract: transistor MARKING NC KRC MOSFET 930 06 ng
Contextual Info: t Copy Only AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple

AGR09130E

Abstract: AGR09130EF AGR09130EU JESD22-C101A
Contextual Info: Draft Copy Only Preliminary Data Sheet November 2003 AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple

RM73B2B

Abstract: gl 3201 AGR09130EF AGR09130E AGR09130EU JESD22-C101A
Contextual Info: Draft Copy Only Preliminary Data Sheet April 2004 AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple

WZ150

Contextual Info: Draft Copy Only Preliminary Data Sheet September 2003 AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple

PD85006

Abstract: PD85006-E AN1294 GRM39-X7R103K50C560 PD84002 PD85 EXCELDRC35C 706 SMD ST T112-16 16208
Contextual Info: PD85006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 15 dB gain @ 870 MHz/13.6 V ■ Plastic package

PD85006

Abstract: PD85006-E 16208 AN1294 706 SMD ST diode gp 434 EXCELDRC35C PD84002 PD85 740J
Contextual Info: PD85006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 15 dB gain @ 870 MHz/13.6 V ■ Plastic package

power 12v

Contextual Info: DB-55008L-960 RF POWER amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 860 - 960MHz ■ Supply voltage: 12 ■ Output power: 7W ■ Efficiency: 46% - 55% ■ Load mismatch: 20:1

DB-55008L-960

Abstract: JESD97 PD55008L-E
Contextual Info: DB-55008L-960 RF POWER amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 860 - 960MHz ■ Supply voltage: 12 ■ Output power: 7W ■ Efficiency: 46% - 55% ■ Load mismatch: 20:1

ATC100B470JT500XT

Abstract: ATC600F101JT250XT GSC362-HYB0900 mrf8p MRF8P9210 mrf8p9210n ATC100B240JT500X ATC100B7R5CT500XT ATC100B9R1CT500XT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P9210N Rev. 0, 12/2011 c RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P9210N Rev. 0, 12/2011 c RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFV09P350-04N Rev. 0, 1/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 100 W symmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of

AFV09P350-04NR3

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFV09P350-04N Rev. 0, 1/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 100 W symmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMRF1020-04N Rev. 0, 2/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 100 W symmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications covering the frequency range

102N06

Abstract: DE275X2-102N06A PLUS247 501N2 DE275-501N16A DE475-501N44A H12N50 DE475-102N21A ISOPLUS247 IXFX
Contextual Info: 500KHz-82MHz POWER MOSFETS O SWITCH MODE POWER SUPPLIES & RF GENERATORS January 2003 The IXYS RF Switch Mode MOSFET family is ideal for applications requiring fast switching including laser driver, induction heating, switch mode power supplies and other non-linear industrial applications. An extensive product

PD54003L

Abstract: PD5400
Contextual Info: DB-54003L-930 RF POWER amplifier using 1 x PD54003L N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 860 - 930 MHz ■ Supply voltage: 5V ■ Output power: 1.5W ■ Efficiency: 51% - 55% ■ Load mismatch: 20:1

NV SMD TRANSISTOR

Abstract: AN1294 UHF rfid reader ma706
Contextual Info: PD84006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz ■ Plastic package ■

Contextual Info: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF MOSFET Line MRF9080 MRF9080S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs

transistor 9527

Abstract: T 9527 st 9535 9542 mitsubishi data sheet transistor 9527
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA01L9595M RoHS Compliance , 952-954MHz 1.4W 3.3V, 2 Stage Amp. For RFID READER / WRITER DESCRIPTION The RA01L9595M is a 1.4-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the