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    AN POWER AMPLIFIER 108 MHZ Search Results

    AN POWER AMPLIFIER 108 MHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    AN POWER AMPLIFIER 108 MHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4cx20000d-9015

    Abstract: 88-108 rf amplifier 4cx20000 "RF Power Amplifier" 4cx20000D 4cx20,000d an power 88-108 mhz 9015 transistor SK-360 transistor 9015 c
    Text: Eimac Power Grid Tube - Quick Reference Data Sheet Page 1 of 1 4CX20,000D/9015 The Eimac 4CX20,000D/9015 is a ceramic/metal VHF power tetrode intended for use as a RF amplifier up to 110 MHz. It is particularly recommended for use in the 88-108 MHz FM band. It features an


    Original     		PDF 4CX20 000D/9015 000D/9015 gs\carolyn\Desktop\Objects\4cx20000d-9015 4cx20000d-9015 88-108 rf amplifier 4cx20000 "RF Power Amplifier" 4cx20000D 4cx20,000d an power 88-108 mhz 9015 transistor SK-360 transistor 9015 c

    4cx20000d-9015

    Abstract: 9015 transistor specification sheet 4cx20000D 88-108 rf amplifier 9015 4cx20,000d an power 88-108 mhz 9015 transistor 9015 transistor specification transistor 9015
    Text: The EIMAC 4CX20,000D/9015 is a ceramic/metal VHF power tetrode intended for use as a RF amplifier up to 110 MHz. It is particularly recommended for use in the 88-108 MHz FM band. It features an electromechanical structure which provides high RF operating efficiency and low RF losses. The


    Original     		PDF 4CX20 000D/9015 SK-360 SK-336 000D/ 000D/9015 4cx20000d-9015 9015 transistor specification sheet 4cx20000D 88-108 rf amplifier 9015 4cx20,000d an power 88-108 mhz 9015 transistor 9015 transistor specification transistor 9015

    GRM1882C1H330JA01D

    Abstract: GRM1882C1H101JA01D GRM1882C1H470JA01D RD02MUS1B GRM1882C1H120DZ01D GRM1882C1H301JA01D rd02mus1
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-108-A Date : 3th Jun. 2010 Rev. Date :22th Jun. 2010 Prepared : H.Ukita, K.Osaki Y.Tanaka Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD02MUS1B single-stage amplifier RF performance at f=400 to 470MHz, Vdd=7.2V.


    Original     		PDF AN-UHF-108-A RD02MUS1B 470MHz, 470MHz. RD02MUS1B: 093AF-G" 400MHz 435MHz LLQ1608-F3N6 300pF GRM1882C1H330JA01D GRM1882C1H101JA01D GRM1882C1H470JA01D GRM1882C1H120DZ01D GRM1882C1H301JA01D rd02mus1

    blf578

    Abstract: BN-61-202 NARDA 3020A BLF578 fm band cw 7808 ATC100B391 blf574 amidon BN-61-202 BN61202 ATC100B391JT500X
    Text: AN10800 Using the BLF578 in the 88 MHz to 108 MHz FM band Rev. 01 — 13 October 2009 Application note Document information Info Content Keywords BLF578, performance, high-efficiency tuning set-up, high voltage LDMOS, amplifier implementation, Class-C CW, FM band, pulsed power


    Original     		PDF AN10800 BLF578 BLF578, AN10800 BN-61-202 NARDA 3020A BLF578 fm band cw 7808 ATC100B391 blf574 amidon BN-61-202 BN61202 ATC100B391JT500X

    blf574

    Abstract: Anzac CH132 amidon BN-61-202 ATC100B6R8CT500X NARDA 3020A bn-61-202 FM low power LDMOS NXP transistor semirigid cw 7808 hp778d
    Text: AN10714 Using the BLF574 in the 88 MHz to 108 MHz FM band Rev. 01 — 26 January 2010 Application note Document information Info Content Keywords BLF574, 600 MHz performance, high voltage LDMOS, amplifier implementation, Class-B CW, FM band, pulsed power Abstract


    Original     		PDF AN10714 BLF574 BLF574, AN10714 Anzac CH132 amidon BN-61-202 ATC100B6R8CT500X NARDA 3020A bn-61-202 FM low power LDMOS NXP transistor semirigid cw 7808 hp778d

    Untitled

    Abstract: No abstract text available
    Text: Ultralow Noise BiFET Op Amp AD743 Excellent DC Performance 0.5 mV Max Offset Voltage 250 pA Max Input Bias Current 1000 V/mV Min Open-Loop Gain AC Performance 2.8 V/␮s Slew Rate 4.5 MHz Unity-Gain Bandwidth THD = 0.0003% @ 1 kHz Available in Tape and Reel in Accordance with


    Original     		PDF AD743 16-Lead AD743

    IC OP AMP for Piezoelectric transducers

    Abstract: hydrophone transducer servo accelerometer hydrophone AD743 AD743-Typical ir photodiode amplifier AD743JN AD743JR-16 AD743JR-16-REEL
    Text: Ultralow Noise BiFET Op Amp AD743 Excellent DC Performance 0.5 mV Max Offset Voltage 250 pA Max Input Bias Current 1000 V/mV Min Open-Loop Gain AC Performance 2.8 V/␮s Slew Rate 4.5 MHz Unity-Gain Bandwidth THD = 0.0003% @ 1 kHz Available in Tape and Reel in Accordance with


    Original     		PDF AD743 EIA-481A AD743 IC OP AMP for Piezoelectric transducers hydrophone transducer servo accelerometer hydrophone AD743-Typical ir photodiode amplifier AD743JN AD743JR-16 AD743JR-16-REEL

    Untitled

    Abstract: No abstract text available
    Text: a Ultralow Noise, High Speed, BiFET Op Amp AD745 FEATURES ULTRALOW NOISE PERFORMANCE 2.9 nV/ͱHz at 10 kHz 0.38 ␮V p-p, 0.1 Hz to 10 Hz 6.9 fA/ͱHz Current Noise at 1 kHz EXCELLENT AC PERFORMANCE 12.5 V/␮s Slew Rate 20 MHz Gain Bandwidth Product THD = 0.0002% @ 1 kHz


    Original     		PDF AD745 16-Lead EIA-481A

    EZ 707

    Abstract: No abstract text available
    Text: 108&301&3"5*0/"-".1-*'*&34 1" . * $ 3 0 5 & $ / 0 - 0 : )551888"1&9.*$305&$)$0.  "1&9   FEATURES • HIGH VOLTAGE - 300 VOLTS • HIGH OUTPUT CURRENT – 1.5 AMPS • 70 WATT DISSIPATION CAPABILITY • 175 MHz GAIN BANDWIDTH


    Original     		PDF 100kHz 250Vp-p 300KHz PA96U EZ 707

    EZ 707

    Abstract: No abstract text available
    Text: 108&301&3"5*0/"-".1-*'*&34 PA96 M I C R O T E C H N O L O G Y 551888"1&9.*$305&$)$0.  "1&9   FEATURES • HIGH VOLTAGE - 300 VOLTS • HIGH OUTPUT CURRENT – 1.5 AMPS • 70 WATT DISSIPATION CAPABILITY • 175 MHz GAIN BANDWIDTH


    Original     		PDF 100kHz 250Vp-p 300KHz PA96U EZ 707

    EZ 707

    Abstract: No abstract text available
    Text: 108&301&3"5*0/"-".1-*'*&3 PA96 M I C R O T E C H N O L O G Y 551888"1&9.*$305&$)$0.  "1&9   FEATURES • HIGH VOLTAGE - 300 VOLTS • HIGH OUTPUT CURRENT – 1.5 AMPS • 70 WATT DISSIPATION CAPABILITY • 175 MHz GAIN BANDWIDTH


    Original     		PDF 100kHz 250Vp-p 300KHz PA96U EZ 707

    PA60U

    Abstract: No abstract text available
    Text: * )70-5"(&108&301&3"5*0/"-".1-*'*&34 1" . * $ 3 0 5 & $ ) / 0 - 0 ( : 888"1&9.*$305&$)$0.  "1&9   FEATURES • RoHS COMPLIANT • LOW COST • WIDE BANDWIDTH - 1.1 Mhz • HIGH OUTPUT CURRENT - 1A per amplifier • WIDE COMMON MODE RANGE Includes negative supply


    Original     		PDF 12-pin 20-pin PA60U

    pa60eu

    Abstract: MO-166 MO-166-AB 12-pin stereo amplifier PA60A PA60 PA60U apex 500 watts amplifier audio amplifier 12V input power
    Text: * )70-5"(&108&301&3"5*0/"-".1-*'*&34 PA60 M I C R O T E C H N O L O G Y 888"1&9.*$305&$)$0.  "1&9   FEATURES • RoHS COMPLIANT • LOW COST • WIDE BANDWIDTH - 1.1 Mhz • HIGH OUTPUT CURRENT - 1A per amplifier • WIDE COMMON MODE RANGE Includes negative supply


    Original     		PDF 12-pin 20-pin PA60U pa60eu MO-166 MO-166-AB 12-pin stereo amplifier PA60A PA60 apex 500 watts amplifier audio amplifier 12V input power

    j6a analog devices

    Abstract: j6a msop dbv 402 j6a ANALOG DEVICE MAKING J6A AD8310ARM-REEL7 AD8310 MO-187-AA Package AD8310ARM AD8310ARMZ
    Text: Fast, Voltage-Out DC–440 MHz, 95 dB Logarithmic Amplifier AD8310 FEATURES FUNCTIONAL BLOCK DIAGRAM SUPPLY 5 +INPUT 8 –INPUT VPOS 8mA BAND GAP REFERENCE AND BIASING 2 COMM INPUT-OFFSET COMPENSATION LOOP GENERAL DESCRIPTION The AD8310 is a complete, dc−440 MHz demodulating


    Original     		PDF AD8310 AD8310 dc-440 MO-187-AA AD8310ARM AD8310ARM-REEL7 AD8310ARMZ AD8310ARMZ-REEL71 AD8310-EVAL j6a analog devices j6a msop dbv 402 j6a ANALOG DEVICE MAKING J6A AD8310ARM-REEL7 MO-187-AA Package AD8310ARM

    AD8306

    Abstract: 5962-9864601QEA AD8306ACHIPS AD8306AR AD8306AR-REEL AD8306AR-REEL7 AD8306-EVAL D-16
    Text: a 5 MHz–400 MHz 100 dB High Precision Limiting-Logarithmic Amplifier AD8306 FEATURES Complete, Fully Calibrated Log-Limiting IF Amplifier 100 dB Dynamic Range: –91 dBV to +9 dBV Stable RSSI Scaling Over Temperature and Supplies: 20 mV/dB Slope, –95 dBm Intercept


    Original     		PDF AD8306 C3592a 16-Lead SO-16) AD8306 5962-9864601QEA AD8306ACHIPS AD8306AR AD8306AR-REEL AD8306AR-REEL7 AD8306-EVAL D-16

    inductor vk200

    Abstract: RTL 602 W 300w fm amplifier neosid* 10k VK200 INDUCTOR VK200 inductor of high frequencies neosid "RF MOSFET" 300W 300 ohms balun 300w amplifier
    Text: AN1229 APPLICATION NOTE SD2932 RF MOSFET FOR 300W FM AMPLIFIER Serge Juhel 1. ABSTRACT This application note gives a description of a broadband power amplifier operating over the frequency range 88 - 108 MHz and using the new STMicroelectronics RF MOSFET transistor SD2932.


    Original     		PDF AN1229 SD2932 SD2932. SD2932 inductor vk200 RTL 602 W 300w fm amplifier neosid* 10k VK200 INDUCTOR VK200 inductor of high frequencies neosid "RF MOSFET" 300W 300 ohms balun 300w amplifier

    neosid* 10k

    Abstract: neosid* 5.6k 300w fm amplifier VK200 INDUCTOR inductor vk200 88-108 rf amplifier 300w amplifier balun transformer report balun 50 ohm 100 ohm AN rf 88-108mhz
    Text: AN1229 APPLICATION NOTE SD2932 RF MOSFET FOR 300W FM AMPLIFIER Serge Juhel 1. ABSTRACT This application note gives a description of a broadband power amplifier operating over the frequency range 88 - 108 MHz and using the new STMicroelectronics RF MOSFET transistor SD2932.


    Original     		PDF AN1229 SD2932 SD2932. SD2932 neosid* 10k neosid* 5.6k 300w fm amplifier VK200 INDUCTOR inductor vk200 88-108 rf amplifier 300w amplifier balun transformer report balun 50 ohm 100 ohm AN rf 88-108mhz

    88-108 rf amplifier

    Abstract: 88-108 mhz Power amplifier w RTL 602 an power 88-108 mhz AN1229 neosid RTL 602 W AN-1229 neosid* 10k SD2932
    Text: AN1229 Application note SD2932 RF MOSFET for 300 W FM amplifier Introduction This application note gives a description of a broadband power amplifier operating over the frequency range 88 - 108 MHz using the new STMicroelectronics RF MOSFET transistor SD2932.


    Original     		PDF AN1229 SD2932 SD2932. SD2932 88-108 rf amplifier 88-108 mhz Power amplifier w RTL 602 an power 88-108 mhz AN1229 neosid RTL 602 W AN-1229 neosid* 10k

    Untitled

    Abstract: No abstract text available
    Text: ASF240 5 ~ 1000 MHz MMIC Amplifier Features Description 26.3 dB Gain at 150 MHz 20.5 dBm P1dB at 150 MHz 41 dBm Output IP3 at 150 MHz 3.0 dB NF at 150 MHz MTTF > 100 Years Single Supply The ASF240, a IF gain block amplifier MMIC, has a


    Original     		PDF ASF240 ASF240, 40x40

    TO220-7 package

    Abstract: PA75CD PA75CC apex pa75 to220 3 lead plastic 5.1 channel amp boards and connections cd 4611 m 1305 PA75CX TO220 HEATSINK DATASHEET
    Text: %6"-108&301&3"5*0/"-".1-*'*&34 PA75 M I C R O T E C H N O L O G Y 888"1&9.*$305&$ $0.  "1&9   FEATURES • RoHS COMPLIANT • LOW COST • WIDE BANDWIDTH - 1.1 Mhz • HIGH OUTPUT CURRENT - 2.5A Combined) • WIDE COMMON MODE RANGE Includes negative supply


    Original     		PDF O-220 PA75CD) PA75CD PA75CD PA75U TO220-7 package PA75CC apex pa75 to220 3 lead plastic 5.1 channel amp boards and connections cd 4611 m 1305 PA75CX TO220 HEATSINK DATASHEET

    PHILIPS 4312 amplifier

    Abstract: NCO8703 SOT121 Package BLF246 AN 6752 Philips film capacitors 27 pf METAL FILM RESISTORS PHILIPS 71005 NCO8801 narrow band philips
    Text: APPLICATION NOTE The BLF246 as an H.F.-S.S.B. amplifier NCO8801 Philips Semiconductors The BLF246 as an H.F.-S.S.B. amplifier CONTENTS 1 SUMMARY 2 INTRODUCTION 3 NARROW BAND TEST AT 28 MHz 4 WIDEBAND OPERATION 5 ACKNOWLEDGEMENT 1998 Mar 23 2 Application Note


    Original     		PDF BLF246 NCO8801 SCA57 PHILIPS 4312 amplifier NCO8703 SOT121 Package AN 6752 Philips film capacitors 27 pf METAL FILM RESISTORS PHILIPS 71005 NCO8801 narrow band philips

    Untitled

    Abstract: No abstract text available
    Text: STM32F328x8 ARM -Cortex®-M4 32b MCU+FPU, 64KB Flash, 16KB SRAM, 2 ADCs, 3 DAC channels, 3 COMPs, Op-Amp, 1.8 V Datasheet −production data Features • Core: ARM®-32-bit-Cortex®-M4 CPU with FPU 72 MHz max , single-cycle multiplication and HW division, and DSP instruction


    Original     		PDF STM32F328x8 -32-bit-Cortex ID026351

    PA75CC

    Abstract: PA75CX cd 4611 PA75CD TO220-7 package
    Text: %6"-108&301&3"5*0/"-".1-*'*&34 1" . * $ 3 0 5 & $ / 0 - 0 : 888"1&9.*$305&$)$0.  "1&9   FEATURES • RoHS COMPLIANT • LOW COST • WIDE BANDWIDTH - 1.1 Mhz • HIGH OUTPUT CURRENT - 2.5A (Combined) • WIDE COMMON MODE RANGE Includes negative supply


    Original     		PDF O-220 PA75CD) PA75CX) PA75CD PA75CD PA75U PA75CC PA75CX cd 4611 TO220-7 package

    Untitled

    Abstract: No abstract text available
    Text: DMTDM, R1E L E M IE u r m LT1215 /12 16 i TECH N O LO G Y 23MHz, Single Supply Dual a n d Q u a d Precision O p Amps 5 0 V / [a s , January 1993 D€SCRIPTION F€ßTUR€S 50V/jiS Typ Slew Rate 23 MHz Typ Gain-Bandwidth Product Fast Settling to 0.01% 250ns Typ


    OCR Scan     		PDF LT1215 23MHz, 250ns 480ns 450mV 120nA 600nA 000V/mV LT1215/LT1216