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    AN 366 FAIRCHILD SEMICONDUCTOR Search Results

    AN 366 FAIRCHILD SEMICONDUCTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    AN 366 FAIRCHILD SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237

    POWER MOSFET CIRCUIT

    Abstract: FDP030N06
    Text: FDP030N06 N-Channel PowerTrench MOSFET 60 V, 193 A, 3.2 mΩ Features Description • RDS on = 2.6 mΩ ( Typ.)@ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining


    Original     		PDF FDP030N06 FDP030N06 POWER MOSFET CIRCUIT

    Untitled

    Abstract: No abstract text available
    Text: FDI030N06 N-Channel PowerTrench MOSFET 60 V, 193 A, 3.2 mΩ Features Description • RDS on = 2.6 mΩ ( Typ.)@ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining


    Original     		PDF FDI030N06 FDI030N06

    FDB029N06

    Abstract: 60V dual N-Channel trench mosfet
    Text: FDB029N06 N-Channel PowerTrench MOSFET 60V, 193A, 3.1mΩ Features Description • RDS on = 2.4mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet


    Original     		PDF FDB029N06 FDB029N06 60V dual N-Channel trench mosfet

    Untitled

    Abstract: No abstract text available
    Text: FDP030N06 N-Channel PowerTrench MOSFET 60V, 193A, 3.2mΩ Features Description • RDS on = 2.6mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet


    Original     		PDF FDP030N06 FDP030N06 O-220

    Untitled

    Abstract: No abstract text available
    Text: FDI030N06 N-Channel PowerTrench MOSFET 60V, 193A, 3.2mΩ Features Description • RDS on = 2.6mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet


    Original     		PDF FDI030N06 FDI030N06

    Untitled

    Abstract: No abstract text available
    Text: FCH043N60 N-Channel SuperFET II MOSFET 600 V, 75 A, 43 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance


    Original     		PDF FCH043N60

    Untitled

    Abstract: No abstract text available
    Text: FDI030N06 N-Channel PowerTrench MOSFET 60 V, 193 A, 3.2 mΩ Features Description • RDS on = 2.6 mΩ (Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining


    Original     		PDF FDI030N06

    Untitled

    Abstract: No abstract text available
    Text: FDP030N06 N-Channel PowerTrench MOSFET 60 V, 193 A, 3.2 mΩ Features Description • RDS on = 2.6 mΩ (Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining


    Original     		PDF FDP030N06

    Untitled

    Abstract: No abstract text available
    Text: FDB029N06 N-Channel PowerTrench MOSFET 60 V, 193 A, 3.1 mΩ Features Description • RDS on = 2.4 mΩ ( Typ.)@ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining


    Original     		PDF FDB029N06 FDB029N06

    Untitled

    Abstract: No abstract text available
    Text: FDB029N06 N-Channel PowerTrench MOSFET 60 V, 193 A, 3.1 mΩ Features Description • RDS on = 2.4 mΩ (Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining


    Original     		PDF FDB029N06

    FDI030N06

    Abstract: a2801
    Text: FDI030N06 tm N-Channel PowerTrench MOSFET 60V, 193A, 3.2mΩ Features Description • RDS on = 2.6mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		PDF FDI030N06 FDI030N06 a2801

    FDP030N06

    Abstract: No abstract text available
    Text: FDP030N06 N-Channel PowerTrench MOSFET 60V, 193A, 3.2mΩ Features Description • RDS on = 2.6mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		PDF FDP030N06 O-220 FDP030N06

    Untitled

    Abstract: No abstract text available
    Text: FDI030N06 N-Channel tm PowerTrench MOSFET 60V, 193A, 3.2mΩ Features Description • RDS on = 2.6mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		PDF FDI030N06

    Untitled

    Abstract: No abstract text available
    Text: FCD620N60ZF N-Channel SuperFET II FRFET® MOSFET 600 V, 7.3 A, 620 mΩ Features Description o SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance


    Original     		PDF FCD620N60ZF

    Untitled

    Abstract: No abstract text available
    Text: FAN6757— mWSaver PWM Controller Features Description • Single-Ended Topologies, such as Flyback and Forward Converters • mWSaver® Technology The FAN6757 is a next-generation Green Mode PWM controller with innovative mWSaver® technology, which dramatically reduces standby and no-load power


    Original     		PDF FAN6757â FAN6757 com/dwg/M0/M08A FAN6757

    FQPF*7N65C APPLICATIONS

    Abstract: No abstract text available
    Text: FAN6757— mWSaver PWM Controller Features Description • Single-Ended Topologies, such as Flyback and Forward Converters • mWSaver™ Technology The FAN6757 is a next-generation Green Mode PWM controller with innovative mWSaver™ technology, which


    Original     		PDF FAN6757â FAN6757 FAN6757 FQPF*7N65C APPLICATIONS

    Untitled

    Abstract: No abstract text available
    Text: FAN6756A— mWSaver PWM Controller Features Description • Single-Ended Topologies, such as Flyback and Forward Converters • mWSaver™ Technology The FAN6756A is a next-generation Green Mode PWM controller with innovative mWSaver™ technology, which


    Original     		PDF FAN6756Aâ FAN6756A FAN6756A

    6756M

    Abstract: schematic diagram smps supply FAN6756 FAN6756MLMY ntc 80 0643
    Text: FAN6756— mWSaver PWM Controller Features Description • Single-Ended Topologies, such as Flyback and Forward Converters • mWSaver™ Technology The FAN6756 is a next-generation Green Mode PWM controller with innovative mWSaver™ technology, which


    Original     		PDF FAN6756-- FAN6756 IEC61010-1 FAN6756 6756M schematic diagram smps supply FAN6756MLMY ntc 80 0643

    6749ML

    Abstract: FAN6748 SOIC127P600 FAN6749 FAN6749MLM
    Text: FAN6749 Highly Integrated Ultra Green-Mode PWM Controller Features Description • •    High-Voltage Startup    Two-Level OCP, 56 ms Delay for Super Peak Load The FAN6749 highly integrated PWM controller enhances the performance of flyback converters. To


    Original     		PDF FAN6749 FAN6749 6749ML FAN6748 SOIC127P600 FAN6749MLM

    Untitled

    Abstract: No abstract text available
    Text: FAN6749 Highly Integrated Ultra Green-Mode PWM Controller Features Description • •    High-Voltage Startup    Two-Level OCP, 56 ms Delay for Super Peak Load The FAN6749 highly integrated PWM controller enhances the performance of flyback converters. To


    Original     		PDF FAN6749 FAN6749

    CA6V

    Abstract: transistor SOT23 PJ6 AFM2 capacitor 470uf 25v 10K CA6V MOTOROLA DSP563XX architecture 5075BR subwoofer motherboard CR0805 DSPAUDIOEVMMB1
    Text: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. DSPAUDIOEVM Evaluation Board User’s Manual Order Number: DSPAUDEVMEBUM/D Revision 1, January 2003 This document contains information on a new product under development by Motorola. Motorola reserves the right to change or discontinue this product without notice.


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: FAN6756AHL — mWSaver PWM Controller Features Description • • The FAN6756AHL is a next-generation Green Mode PWM controller with innovative mWSaver™ technology, which dramatically reduces standby and no-load power consumption, enabling compliance with worldwide


    Original     		PDF FAN6756AHL FAN6756AHL

    Untitled

    Abstract: No abstract text available
    Text: FDMC2674 N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366mΩ Features tm General Description „ Max rDS on = 366mΩ at VGS = 10V, ID = 1.0A UltraFET device combines characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge,


    Original     		PDF FDMC2674