AMPLIFIER POWER SCHEMATIC DIAGRAM Search Results

MAAP-015036

Contextual Info: MAAP-015036 Power Amplifier, 15 W 8.5 - 10.5 GHz Rev. V1 Features Functional Schematic •       15 W Power Amplifier 42 dBm Saturated Pulsed Output Power 17 dB Large Signal Gain PSAT >40% Power Added Efficiency Dual Sided Bias Architecture

BC142

Abstract: bc142 transistor transistor BC142
Contextual Info: BC142 AUDIO AMPLIFIER DESCRIPTION The BC142 is a silicon planar epitaxial NPN transistor in a TO-39 metal case specially intented for use as driver in high power audio amplifier. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value

Contextual Info: MAAP-015024 Power Amplifier, 8 W 14.5 - 17.5 GHz Rev. V3 Features •       Functional Schematic 8 W Power Amplifier 20 dB Small Signal Gain 39 dBm Saturated Pulsed Output Power Dual Sided Bias Architecture 100% On-wafer DC & RF Power Tested

2N4427

Abstract: BFR98 transistor 2N4427 2n4427-bfr98
Contextual Info: 2N4427 BFR98 VHF OSCILLATOR POWER AMPLIFIER DESCRIPTION The 2N4427 and BFR98 are silicon planar epitaxial NPN transistor in Jedec TO-39 metal case. They are designed for VHF class A, B, or C amplifier and oscillator applications. TO-39 INTERNAL SCHEMATIC DIAGRAM

Contextual Info: MJB44H11T4 Low voltage NPN power transistor Datasheet - production data Features • Low collector-emitter saturation voltage TAB • Fast switching speed Applications • Power amplifier 3 1 • Switching circuits D2PAK Description Figure 1. Internal schematic diagram

FMA3058

Abstract: FMA3058-000-WP capacitor 100nf 0301C Filtronic
Contextual Info: FMA3058 Pilot Datasheet v2.5 2-20 GHZ BROADBAND MMIC AMPLIFIER FEATURES: • • • • • • • • FUNCTIONAL SCHEMATIC: 15dB Gain Low Noise Amplifier Single Supply Self Biased +5V @ 90mA 12 dBm P1dB Output Power at 20GHz pHEMT Technology Bias Control

FMA3058

Abstract: FMA3058-000-WP fma-3058
Contextual Info: FMA3058 2-20 GHZ BROADBAND MMIC AMPLIFIER FEATURES: • • • • • • • • Pilot Datasheet v2.5 FUNCTIONAL SCHEMATIC: 15dB Gain Low Noise Amplifier Single Supply Self Biased +5V @ 90mA 12 dBm P1dB Output Power at 20GHz pHEMT Technology Bias Control

Contextual Info: FMA3058 2-20 GHZ BROADBAND MMIC AMPLIFIER FEATURES: • • • • • • • • Pilot Datasheet v2.4 FUNCTIONAL SCHEMATIC: 15dB Gain Low Noise Amplifier Single Supply Self Biased +5V @ 90mA 12 dBm P1dB Output Power at 20GHz pHEMT Technology Bias Control

and pin diagram of TIP35C

Abstract: TIP35C transistor data sheet transistor tip35c tip35c equivalent TIP35C equivalents TIP35C-T3P-K TIP35C TIP36C TIP35CL
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TIP35C NPN SILICON TRANSISTOR HIGH POWER TRANSISTORS DESCRIPTION The UTC TIP35C is a NPN Expitaxial-Base transistor, designed for using in general purpose amplifier and switching applications. Complement to TIP36C. INTERNAL SCHEMATIC DIAGRAM

transistor TIP36C

Abstract: TIP35C equivalents TIP36C TIP35C
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TIP36C PNP SILICON TRANSISTOR HIGH POWER TRANSISTORS DESCRIPTION The UTC TIP36C is a PNP Expitaxial-Base transistor, designed for using in general purpose amplifier and switching applications. Complement to TIP35C INTERNAL SCHEMATIC DIAGRAM

schematics for a PA amplifier

Abstract: TQM613025 design of multi section directional coupler TQM613026 qualcomm rft
Contextual Info: TQM613026 Application Note Application Note for TQM613026 Power Amplifier-Duplexer Product TQM613026 TABLE OF CONTENTS • 1.0 Description • 2.0 Product Block Diagram and Operation • 3.0 Recommended Handset Schematic and Layout Considerations • 3.1 DC Block Recommendations

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TIP35C NPN SILICON TRANSISTOR HIGH POWER TRANSISTORS  DESCRIPTION The UTC TIP35C is a NPN Expitaxial-Base transistor, designed for using in general purpose amplifier and switching applications. Complement to TIP36C.  INTERNAL SCHEMATIC DIAGRAM

2N6668

Contextual Info: 2N6668 SILICON PNP POWER DARLINGTON TRANSISTOR • ■ ■ SGS-THOMSON PREFERRED SALESTYPE PNP DARLINGTON INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS: GENERAL PURPOSE SWITCHING ■ GENERAL PURPOSE SWITCHING AND AMPLIFIER ■ 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM

2N3114

Abstract: P008B
Contextual Info: 2N3114 HIGH VOLTAGE AMPLIFIER DESCRIPTION The 2N3114 is a silicon planar epitaxial NPN transistor in Jedec TO-39 metal case. It is primarily intended for high voltage, medium power applications. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol

TIP35C

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TIP35C NPN SILICON TRANSISTOR HIGH POWER TRANSISTORS  DESCRIPTION The UTC TIP35C is a NPN Expitaxial-Base transistor, designed for using in general purpose amplifier and switching applications. Complement to TIP36C.  INTERNAL SCHEMATIC DIAGRAM

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TIP36C PNP SILICON TRANSISTOR HIGH POWER TRANSISTORS  DESCRIPTION The UTC TIP36C is a PNP Expitaxial-Base transistor, designed for using in general purpose amplifier and switching applications. Complement to TIP35C.  INTERNAL SCHEMATIC DIAGRAM

gsm vco

Abstract: bfr93aw schematic gsm 900 amplifier k 3531 transistor
Contextual Info: CGY 98 GSM/PCN Dual Band Power Amplifier 1 Schematic of the CGY 98 PA Application 1.1 Application Board V1.2 Application Note No. 053 Two independent amplifier chains are implemented on the dual band amplifier board V1.2. Each one uses a BFP 420 SIEGET transistor for first-stage amplification, and the

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TIP36C PNP SILICON TRANSISTOR HIGH POWER TRANSISTORS  DESCRIPTION The UTC TIP36C is a PNP Expitaxial-Base transistor, designed for using in general purpose amplifier and switching applications. Complement to TIP35C.  INTERNAL SCHEMATIC DIAGRAM

BFY50

Abstract: BFY51 bfy51 equivalent BFY50-BFY51 BFY50 equivalent DATASHEET BFY51 BFY52 BFY51I bfy50 cb
Contextual Info: BFY50/51 MEDIUM POWER AMPLIFIER DESCRIPTION The BFY50 and BFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are intended for general purpose linear and switching applications. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS

amp_27006.0

Contextual Info: Category: Amplifiers CIRCUIT IDEAS FOR DESIGNERS Schematic no. amp_27006.0 Low Voltage Instrumentation Amplifier Description This circuit presents a low voltage instrumentation amplifier operating on +/-1V power supplies. This circuit is designed to amplify low level difference-mode signals over a common mode voltage range that may be

IH33

Abstract: 1AP 164 gsm 900 amplifier d 317 transistor
Contextual Info: Infineon fechnoiogies CGY 98 GSM/PCN Dual Band Power Amplifier 1 Schematic of the CGY 98 PA Application 1.1 Application Board V1.2 Application Note No. 053 Two independent amplifier chains are implemented on the dual band amplifier board V1.2. Each one uses a BFP 420 SIEGET transistor for first-stage amplification, and the

Contextual Info: High-Reliability CA3000 Slash-Serles Linear ICs CA3020A/. High-Reliability Multipurpose Wide-Band Power Amplifier The CA3020A Slash / Series types are supplied in the 12lead TO-5 style package. Schematic diagram. TABLE A. POST BURN-IN, FINAL ELECTRICAL AND GROUP A SAMPLING TESTS

MA08506D

Contextual Info: MA08506D 8W Power Amplifier Die 9.5 - 10.5 GHz Advanced Information Features •= •= VDD VDD 38% Typical Power Added Efficiency 50 Ω Input/Output Impedance •= Self-Aligned MSAG MESFET Process RF IN RF OUT VGG Functional Schematic Description Maximum Ratings (T

15V 5A Power Supply Schematic

Abstract: 850C TPA02 TPA02A THALER CORPORATION ATPA02
Contextual Info: TPA02/ TPA02A Power Operational Amplifier THALER CORPORATION. Represented by: Rhopoint Components Ltd. www.rhopointcomponents.com FEATURES EQUIVALENT SCHEMATIC • COMMON COLLECTOR OUTPUT STAGE · CLOSE TO RAIL OUTPUT – ±1.2V TO RAIL · HIGH SLEW RATE – 20V/µsec.