AMPLIFIER DFN 2X2 GAIN Search Results

MARKING RFMD

Abstract: CXE2022Z CXE2022SR CXE-2022Z inp hemt low noise amplifier CXE-2022 CXE2022PCK-410 CXE2022SB CXE2022SQ CXE2022TR7
Contextual Info: CXE-2022Z CXE-2022Z 50MHz to 1000MHz MMIC 75 Low Noise Amplifier 50MHz to 1000MHz MMIC 75 LOW NOISE AMPLIFIER Package: 2x2 DFN Product Description Features RFMD’s CXE-2022Z is a 75 high performance low noise pHEMT MMIC amplifier utilizing a self

Contextual Info: CXE-2022Z CXE-2022Z 50MHz to 1000MHz MMIC 75 Low Noise Amplifier 50MHz to 1000MHz MMIC 75 LOW NOISE AMPLIFIER Package: 2x2 DFN Product Description Features RFMD’s CXE-2022Z is a 75 high performance low noise pHEMT MMIC amplifier utilizing a self

CXE2022SR

Abstract: CXE2022PCK-410 CXE2022SB CXE2022SQ CXE2022TR7 CXE2022Z CXE-2022Z amplifier DFN 2x2 MARKING RFMD CXE2022
Contextual Info: CXE-2022Z CXE-2022Z 50MHz to 1000MHz MMIC 75Ω Low Noise Amplifier 50MHz to 1000MHz MMIC 75Ω LOW NOISE AMPLIFIER Package: 2x2 DFN Product Description Features RFMD’s CXE-2022Z is a 75Ω high performance low noise pHEMT MMIC amplifier utilizing a self bias network. The CXE-2022Z is designed to run over a wide 2.7V to 3.3V single supply voltage

CXE-2022

Abstract: MARKING RFMD CXE-2022Z InP transistor HEMT optimum recievers 106-172 106172
Contextual Info: CXE-2022Z CXE-2022Z 50MHz to 1000MHz MMIC 75Ω Low Noise Amplifier 50MHz to 1000MHz MMIC 75Ω LOW NOISE AMPLIFIER Package: 2x2 DFN Product Description Features RFMD’s CXE-2022Z is a 75Ω high performance low noise pHEMT MMIC amplifier utilizing a self bias network. The CXE-2022Z is designed to run over a wide 2.7V to 3.3V single supply voltage

8901mp

Abstract: APE8901 APE8901X amplifier DFN 2x2 AX59 2x2 dfn esop8 amplifier DFN 2x2 gain ESOP-8
Contextual Info: Advanced Power Electronics Corp. APE8901 1A ULTRA LOW DROPOUT LINEAR REGULATOR FEATURES DESCRIPTION Ultra Low Dropout - 0.2V typical at 1A Output Current Low ESR Output Capacitor (Multi-layer Chip Capacitors (MLCC) Applicable 0.8V Reference Voltage Fast Transient Response

Contextual Info: Advanced Power Electronics Corp. APE8901 1A ULTRA LOW DROPOUT LINEAR REGULATOR DESCRIPTION FEATURES Ultra Low Dropout - 0.2V typical at 1A Output Current Low ESR Output Capacitor (Multi-layer Chip Capacitors (MLCC) Applicable 0.8V Reference Voltage Fast Transient Response

Contextual Info: Advanced Power Electronics Corp. APE8901-HF-3 1A Ultra Low Dropout Linear Regulator Description Features Ultra Low Dropout of 0.2V typ. at 1A Output Current Low ESR Output Capacitor (Multi-layer Chip Capacitors (MLCC) Applicable Reference Voltage of 0.8V

APE8901

Abstract: diagram 12v power amplifier 8901mp 2x2 dfn amplifier DFN 2x2 gain
Contextual Info: Advanced Power Electronics Corp. APE8901 1A ULTRA LOW DROPOUT LINEAR REGULATOR DESCRIPTION FEATURES Ultra Low Dropout - 0.2V typical at 1A Output Current Low ESR Output Capacitor (Multi-layer Chip Capacitors (MLCC) Applicable 0.8V Reference Voltage Fast Transient Response

RT9148GJ5

Abstract: RT9148
Contextual Info: RT9148/9 20V, 350mA, Rail-to-Rail Operational Amplifier General Description Features The RT9148/9 consists of a low power, high slew rate, single supply rail-to-rail input and output operational amplifier. The RT9148 contains a single amplifier and RT9149 contains two amplifiers in one package.

Contextual Info: HMC788LP2E v00.0510 Amplifiers - Driver & Gain Block - SMT 8 pHEMT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz Typical Applications Features The HMC788LP2E is ideal for: P1dB Output Power: +20 dBm • Cellular/3G & LTE/WiMAX/4G Output IP3: +30 dBm • LO Driver Applications

GaAs DFN 2x2

Contextual Info: HMC788LP2E v02.0311 Amplifiers - Driver & Gain Block - SMT 8 pHEMT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz Typical Applications Features The HMC788LP2E is ideal for: P1dB Output Power: +20 dBm • Cellular/3G & LTE/WiMAX/4G Output IP3: +30 dBm • LO Driver Applications

HMC788LP2E

Abstract: DFN PACKAGE thermal resistance 0402 resistor 1
Contextual Info: HMC788LP2E v00.0510 AMPLIFIERS - DRIVER & GAIN BLOCK - SMT 8 pHEMT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz Typical Applications Features The HMC788LP2E is ideal for: P1dB Output Power: +20 dBm • Cellular/3G & LTE/WiMAX/4G Output IP3: +30 dBm • LO Driver Applications

Contextual Info: HMC788ALP2E v00.0913 AMPLIFIERS - DRIVER & GAIN BLOCK - SMT pHEMT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz Typical Applications Features The HMC788ALP2E is ideal for: P1dB Output Power: +20 dBm • Cellular/3G & LTE/WiMAX/4G Output IP3: +33 dBm • LO Driver Applications

Contextual Info: HMC788LP2E v03.0913 AMPLIFIERS - DRIVER & GAIN BLOCK - SMT pHEMT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz Typical Applications Features The HMC788LP2E is ideal for: P1dB Output Power: +20 dBm • Cellular/3G & LTE/WiMAX/4G Output IP3: +30 dBm • LO Driver Applications

APE8838

Contextual Info: Advanced Power Electronics Corp. APE8838 DUAL CHANNEL LDO REGULATORS WITH ENABLE FEATURES DESCRIPTION The APE8838 is a high accurately, low noise, high ripple rejection ratio, low dropout, dual CMOS LDO voltage regulators with enable function. The EN function allows the

Contextual Info: Advanced Power Electronics Corp. APE8837 DUAL CHANNEL LDO REGULATORS WITH ENABLE FEATURES DESCRIPTION The APE8837 is a high accurately, low noise, high ripple rejection ratio, low dropout, dual CMOS LDO voltage regulators with enable function. The EN function allows the

Contextual Info: HMC788LP2E v02.0311 Amplifiers - Driver & GAin Block - smT 8 pHEMT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz Typical Applications Features The Hmc788lp2e is ideal for: p1dB output power: +20 dBm • cellular/3G & lTe/WimAX/4G output ip3: +30 dBm • lo Driver Applications

ceramic capacitor footprint dimension

Abstract: APE8837 transistor 2x2 6pin 2x2 dfn TRANSISTOR MARKING CODE 1F 6PIN
Contextual Info: Advanced Power Electronics Corp. APE8837 DUAL CHANNEL LDO REGULATORS WITH ENABLE FEATURES DESCRIPTION The APE8837 is a high accurately, low noise, high ripple rejection ratio, low dropout, dual CMOS LDO voltage regulators with enable function. The EN function allows the

Contextual Info: Advanced Power Electronics Corp. APE8838 DUAL CHANNEL LDO REGULATORS WITH ENABLE FEATURES DESCRIPTION The APE8838 is a high accurately, low noise, high ripple rejection ratio, low dropout, dual CMOS LDO voltage regulators with enable function. The EN function allows the

7805 sot23

Abstract: 7805 to92 Datasheet superheterodyne receiver WCDMA LT5517 7805 5v TO92 7805 to92 FM Modulator 2GHz GSM project circuit LT1715 LT5502
Contextual Info: 10.2006 Wireless & RF Solutions High Performance Analog ICs Cellular and 3G wireless basestations are continually driven to increase their call capacity and provide higher data rates, while maintaining high quality service. Linear Technology’s analog and RF ICs provide superior linearity, signal-to-noise performance, compact form

7805 to92

Abstract: 7805 sot23 7805 to92 Datasheet LTC1569 LTC2602 LT5526 LT6600-5 LTC1569-6 LT1993-2 LT5514
Contextual Info: 10.2006 Wireless & RF Solutions High Performance Analog ICs Cellular and 3G wireless basestations are continually driven to increase their call capacity and provide higher data rates, while maintaining high quality service. Linear Technology’s analog and RF ICs provide superior linearity, signal-to-noise performance, compact form

LT5526

Abstract: LT1993-2 LT5514 LT5522 LT5524 LT5527 TS16949 LT6600-20 47DBM LTC2624
Contextual Info: 12.2005 Wireless & RF Solutions High Performance Analog ICs Cellular and 3G wireless basestations are continually driven to increase their call capacity and provide higher data rates, while maintaining high quality service. Linear Technology’s analog and RF ICs provide superior linearity, signal-to-noise performance, compact form

RT9148

Contextual Info: RT9148/9 20V, 350mA, Rail-to-Rail Operational Amplifier General Description Features The RT9148/9 consists of a low power, high slew rate, single supply rail-to-rail input and output operational amplifier. z z z z z The RT9148/9 has a high slew rate 35V/ s , 350mA peak

amplifier DFN 2x2 gain

Contextual Info: AP1110 2.4~2.5 GHz Power Amplifier 2004.12.21 Preliminary AP1110 is a linear, low current power amplifier in ISM band utilizing InGaP /GaAs HBT process. The AP1110 is well suitable to be used for portable, low current 2.4GHz applications as well as for BT Bluetooth Class1 applications.